1. Product profile
1.1 General description
Very low capacitance quadruple ESD protection diode arrays in very small SOT353 plastic
package designed to protect up to four signal lines from ElectroStatic Discharge (ESD)
damage and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
in SOT353 package
Rev. 01 — 6 September 2004 Objective data sheet
■ESD protection of up to four lines ■Ultra low leakage current: IRM = 5 nA
■Very low diode capacitance ■ESD protection up to 12 kV
■Max. peak pulse power: Ppp = 22 W ■IEC 61000-4-2; level 4 (ESD)
■Low clamping voltage: V(CL)R = <tbd> V ■IEC 61000-4-5; (surge); Ipp = <tbd> A.
■Computers and peripherals ■Communication systems
■Audio and video equipment ■Portable electronics
■Cellular handsets and accessories ■SIM card protection.
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage
PESD3V3V4UG - - 3.3 V
PESD5V0V4UG - - 5.0 V
Cddiode capacitance f = 1 MHz;
VR=0V
PESD3V3V4UG - - 18 pF
PESD5V0V4UG - - 15 pF
number of protected lines - 4 -
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 2 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
2. Pinning information
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
132
45 1
32
4
5
sym050
Table 3: Ordering information
Type number Package
Name Description Version
PESDxV4UG SC-88A plastic surface mounted package; 5 leads SOT353
Table 4: Marking
Type number Marking code[1]
PESD3V3V4UG V1*
PESD5V0V4UG V2*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Ppp peak pulse power 8/20 µs[1] [2]
PESD3V3V4UG - 22 W
PESD5V0V4UG - 22 W
Ipp peak pulse current 8/20 µs[1] [2]
PESD3V3V4UG - <tbd> A
PESD5V0V4UG - <tbd> A
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 3 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
[2] Measured from pin 1, 3, 4 or 5 to 2.
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6: ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge capability IEC 61000-4-2
(contact discharge) [1] [2]
PESD3V3V4UG - 12 kV
PESD5V0V4UG - 12 kV
PESDxV4UG series HBM MIL-Std 883 - 10 kV
Table 7: ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD); see Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
Table 5: Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5. Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
t (µs)
0403010 20
001aaa630
40
80
120
Ipp
(%)
0
e−t
100 % Ipp; 8 µs
50 % Ipp; 20 µs
001aaa631
Ipp
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 to 1 ns
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 4 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[2] Measured from pin 1, 3, 4 or 5 to 2.
Table 8: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse stand-off voltage
PESD3V3V4UG - - 3.3 V
PESD5V0V4UG - - 5.0 V
IRM reverse leakage current see Figure 6;
PESD3V3V4UG VRWM = 3.3 V - 75 300 nA
PESD5V0V4UG VRWM = 5.0 V - 5 25 nA
V(BR) breakdown voltage IR = 1 mA
PESD3V3V4UG 5.32 5.6 5.88 V
PESD5V0V4UG 6.64 6.8 7.14 V
Cddiode capacitance f = 1 MHz; see Figure 5;
PESD3V3V4UG VR = 0 V - 15 18 pF
VR = 5 V - 8 10 pF
PESD5V0V4UG VR = 0 V - 12 15 pF
VR = 5 V - 6 8 pF
V(CL)R clamping voltage [1] [2]
PESD3V3V4UG Ipp = 1 A - - <tbd> V
Ipp = 3 A - - <tbd> V
PESD5V0V4UG Ipp = 1 A - - <tbd> V
Ipp = 2.5 A - - <tbd> V
rdif differential resistance IR = 1 mA
PESD3V3V4UG - - 300 Ω
PESD5V0V4UG - - 200 Ω
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 5 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform;
see Figure 1.
(1) PESD3V3V4UG.
(2) PESD5V0V4UG.
Tamb = 25 °C.
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values. Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
f = 1 MHz; Tamb = 25 °C.
(1) PESD3V3V4UG.
(2) PESD5V0V4UG.
f = 1 MHz; Tamb = 25 °C.
(1) PESD3V3V4UG.
(2) PESD5V0V4UG.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values. Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values.
<tbd>
X (X)
XXXXXX
001aab173
X
X
X
X
X
X
(X)
X
<tbd>
X (X)
XXXXXX
001aab173
X
X
X
X
X
X
(X)
X
<tbd>
X (X)
XXXXXX
001aab173
X
X
X
X
X
X
(X)
X
<tbd>
X (X)
XXXXXX
001aab173
X
X
X
X
X
X
(X)
X
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 6 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
7. Application information
The PESDxV4UG series is designed for the unidirectional protection of 4 lines or the
bidirectional protection of 3 lines from the damage caused by ElectroStatic Discharge
(ESD) and surge pulses. The PESDxV4UG series may be used on lines where the signal
polarities are above or below ground. The PESDxV4UG series provides a surge capability
of 22 W per line for an 8/20 µs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxV4UG as close to the input terminal or connector as possible.
2. The path length between the PESDxV4UG and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
Fig 7. Application diagram.
5
Unidirectional protection of 4 lines Bidirectional protection of 3 lines
n.c.
43
2
1
PESDxV4UG
006aaa018
5
Data- or transmission lines
43
2
1
PESDxV4UG
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 7 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
8. Package outline
Fig 8. Package outline SOT353 (SC-88A).
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wBM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E (2) e1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28SC-88A
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 8 of 11
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
9. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000
PESDxV4UG SOT353 4 mm pitch, 8 mm tape and reel -115
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 9 of 11
10. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Order number Supersedes
PESDXV4UG_SER_1 20040906 Objective data sheet - 9397 750 13598 -
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
9397 750 13598 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet Rev. 01 — 6 September 2004 10 of 11
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 6 September 2004
Document number: 9397 750 13598
Published in The Netherlands
Philips Semiconductors PESDxV4UG series
Very low capacitance quadruple ESD protection diode arrays
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information . . . . . . . . . . . . . . . . . . . . 10
