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®
FN4780.4
IS-1009RH
Radiation Hardened 2.5V Reference
The Star*Power Radiation Hardened IS-100 9RH is a 2.5V
shunt regulator diode d esigned to provide a stable 2.5V
reference over a wide current range.
The device is designed to maintain sta bility over the full
miitary temperature range and over time. The 0.2%
reference tolerance is achieved by on-chip trimming.
An adjustment terminal is provided to allow for the
calibration of system errors. The use of this terminal to
adjust the reference voltage does not effect the temperature
coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to Single Event Latch-up
and have been specifically designed to provide highly
reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523 .
Pinouts IS2-1009RH (TO-206AB CAN)
BOTTOM VIEW
ISYE-1009RH (SMD.5)
BOTTOM VIEW
Features
• Electrically Screened to SMD # 5962-00523
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
- Latch-up Immune . . . . . . . . . . . . . Dielectrically Isolated
• Reverse Breakdown Voltage (VZ) . . . . . . . . . . . . . . . 2.5V
• Change in VZ vs. Current (400µA to 10mA). . . . . . . . 6mV
• Change in VZ vs. Temp (-55°C to 125°C) . . . . . . . . 15mV
• Max Reverse Breakdown Current . . . . . . . . . . . . . . 20mA
• Device is tested with 10µF shunt capacitance conn ected
from V+ to V-, which provides optimum stability
• Interchangeable with 1009 and 13 6 Industry Types
Applications
• Power Supply Monitoring
• Reference for 5V Systems
• A/D and D/A Reference
2
13V-
V+
ADJ
1
2
3
ADJ
V-
V+
Ordering Information
ORDERING
NUMBER INTERNAL
MKT. NUMBER PART
MARKING
TEMP.
RANGE
(°C)
5962F0052301VXC IS2-1009RH-Q F00523V -55 to 125
5962F0052301QXC IS2-1009RH-8 F00523 01QXC Q -55 to 125
5962F0052301VYC ISYE-1009RH-Q Q 5962F00
52301VYC
-55 to 125
5962F0052301QYC ISYE-1009RH-8 Q 5962F00
52301QYC
-55 to 125
IS2-1009RH/Proto IS2-1009RH/
Proto
IS2-1009RH/
Proto
-55 to 125
ISYE-1009RH/Proto ISYE-1009RH/
Proto
ISLYE-
1009RH/Proto
-55 to 125
Data Sheet January 27, 2006
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2000, 2006. Star*Power™ is a trademark of Intersil Corporation. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4780.4
January 27, 2006
Die Characteristics
DIE DIMENSIONS
1270µm x 1778µm (50 mils x 70 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4) over Silox (SiO2)
Nitride Thickness: 4.0kÅ ±1.0kÅ
Silox Thickness: 12.0kÅ ±4.0kÅ
Top Metallization
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate
EBHF, Dielectric Isolation
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 105 A/cm2
Transistor Count
26
Metallization Mask Layout IS-1009RH
ADJ
V-
V+
IS-1009RH
