FHBCX56-10 - Fenghua Advanced Technology

广东肇庆风华新谷微电子有限公司

广东省肇庆市风华路 18 号风华电子工业城三号楼一楼

TEL:0758-2865088 2865091 FAX:0758-2849749

SOT-89 NPN medium power transistor 三极管

FHBCX56

Fearture 特点:

1base 2collector 3emitter

·High current (max. 1 A)

·Low voltage (max. 80 V).

APPLICATIONS 应用：

·Driver stages of audio and video amplifiers.

DESCRIPTION 描述：

·NPN medium power transistor in a SOT89 plastic

·package. PNP complement: FHBCX51、52、53.

ABSOLUTE MAXIMUM RATINGS 额定值

Characteristic 特性参数 Symbol 符号 Rating 额定值 Unit 单位

Collector-Emitter Voltage 集电极-发射极电压 V CEO 80 Vdc

Collector-Base Voltage 集电极-基极电压 V CBO 100 Vdc

Emitter-Base Voltage 发射极-基极电压 V EBO 5 Vdc

Collector Current(DC)集电极电流-直流 IC 1 Adc

Peak Collector Current 集电极峰值电流 ICM 1.5 Adc

Peak Base Current 基极电流 IBM 0.2 Adc

Collector Power Dissipation 集电极耗散功率 PC 1.30 W

Junction Temperature 结温 Tj 150

℃

Storage Temperature Range 储存温度 Tstg -55～150 ℃

Note:1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

DEVICE MARKING 打标

hFE(1) FHBCX56=BH (63~250)，FHBCX56-10=BK (63~160)，FHBCX56-16=BL (100～250)

ELECTRICAL CHARACTERISTICS 电特性(TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃)

Characteristic 特性参数 Symbol

符号 Test Condition

测试条件

Min

最小

值

Type 典

型值

Max

最大

值

Unit

单位

VCB=30V,IE=0 - - 100 nA

Collector Cutoff Current

集电极截止电流 ICBO VCB=30V,IE=0, Tj=15

℃ - - 10

μA

Emitter Cutoff Current

发射极截止电流 IEBO VEB=5V,IC=0 - - 100 nA

VCE=2V,IC=5mA 63 - -

VCE=2V,IC=150mA 63 - 250

DC Current Gain 直流电流增益 hFE VCE=2V,IC=500mA 40 - - -

Collector-Emitter Saturation

Voltage 基极-发射极饱和压降 VCE(sat) I

C=500mA,IB=50mA - - 0.5 V

Base-Emitter Voltage

集电极-发射极电压 VBE IC = 500mA; VCE =2 V - - 1 V

Transition Frequency 特征频率 fT IC = 10 mA; VCE = 5 V;

f = 100 MHz - 130 - MHz