PRELIMINARY FPD10000AF
10W PACKAGED POWER PHEMT
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04
Fax: +1 408 850-5766 Email: sales@filcsi.com
• PERFORMANCE (1.8 GHz)
♦ 40 dBm Output Power (P1dB)
♦ 11 dB Power Gain (G1dB)
♦ -44 dBc WCDMA ACPR at 30 dBm output power
♦ 180 to 300 mA typical quiescent current (IDQ)
♦ 55% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Additional Design Data Available on Website
♦ Usable Gain to 3.8GHz
• DESCRIPTION AND APPLICATIONS
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter Symbol Test Conditions Min Typ Max Units
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Class B Operation
P1dB V
DS = 12V; IDQ = 180 mA
40 dBm
Power Gain at dB Gain Compression G1dB V
DS = 12V; IDQ = 180 mA
VDS = 12V; IDQ = 300 mA
10
11
dB
Maximum Stable Gain: S21/S12
PIN = 0dBm, 50Ω system
MSG VDS = 12 V; IDQ = 180 mA
VDS = 12 V; IDQ = 300 mA
16.5
18.0
dB
Power-Added Efficiency
at 1dB Gain Compression
PAE VDS = 12V; IDQ = 180 mA
IRF (drive-up current) ~ 1.5A
55 %
Adjacent Channel Power Ratio
WCDMA BTS Forward (64 channels)
10.15 dB Pk/Avg 0.001%
ACPR
VDS = 12V; IDQ = 180 mA
Channel power = 30 dBm
-44
dBc
Saturated Drain-Source Current IDSS V
DS = 3.0 V; VGS = 0 V 5.2 A
Gate-Source Leakage Current IGSO V
GS = -3 V 3 mA
Pinch-Off Voltage |VP| VDS = 3.0 V; IDS = 19 mA 1.1 V
Gate-Drain Breakdown Voltage |VBDGD| IGD = 19 mA 30 35 V
Thermal Resistivity (channel-to-case) ΘCC See Note on following page 3.5 °C/W
SEE PACKAGE
OUTLINE FOR
MARKING CODE
PRELIMINARY FPD10000AF
10W PACKAGED POWER PHEMT
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04
Fax: +1 408 850-5766 Email: sales@filcsi.com
• RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage: From 10 to 12V
Quiescent Current: From 180 (Class B) to 300 mA (Class AB) operation
• ABSOLUTE MAXIMUM RATINGS1
Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS -3V < VGS < +0V 16 V
Gate-Source Voltage VGS 0V < VDS < +15V -3 V
Drain-Source Current IDS For VDS > 2V 50% IDSS mA
Gate Current IG Forward / Reverse current +50/-8 mA
RF Input Power2 P
IN Under any acceptable bias state 1.75 W
Channel Operating Temperature TCH Under any acceptable bias state 175 ºC
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below 42 W
Gain Compression Comp. Under any bias conditions 5 dB
Simultaneous Combination of Limits3 2 or more Max. Limits 80 %
1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
• Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
P
DC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 42 - (0.286W/°C) x TPACK
where TPACK = source tab lead temperature above 22
°
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C Source flange temperature: PTOT = 42 - (0.286 x (55 – 22)) = 32.6W
• Note on Thermal Resistivity: The nominal value of 3.5°C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source
flange.
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
PRELIMINARY FPD10000AF
10W PACKAGED POWER PHEMT
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04
Fax: +1 408 850-5766 Email: sales@filcsi.com
• BIASING GUIDELINES
¾ Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended,
requiring a regulated negative voltage supply for depletion-mode devices such as the
FPD10000AF. The Gate bias supply should be capable of sinking / sourcing at least 10mA of
current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage
(typically -0.6 to -1.0V) is applied to the device before the Drain voltage, otherwise large
amounts of Drain-Source current will be drawn, potentially leading to instability and self-
oscillation.
¾ The recommended 180 – 300 mA bias point is nominally a Class B/AB mode. A small amount
of RF gain expansion prior to the onset of compression is normal for this operating point, and
significant current drive-up should be expected. If a Class A operation is desired, users should
check the de-rating limits given in the previous section to ensure reliable operation.
• PACKAGE OUTLINE
(dimensions in millimeters – mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f1ZD
P3F
f = Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
Status: D=Development P = Production
Part Code denotes model (e.g. FPD10000AF)
Part Type: F = FET (pHEMT)
