●
I
T(AV)
25A, I
T(RMS)
39A, I
TSM
500A
●di/dt 100 A/μs
●dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK(PD,PE,KK)25GB
THYRISTOR MODULE
UL;E76102（M）
93.5MAX
26MAX 30MAX 1321
K1
G1
80
110TAB
16.5 23
3
~ + –
2 1
23 3-M5
2-6.5
K2
G2
■Maximum Ratings
Symbol Item PK25GB40 PD25GB40
KK25GB40 PE25GB40
Ratings
PK25GB80 PD25GB80
KK25GB80 PE25GB80
Unit
VRRM ＊
Repetitive Peak Reverse Voltage
400 800 V
480 960 V
400 800 V
VRSM
VDRM
＊
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Symbol Item Conditions Ratings
25
Unit
IT（AV）＊Average On-State Current
IT（RMS）＊R.M.S. On-State Current
Single phase, half wave, 180°conduction, Tc：97℃
Single phase, half wave, 180°conduction, Tc：97℃
ITSM ＊Surge On-State Current
I2t＊I2t
PGM
Peak Gate Power Dissipation
PG（AV）
Average Gate Power Dissipation
IFGM Peak Gate Current
VFGM Peak Gate Voltage (Forward)
1／2cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
A
39 A
450/500 A
1000
10 A2S
W
1
VRGM Peak Gate Voltage (Rsverse)
di／dt
Critical Rate of Rise of On-State Current
I
G
＝100mA，Tj＝25℃，V
D
＝
1／2
V
DRM
，dI
G
/
dt＝0.1A
/
μs
VISO ＊
Isolation Breakdown Voltage (R.M.S.)
Tj ＊
Operating Junction Temperature
Tstg ＊Storage Temperature
Mounting
Torque
Mass
Mounting（M5）
Terminal（M5）
A.C.1minute
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.5-2.5（15-25）
3W
A
10 V
5 V
100 A/μs
2500 V
−40 to＋125 ℃
−40 to＋125
4.7（48）
2.7（28）
170
℃
N･m
（㎏f･B）
g
Unit：
A
Symbol Item Conditions Ratings
4
Unit
IDRM
Repetitive Peak Off-State Current, max.
IRRM ＊
Repetitive Peak Reverse Current, max.
at VDRM, single phase, half wave, Tj＝125℃
at VDRM, single phase, half wave, Tj＝125℃
VTM ＊
Peak On-State Voltage, max.
IGT／VGT
Gate Trigger Current/Voltage, max.
VGD
Non-Trigger Gate, Voltage. min.
tgt Turn On Time, max.
dv／dt
Critical Rate of Rise of Off-State Voltage, min.
IHHolding Current, typ.
On-State Current 75A, Tj＝125℃Inst. measurement
Tj＝25℃，IT＝1A，VD＝6V
mA
4mA
1.50 V
50/3
Tj＝125℃，VD＝1／2VDRM
I
T
＝25A，I
G
＝100mA，Tj＝25℃，V
D
＝
1
／
2
V
DRM
，dI
G
/dt＝0.1A/μs
0.25 mA/V
V
10
Tj＝125℃, VD＝2／3VDRM, Exponential wave.
Tj＝25℃
ILLutching Current, typ.
Rth（j-c）＊Thermal Impedance, max. Tj＝25℃
Junction to case
500
μs
V/μs
50 mA
100 mA
0.80 ℃/W
■Electrical Characteristics
＊mark：Thyristor and Diode part. No mark：Thyristor part
Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
K1
（A2）（K2）
A1K2 G1
K2
G2
123
PK
K1
（A2）（K2）
A1K2
K2
G2
123
PE
K1
（A2）（K2）
A1K2 G1
K2
123
PD
K1
（A2）
（A1） G1
K2
G2
1
2
1
KK
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PK(PD,PE,KK)25GB
;;
２
１０１
５
２
１００
１０
−
１
２
５
５１０１ １０２
２ ５２ １０３２ ５
125℃ 25℃−30℃
PeakForwardGateVoltage（10V）

PeakGate
Power
（10W）
AverageGatePower
（1W）
PeakGateCurrent（3A）
MaximumGateVoltagethatwillnottriggeranyunit（0.25V）
GateCharacteristics
GateCurrent（mA）
GateVoltage（V）
５
２
２
５
５
１０２
０．５ １．０ １．５ ２．０ ２．５ ３．０
１０１
Tj＝125℃
On-StateVoltagemax
On-StateVoltage（V）
On-StateCurrent（A）
: ConductionAngle
360
。
2
５０
４０
３０
１０
６０
０
１０ ２０ ３０ ４０ ５０
２０
D.C.
θ＝ 1 8 0 ゜
θ＝ 1 2 0 ゜
θ＝ 9 0 ゜
θ＝ 6 0 ゜
θ＝ 3 0 ゜
Peroneelement
AverageOn-StateCurrentVsPowerDissipation
（Singlephasehalfwave）
AverageOn-StateCurrent（A）
PowerDissipation（W）
: ConductionAngle
360
。
2
１４０
１２０
１００
８０
６０
４０
２０
０ １０ ２０ ３０ ４０ ５０
D.C.
θ＝ 1 8 0 ゜
θ＝ 9 0 ゜
θ＝ 6 0 ゜
θ＝ 3 0 ゜
Peroneelement
θ＝ 1 2 0 ゜
AverageOn-StateCurrentVsMaximumAllowable
CaseTemperature（Singlephasehalfwave）
AverageOn-StateCurrent（A）
AllowableCaseTemperature（℃）
１２ ５ １０２０ ５０ １００
６００
５００
４００
３００
２００
１００
０
60Hz
50Hz
Ｔｊ= ２５ ℃ s t a r t
PerOneElement
SurgeOn-StateCurrentRating
（Non-Repetitive）
Time（cycles）
SurgeOn-StateCurrent（A）
０．９
０．６
０．３
０ １０ -３ １０ -２
２ ５ １０ -１
２ ５ １００
２ ５
Peroneelement
Junctiontocase
TransientThermalImpedance
Timet（sec）
２ ５１００ １０１
TransientThermalImpedanceθj-c（℃/W）
９０
１００
１１０
１２０
１２５
５０ ２５ ７５
０
２５ ５０ ７５ １００ ０ １２５
２５０
２００
１００
５０
１５０
B2
W3
B6
W1
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
OutputCurrent
W１；B i d i r e c t i o n a l c o n n e c t i o n
OutputCurrent（A） AmbientTemperature（℃）
TotalPowerDissipation（W）
AllowableCaseTemperature（℃）
Id（Ar.m.s.）
Id（Aav.）
Id（Aav.）
Id（Ar.m.s.）
０ ２５ ５０ ７５１００１２５
１００
１１０
１２０
１２５
１００
１１０
１２０
１２５
０ ２５ ５０ ７５１００１２５
２５０
２００
１００
５０
０
１５０
Rth:1.0℃/W Rth:1.0℃/W
Rth:0.8℃/W Rth:0.8℃/W
Rth:0.6℃/W Rth:0.6℃/W
Rth:0.4℃/W Rth:0.4℃/W
Rth:0.1℃/W
Rth:0.1℃/W
B２；T w o P l u s e b r i d g e c o n n e c t i o n
B６；S i x p u l s e b r i d g e c o n n e c t i o n
Ｗ３；T h r e e p h a s e
bidiretionalconnection
AmbientTemperature（℃）AmbientTemperature（℃）
TotalPowerDissipation（W）
AllowableCaseTemperature（℃）
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