4/10/97
GA75TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Features VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 75A
Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to-Case - IGBT — 0.44
RθJC Thermal Resistance, Junction-to-Case - Diode — 0.70 °C/W
RθCS Thermal Resistance, Case-to-Sink - Module 0.1 —
Mounting Torque, Case-to-Heatsink — 4.0 N m
Mounting Torque, Case-to-Terminal 1, 2 & 3— 3.0
Weight of Module 200 — g
Thermal / Mechanical Characteristics
Ultra-FastTM Speed IGBT
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
ICM Pulsed Collector Current150 A
ILM Peak Switching Current150
IFM Peak Diode Forward Current 150
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
PD @ TC = 25°C Maximum Power Dissipation 350 W
PD @ TC = 85°C Maximum Power Dissipation 18 0
TJOperating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL recognition pending
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PRELIMINARY
PD -5050
• Generation 4 IGBT technology
.
http://store.iiic.cc/
GA75TS60U
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 34 0 51 0 VCC = 400V
Qge Gate - Emitter Charge (turn-on) — 48 72 nC IC = 75A
Qgc Gate - Collector Charge (turn-on) — 1 20 170 TJ = 25°C
td(on) Turn-On Delay Time — 1 10 — RG1 = 27Ω, RG2 = 0Ω,
trRise Time — 94 — ns IC = 75A
td(off) Turn-Off Delay Time — 2 50 — VCC = 360V
tfFall Time — 180 — VGE = ±15V
Eon Turn-On Switching Energy — 1.95 — mJ
Eoff (1) Turn-Off Switching Energy — 4.4 —
Ets (1) Total Switching Energy — 6.35 12.6
Cies Input Capacitance — 7880 — VGE = 0V
Coes Output Capacitance — 770 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 98 — ƒ = 1 MHz
trr Diode Reverse Recovery Time — 1 07 — ns IC = 75A
Irr Diode Peak ReverseCurrent — 69 — A R G1 = 27Ω
Qrr Diode Recovery Charge — 3.7 — µC RG2 = 0Ω
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 4400 — A/µs VCC = 360V
During tbdi/dt≈1400A/µs
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 6 00 — — VGE = 0V, I C = 1mA
VCE(on) Collector-to-Emitter Voltage — 1.7 2.2 VGE = 15V, IC = 75A
— 1.76 — V VGE = 15V, IC = 75A, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 500µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 500µA
gfe Forward Transconductance —83— S V
CE = 25V, IC = 75A
ICES Collector-to-Emitter Leaking Current — — 1.0 m A VGE = 0V, VCE = 600V
——10 V
GE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage - Maximum — 1.4 2.0 V IF = 75A, VGE = 0V
— 1.3 — IF = 75A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — 10 0 n A VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
http://store.iiic.cc/
GA75TS60U
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
0.1 1 10 100
0
10
20
30
40
50
60
70
f, Frequency (KHz)
LOAD CURRENT (A)
10
100
1000
1.0 1.5 2.0 2.5
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
Jo
T = 150 C
Jo
1
10
100
1000
5.0 6.0 7.0 8.0 9.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
Jo
T = 150 C
Jo
For both:
Duty cycle: 50%
T = 125° C
T = 90°C
G ate driv e a s specified
sink
J
Power Dissipation = W
270
Power Dissipation = 65 W
25V
VCE = 25V
80µs PULSE WIDTH
http://store.iiic.cc/
GA75TS60U
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Intentionally Left Blank
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A37.5
C
I = A75
C
I = A150
C
37.5A
25 50 75 100 125 150
0
20
40
60
80
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°TJ , Junction Temperature (°C)
http://store.iiic.cc/
GA75TS60U
010 20 30 40 50
5
6
7
8
9
10
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 360V
V = 15V
T = 25 C
I = 75A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 360V
G
GE
CC
I = A
150
C
I = A
75
C
I = A
37.5
C
RG1=27Ω;RG2 = 0 Ω
125°C
1 10 100
0
2000
4000
6000
8000
10000
12000
14000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
0100 200 300 400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 75A
CC
C
RG1 , Gate Resistance ( Ω )
http://store.iiic.cc/
GA75TS60U
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt
IC , Collector-to-Emitter Current ( A )
Instantaneous Forward Current - IF ( A )
QRR - ( nC)
040 80 120 160 200 240
0
5
10
15
20
25
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 125 C
V = 360V
V = 15V
G
J
CC
GE
°
RG1 = 27Ω;RG2 = 0 Ω
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
FM
A
J
J
T = 125°C
T = 25°C
Forward Voltage D rop - V (V)
0
40
80
120
160
200
0 100 200 300 400 500 600 700
CE
GE
SAF E OPER ATING AREA
V , Co lle c tor-to-E mitter V o ltage (V )
A
V = 2 0 V
T = 1 25 °C
V m easured at term inal (P eak V oltage)
GE
J
CE
0
2000
4000
6000
8000
500 1000 1500 2000
f
di /d t - ( A/µs)
I = 150A
I = 75 A
I = 37 A
F
F
F
R
J
J
V = 360V
T = 125°C
T = 25°C
http://store.iiic.cc/
GA75TS60U
Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt
trr - ( ns )
IRRM - ( A )
60
80
100
120
140
160
500 1000 1500 2000
f
A
I = 150A
I = 75 A
I = 37 A
d i /d t - (A /µ s)
F
F
F
R
J
J
V = 360V
T = 125°C
T = 25° C
0
20
40
60
80
100
120
500 1000 1500 2000
f
di /dt - (A/µ s )
A
I = 150A
I = 75 A
I = 37A
F
F
F
R
J
J
V = 3 60V
T = 125°C
T = 25 °C
http://store.iiic.cc/
GA75TS60U
t1
Ic
Vce
t1 t2
90% Ic
10 % Vc e
td(off) tf
Ic 5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫
E off =
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
td(off), tf
∫
Vce ie dt
t2
t1
5% Vc e
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
G ATE VO LTAGE D .U .T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
E on =
∫
Er ec = t4
t3
Vd id d t
t4
t3
DIODE RE COV ERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10 % Ir r Vcc
trr
∫
Q rr = trr
tx
id d t
Fig. 17 - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Eon, td(on), tr
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, I rr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
http://store.iiic.cc/
GA75TS60U
Vg GATE S IGNAL
DE VICE UNDE R TES T
CURRENT D.U.T.
VO L T A G E IN D .U.T .
CURRENT IN D1
t0 t1 t2
Figure 22. Pulsed Collector Current
Test Circuit
RL=480V
4 X IC @25°C
0 - 480V
Figure 21. Macro Waveforms for Figure 17's Test Circuit
http://store.iiic.cc/
GA75TS60U
Case Outline INT-A-PAK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/97
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
See fig. 17
For screws M5x0.8
Pulse width 80µs; single shot.
Dimensions are shown in millimeters (inches)
http://store.iiic.cc/
Appendix:
Circuit configuration for Half bridge IGBT Modules
T----Half Bridge
H---Chopper High Side
L---Chopper Low Side
T*K---Common Anode Half Bridge
GAxxxTxxxx
4(G) 5(E) 6(G) 7(E)
3(C) 1(E C) 2(E)
GAxxxHxxxx
4(G)
3(C)
5(E)
1(E K) 2(A)
2(C)
7(E)
GAxxxLxxxx
3(K)
6(G) 7(E)
1(A C) 2(E)
4(G)
GAxxxTxKxxx
5(E) 6(G)
3(C) 1(E E)
11
XI'AN IR-PERI
Company
http://store.iiic.cc/
