© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 — High-Current High-Side Gate Drive IC
FAN7371 Rev. 1.0.2
November 2009
FAN7371
High-Current High-Side Gate Drive IC
Features
!Floating Channel for Bootstrap Operation to +600V
!4A/4A Sourcing/Sinking Current Driving Capability
!Common-Mode dv/dt Noise Canceling Circuit
!3.3V and 5V Input Logic Compatible
!Output In-phase with Input Signal
!Under- Voltage Lockout for VBS
!25V Shunt Regulator on VDD and VBS
!8-Lead Small Outline Package (SOP)
Applications
!High-Speed Gate Driver
!Sustaine Switch Driver in PDP Application
!Energy-Recovery Circuit Switch Driver in
PDP Application
!High-Power Buck Converter
!Motor Drive Inverter
Description
The FAN7371 is a monolithic high-side gate drive IC,
which can drive high-speed MOSFETs and IGBTs that
operate up to +600V. It has a buffered output stage with
all NMOS transistors designed for high pulse current
driving capability and minimum cross-conduction.
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circum-
stances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8V (typical) for
VBS=15V.
The UVLO circuit prevents malfunction when VBS is
lower than the specified threshold voltage.
The high-current and low-output voltage drop feature
makes this device suitable for sustaine switch driver and
energy recovery switch driver in the Plasma Display
Panel application, motor drive inverter, switching power
supply, and high-power DC-DC converter applications.
Ordering Information
Note:
1. These devices passed wave soldering test by JESD22A-111.
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
8-SOP
Part Number Package Operating
Temperature Range Eco Status Packing Method
FAN7371M(1)
8-SOP -40°C ~ 125°C RoHS Tube
FAN7371MX(1) Tape & Reel
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 2
Typical Application Diagrams
Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application
Figure 2. Step-Down (Buck) DC-DC Converter Application
Energy Recovery Circuit Part Sustain Drive Part
DBOOT1
D2
C2
IN1
To Pannel
DBOOT2
CBOOT1
Q1
D1
D3
D4
L1
IN2
15V
Q2
RBOOT1
CBOOT2
VS DBOOT3
IN3
Q3
RBOOT3
CBOOT3
15V
IN4
Q4
R1
R2
R5
R6
C1 C3
R8
R7
R4
R3
FAN7371
VB
IN
GND
HO
VS
NC
1
2
NC
VDD
7
5
6
8
3
4
FAN7371
VB
IN
GND
HO
VS
NC
1
2
NC
VDD
7
5
6
8
3
4
FAN7371
VB
IN
GND
HO
VS
NC
1
2
NC
VDD
7
5
6
8
3
4
FAN7371
VB
IN
GND
HO
VS
NC
1
2
NC
VDD
7
5
6
8
3
4
FAN7371 Rev.03
DBOOT
C2
PWM
CBOOT
C1
D1
L1
15V
RBOOT
R2
FAN7371
VB
IN
GND
HO
VS
NC
NC
VDD
7
5
6
8
2
4
3
1
R1
VIN
VOUT
FAN7371 Rev.01
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 3
Internal Block Diagram
Figure 3. Functional Block Diagram
Pin Configuration
Figure 4. Pin Configuration (Top View)
Pin Definitions
Pin # Name Description
1V
DD Supply Voltage
2 IN Logic Input for High-Side Gate Driver Output
3 NC No Connection
4 GND Ground
5 NC No Connection
6V
SHigh-Voltage Floating Supply Return
7 HO High-Side Driver Output
8V
BHigh-Side Floating Supply
UVLO
PULSE
GENERATOR
VDD
GND
IN
VB
HO
VS
R
R
SQ
6
7
81
4
2NOISE
CANCELLER
Pins 3 and 5 are no connection.
25V
FAN7371 Rev.04
25V
110K
VDD
Shoot-through current
compensated gate driver
VS
VB
FAN7371
VDD
NC
IN HO
NC
4GND
3
2
1
5
6
7
8
FAN7371 Rev.01
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Notes:
2 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this
supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the
Electrical Characteristics section
3 Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
4 Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.
5 Do not exceed power dissipation (PD) under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Characteristics Min. Max. Unit
VSHigh-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V
VBHigh-Side Floating Supply Voltage(2) -0.3 625.0 V
VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V
VDD Low-Side and Logic Supply Voltage(2) -0.3 VSHUNT V
VIN Logic Input Voltage -0.3 VDD+0.3 V
dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns
PDPower Dissipation(3, 4, 5) 0.625 W
θJA Thermal Resistance 200 °C/W
TJJunction Temperature -55 +150 °C
TSTG Storage Temperature -55 +150 °C
TAOperating Ambient Temperature -40 +125 °C
Symbol Parameter Min. Max. Unit
VBS High-Side Floating Supply Voltage VS+10 VS+20 V
VSHigh-Side Floating Supply Offset Voltage 6-VDD 600 V
VHO High-Side Output Voltage VSVBV
VIN Logic Input Voltage GND VDD V
VDD Supply Voltage 10 20 V
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 5
Electrical Characteristics
VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Note:
6 These parameters guaranteed by design.
Dynamic Electrical Characteristics
VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified.
.
Symbol Characteristics Test Condition Min. Typ. Max. Unit
POWER SUPPLY SECTION
IQDD Quiescent VDD Supply Current VIN=0V or 5V 25 70 μA
IPDD Operating VDD Supply Current fIN=20KHz, No Load 35 100 μA
BOOTSTRAPPED SUPPLY SECTION
VBSUV+
VBS Supply Under-Voltage Positive Going
Threshold Voltage VBS=Sweep 8.2 9.2 10.2 V
VBSUV-
VBS Supply Under-Voltage Negative Going
Threshold Voltage VBS=Sweep 7.5 8.5 9.5 V
VBSHYS
VBS Supply Under-Voltage Lockout
Hysteresis Voltage VBS=Sweep 0.7 V
ILK Offset Supply Leakage Current VB=VS=600V 10 μA
IQBS Quiescent VBS Supply Current VIN=0V or 5V 60 120 μA
IPBS Operating VBS Supply Current CLOAD=1nF, fIN=20KHz, rms
Value 1.0 2.8 mA
SHUNT REGULATOR SECTION
VSHUNT
VDD and VBS Shunt Regulator Clamping
Voltage ISHUNT=5mA 24 25 V
INPUT LOGIC SECTION
VIH Logic “1” Input Voltage 2.5 V
VIL Logic “0” Input Voltage 0.8 V
IIN+ Logic Input High Bias Current VIN=5V 45 70 μA
IIN- Logic Input Low Bias Current VIN=0V 2μA
RIN Input Pull-down Resistance 70 110 KΩ
GATE DRIVER OUTPUT SECTION
VOH High Level Output Voltage (VBIAS - VO)No Load 1.2 V
VOL Low Level Output Voltage No Load 30 mV
IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW 10µs 3.0 4.0 A
IO- Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW 10µs 3.0 4.0 A
VS
Allowable Negative VS pin Voltage for IN
Signal Propagation to HO -9.8 -7.0 V
Symbol Parameter Conditions Min. Typ. Max. Unit
ton Turn-on Propagation Delay Time VS=0V 150 210 ns
toff Turn-off Propagation Delay Time VS=0V 150 210 ns
trTurn-on Rise Time 25 50 ns
tfTurn-off Fall Time 15 40 ns
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 6
Typical Characteristics
Figure 5. Turn-on Propagation Delay
vs. Temperature
Figure 6. Turn-off Propagation Delay
vs. Temperature
Figure 7. Turn-on Rise Time vs. Temperature Figure 8. Turn-off Fall Time vs. Temperature
Figure 9. Operating VDD Supply Current
vs. Temperature
Figure 10. Operating VBS Supply Current
vs. Temperature
-40-20 0 20406080100120
0
50
100
150
200
250
tON [ns]
Temperature [°C]
-40-20 0 20406080100120
0
50
100
150
200
250
tOFF [ns]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120
0
10
20
30
40
50
tR [ns]
Temperature [°C]
-40-20 0 20406080100120
0
10
20
30
40
50
tF [ns]
Temperature [°C]
-40-20 0 20406080100120
0
20
40
60
80
100
IPDD [μA]
Temperature [°C]
-40-20 0 20406080100120
0.0
0.5
1.0
1.5
2.0
IPBS [mA]
Temperature [°C]
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 7
Typical Characteristics (Continued)
Figure 11. VBS UVLO+ vs. Temperature Figure 12. VBS UVLO- vs. Temperature
Figure 13. Logic High Input Voltage vs. Temperature Figure 14. Logic Low Input Voltage vs. Temperature
Figure 15. Input Pull-Down Resistance
vs.Temperature.
Figure 16. High-Level Output Voltage
vs. Temperature
-40 -20 0 20 40 60 80 100 120
8.0
8.5
9.0
9.5
10.0
VBSUV+ [V]
Temperature [°C]
-40-20 0 20406080100120
7.5
8.0
8.5
9.0
9.5
VBSUV- [V]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIH [V]
Temperature [°C]
-40-20 0 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIL [V]
Temperature [°C]
-40-20 0 20406080100120
0
40
80
120
160
200
240
280
RIN [kΩ]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VOH [V]
Temperature [°C]
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 8
Typical Characteristics (Continued)
Figure 17. Output High, Short-Circuit Pulsed Current
vs. Temperature
Figure 18. Output Low, Short-Circuit Pulsed Current
vs. Temperature
Figure 19. Output High, Short-Circuit Pulsed Current
vs. Supply Voltage
Figure 20. Output Low, Short-Circuit Pulsed Current
vs. Supply Voltage
Figure 21. Quiescent VDD Supply Current
vs. Supply Voltage
Figure 22. Quiescent VBS Supply Current
vs. Supply Voltage
-40 -20 0 20 40 60 80 100 120
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
IO+ [A]
Temperature [°C]
-40-20 0 20406080100120
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
IO- [A]
Temperature [°C]
10 12 14 16 18 20
2
3
4
5
6
7
IO+ [A]
VBS [V]
10 12 14 16 18 20
2
3
4
5
6
7
IO- [A]
VBS [V]
10 12 14 16 18 20
0
20
40
60
80
25°C
-40°C
IQDD [μA]
Supply Voltage [V]
125°C
10 12 14 16 18 20
0
20
40
60
80
100
120
25°C
-40°C
IQBS [μA]
Supply Voltage [V]
125°C
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 9
Switching Time Definitions
Timing Diagram
Figure 23. Switching Time Test Circuit and Waveform Definitions
0.1µF
VB15V
HO
10µF
1000pF
IN
OUT
50%
90%
50%
ton
10%
trtoff tf
10%
90%
FAN7371
(A) (B)
10nF
15V
10µF
VDD
VS
GND
IN
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 10
Physical Dimensions
Figure 24. 8-Lead Small Outline Package (SOP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
SEE DETAIL A
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
LAND PATTERN RECOMMENDATION
SEATING PLANE
0.10 C
C
GAGE PLANE
x 45°
DETAIL A
SCALE: 2:1
PIN ONE
INDICATOR
4
8
1
C
MBA0.25
B
5
A
5.60
0.65
1.75
1.27
6.20
5.80
3.81
4.00
3.80
5.00
4.80
(0.33)
1.27
0.51
0.33
0.25
0.10
1.75 MAX
0.25
0.19
0.36
0.50
0.25
R0.10
R0.10
0.90
0.406 (1.04)
OPTION A - BEVEL EDGE
OPTION B - NO BEVEL EDGE
FAN7371 — High-Current High-Side Gate Drive IC
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN7371 Rev. 1.0.2 12