MRFE6S9060NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
•Typical Single- Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — -45.7 dBc in 30 kHz Channel Bandwidth
•Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 21 Watts Avg., Full Frequency Band (920- 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts,
Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Integrated ESD Protection
•225°C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +66 Vdc
Gate-Source Voltage VGS - 0.5, + 12 Vdc
Maximum Operation Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.77
0.88
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9060N
Rev. 1, 10/2007
Freescale Semiconductor
Technical Data
880 MHz, 14 W AVG., 28 V
SINGLE N-CDMA
LATERAL N -CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO- 270-2
PLASTIC
MRFE6S9060NR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22- A115) B (Minimum)
Charge Device Model (per JESD22-C101) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J-STD-020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 10 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th) 1 2.2 3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q) 2 3 4 Vdc
Drain- Source On -Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on) 0.05 0.27 0.4 Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.1 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 33 — pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 109 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single-Carrier
N- CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain Gps 20 21.1 23 dB
Drain Efficiency ηD30.5 33 — %
Adjacent Channel Power Ratio ACPR — -45.7 -44 dBc
Input Return Loss IRL — -18 -9 dB
(continued)
MRFE6S9060NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 21 W Avg., f = 920- 960 MHz, GSM EDGE Signal
Power Gain Gps — 20 — dB
Drain Efficiency ηD— 46 — %
Error Vector Magnitude EVM — 1.5 — %
Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA,
Pout = 60 W, f = 920-960 MHz
Power Gain Gps — 20 — dB
Drain Efficiency ηD— 63 — %
Input Return Loss IRL — -12 — dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB — 67 — W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865- 900 MHz Bandwidth
Video Bandwidth @ 60 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 3 —
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg. GF— 0.27 — dB
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.011 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.088 — dBm/°C
4
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
Figure 1. MRFE6S9060NR1 Test Circuit Schematic
Z9 0.057″ x 0.525″ Microstrip
Z10 0.360″ x 0.270″ Microstrip
Z11 0.063″ x 0.270″ Microstrip
Z12 0.360″ x 0.065″ Microstrip
Z13 0.170″ x 0.065″ Microstrip
Z14 0.880″ x 0.065″ Microstrip
Z15 0.260″ x 0.065″ Microstrip
PCB Taconic RF -35 0.030″, εr = 3.5
Z1 0.215″ x 0.065″ Microstrip
Z2 0.221″ x 0.065″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.460″ x 0.270″ Microstrip
Z5 0.040″ x 0.270″ Microstrip
Z6 0.280″ x 0.270″ x 0.530″Taper
Z7 0.087″ x 0.525″ Microstrip
Z8 0.435″ x 0.525″ Microstrip
R2
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C3
L1
Z1
C2
Z2 Z3
C1
Z4 Z5 Z6 Z7
C4
Z8
C5
Z9
Z10
C14
C13
B1
R3
R1
L2
B2
C9 C8
C6
C10
C11
C15 C16 C17 C18
R4
C19
C7
Z11 Z12 Z13 Z14
C12
Z15
++
+ + +
Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead 2743019447 Fair Rite
B2 Ferrite Bead 274021447 Fair Rite
C1, C8, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2, C4, C13 0.8-8.0 pF Variable Capacitors, Gigatrim 2729152 Johanson
C3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC
C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC
C7, C16, C17 10 µF, 35 V Tantalum Capacitors T491D106K035AT Kemet
C9 100 µF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017- RH Multicomp
C10, C11 12 pF Chip Capacitors ATC100B120JT500XT ATC
C12 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC
C18 0.56 µF Chip Capacitor ATC700A561MT150XT ATC
C19 470 µF, 63 V Electrolytic Capacitor EKME630ELL471MK255 Multicomp
L1, L2 12.5 nH Inductor A04T-5 Coilcraft
R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay
R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay
R4 27 W, 1/4 W Chip Resistor CRCW120627R0FKEA Vishay
MRFE6S9060NR1
5
RF Device Data
Freescale Semiconductor
Figure 2. MRFE6S9060NR1 Test Circuit Component Layout
CUT OUT AREA
C7
B1
R1
C9
R2
R3
C8
L1 C6
C5
C3
C2
C4
C10
C11
L2
C12
C13 C14
C18
R4
C16 C17
C19
B2
C15
C1
TO−270/272
Surface /
Bolt down
VGG
VDD
6
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
TYPICAL CHARACTERISTICS
0
−5
−10
−15
−20
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single- Carrier N- CDMA Broadband Performance
@ Pout = 14 Watts Avg.
960940920900880860
−70
40
20
−40
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
−60
−30
30
21
20
18
16
15
14
17
19
ALT1
840
0
−5
−10
−15
−20
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single- Carrier N- CDMA Broadband Performance
@ Pout = 28 Watts Avg.
960940920900880860
−60
60
40
−30
−40
ηD, DRAIN
EFFICIENCY (%)
ηD
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
−50
−20
50
20
18
16
15
13
17
19
ALT1
840
Figure 5. Two- Tone Power Gain versus
Output Power
100
16
1
IDQ = 675 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
17
10 200
Gps, POWER GAIN (dB)
225 mA
20
18
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−20
1
IDQ = 225 mA
Pout, OUTPUT POWER (WATTS) PEP
100
−30
−40
−50
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
−10
350 mA
200
−60
14
550 mA
350 mA
450 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
675 mA
450 mA
550 mA
MRFE6S9060NR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
−80
−10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
−20
−30
−40
−50
1 200
IMD, INTERMODULATION DISTORTION (dBc)
−60
−70
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
−70
0
TWO−TONE SPACING (MHz)
IM3−U
−20
−30
−40
−50
0.1 80
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 60 W (PEP)
IDQ = 450 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
37
P6dB = 51.31 dBm (135.21 W)
Pin, INPUT POWER (dBm)
58
56
52
48
3230 3634
Actual
Ideal
50
54
27
Pout, OUTPUT POWER (dBm)
P3dB = 50.39 dBm (109.4 W)
P1dB = 49.41 dBm
(87.3 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 10. Single- Carrier N- CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
−80
Pout, OUTPUT POWER (WATTS) AVG.
−20
−50
−60
−70
110
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD
100
ALT1
TC = −30_C
85_C
25_C
25_C
85_C
−30_C
25_C
85_C
IM3−L IM5−U
IM5−L
IM7−U
IM7−L
29 31 33 35
−40
−30
VDD = 28 Vdc, IDQ = 450 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 12 µsec(on)
1% Duty Cycle, f = 880 MHz
−60
−10
1
57
55
53
51
49
28
0
10
20
30
40
50
−30_C
Gps
−30_C
60
−15
5
15
25
35
45
55
65
−25
−35
−45
−55
−65
−75
ACPR
8
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
TYPICAL CHARACTERISTICS
ηD, DRAIN EFFICIENCY (%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
14 0
Pout, OUTPUT POWER (WATTS) CW
80
22
60
21
50
30
20
1 10 100
18
Gps
Gps, POWER GAIN (dB)
10
ηD
200
85_C
20
19
40
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
VDD = 24 V
140
16
22
0 100
17
20
19
18
20
IDQ = 450 mA
f = 880 MHz
28 V32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
17
70
25_C
15
16 VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
TC = −30_C
25_C85_C
−30_C
21
40 60 80 120
MRFE6S9060NR1
9
RF Device Data
Freescale Semiconductor
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 14. Single- Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7 2.2
1.5
0−0.7
−1.5
−2.2
−2.9
−3.6 3.6
f, FREQUENCY (MHz)
Figure 15. Single- Carrier N- CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
10
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
Figure 16. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
850
865
880
2.28 + j0.23
2.20 + j0.47
2.18 + j0.33
0.44 - j0.20
0.44 - j0.07
0.45 + j0.50
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.
895
910 2.00 + j0.68
2.15 + j0.610.48 + j0.18
0.52 + j0.29
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zo = 5 Ω
f = 850 MHz
f = 910 MHz
Zsource
f = 850 MHz
f = 910 MHz
Zload
MRFE6S9060NR1
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
12
RF Device Data
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MRFE6S9060NR1
MRFE6S9060NR1
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RF Device Data
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RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2007 •Initial Release of Data Sheet
1Oct. 2007 •Added Min value to VDS(on), On Characteristics table, p. 2
MRFE6S9060NR1
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RF Device Data
Freescale Semiconductor
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Document Number: MRFE6S9060N
Rev. 1, 10/2007