MICRONAS INTERMETALL HAL556, HAL560, HAL566 Two-Wire Hall Effect Sensor Family MICRONAS Edition April 6, 4, 1999 1996 6251-365-1DS 6251-425-1DS HAL55x, HAL56x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability 5 2. Functional Description 6 6 6 6 7 7 8 9 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview 12 12 14 16 4. 4.1. 4.2. 4.3. Type Descriptions HAL 556 HAL 560 HAL 566 18 18 18 18 19 19 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC 20 6. Data Sheet History 2 MICRONAS HAL55x, HAL56x Two-wire Hall Effect Sensor Family in CMOS technology 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). 1.2. Family Overview The types differ according to the mode of switching and the magnetic switching points. Type Switching Behavior Sensitivity see Page 556 unipolar very high 12 560 unipolar inverted low 14 566 unipolar inverted very high 16 Unipolar Switching Sensors: The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4 V to 24 V in the junction temperature range from -40 C up to 100 C. Unipolar Inverted Switching Sensors: All sensors are available in two SMD-packages (SOT-89A and SOT-89B) and in a leaded version (TO-92UA). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. 1.1. Features: - current output for two-wire applications - switching offset compensation at typically 145 kHz - operates from 4 V to 24 V supply voltage - overvoltage and reverse-voltage protection - magnetic characteristics are robust against mechanical stress effects - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - constant magnetic switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 MICRONAS 3 HAL55x, HAL56x 1.3. Marking Code 1.6. Solderability All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. all packages: according to IEC68-2-58 Type VDD 1 Temperature Range E C HAL556 556E 556C HAL560 560E 560C HAL566 566E 566C 3 NC 2 GND Fig. 1-1: Pin configuration 1.4. Operating Junction Temperature Range E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C The Hall sensors from MICRONAS are specified to the chip temperature (junction temperature TJ). The relationship between ambient temperature (TA) and junction temperature is explained in section 5.4. on page 19. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: E or C Package: SF for SOT-89B SO for SOT-89A UA for TO-92UA Type: 556, 560, or 566 Example: HAL556UA-E Type: 556 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 4 MICRONAS HAL55x, HAL56x 2. Functional Description The HAL 55x, HAL 56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the appropriate state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the switching points. Subsequently, the current consumption switches to the appropriate state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external protection diode is needed for reverse voltages ranging from 0 V to -15 V. HAL55x, HAL 56x VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Comparator Current Source Switch Clock GND 2 Fig. 2-1: HAL55x, HAL 56x block diagram fosc t B BOFF BON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 s t Fig. 2-2: Timing diagram (example: HAL 56x) MICRONAS 5 HAL55x, HAL56x 3. Specifications 4.06 0.1 1.5 0.05 sensitive area x1 0.3 3.1. Outline Dimensions x2 y 3.05 0.1 4.55 0.1 x1 x2 0.125 sensitive area 3.1 0.2 1.7 0.48 0.7 y 2 4 0.2 2.6 0.1 min. 0.25 1 2 3 0.75 0.2 0.55 0.36 14.0 min. top view 1 2 3 0.42 0.4 1.53 0.05 0.4 1.27 1.27 0.4 1.5 (2.54) 3.0 branded side branded side 45 0.8 SPGS7002-7-A/2E 0.06 0.04 SPGS7001-7-A3/2E Fig. 3-3: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm For all package diagrams, a mechanical tolerance of 50 m applies to all dimensions where no tolerance is explicitly given. 4.55 0.1 x1 0.125 x2 sensitive area 1.7 0.3 y 2 4 0.2 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 2.55 0.1 min. 0.25 top view 1 2 3 3.3. Positions of Sensitive Areas 1.15 0.05 0.4 0.4 0.4 SOT-89A 1.5 SOT-89B TO-92UA |x2 - x1| / 2 < 0.2 mm 3.0 y = 0.88 mm 0.2 mm branded side y = 0.85 mm 0.2 mm y = 0.9 mm 0.2 mm 0.06 0.04 SPGS0022-3-A3/2E Fig. 3-2: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm Note: This package will be introduced in 1999. Samples are available. Contact the sales offices for high volume delivery. 6 MICRONAS HAL55x, HAL56x 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -151) 282) V IDDZ Supply Current through Protection Device 1 -502) -2003) 502) 2003) mA mA TS Storage Temperature Range -65 150 C TJ Junction Temperature Range -40 150 C 1) -18 V with a 100 2) as long as T Jmax 3) t < 2 ms series resistor at pin 1 (-16 V with 30 series resistor) as long as TJmax is not exceeded. is not exceeded Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 4 24 V ton Supply Time for pulsed mode 30 - s TA Ambient Temperature -40 851) C Pulsed mode of supply voltage is recommended for operation at high ambient temperatures to keep junction temperature low (see also section 5.4. on page 19). 1) with pulsed mode of supply, t /t 1/6 and t 1 ms on off on MICRONAS 7 HAL55x, HAL56x 3.6. Electrical Characteristics at TJ = -40 C to +100 C , VDD = 4 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit IDDlow Low Current Consumption over Temperature Range 1 2 3.3 5 mA IDDhigh High Current Consumption over Temperature Range 1 12 14.3 17 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms fosc Internal Oscillator Chopper Frequency - 90 145 - kHz TJ = 25 C fosc Internal Oscillator Chopper Frequency over Temperature Range - 75 145 - kHz ten(O) Enable Time of Output after Setting of VDD 1 20 30 s 1) tr Output Rise Time 1 0.4 1.6 s VDD = 12 V, Rs = 30 tf Output Fall Time 1 0.4 1.6 s VDD = 12 V, Rs = 30 RthJSB case SOT-89A SOT-89B Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-4 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) B > BON + 2 mT or B < BOFF - 2 mT for HAL 55x, Conditions B > BOFF + 2 mT or B < BON - 2 mT for HAL 56x 5.0 2.0 2.0 1.0 Fig. 3-4: Recommended pad size SOT-89x Dimensions in mm 8 MICRONAS HAL55x, HAL56x 3.7. Magnetic Characteristics Overview at TJ = -40 C to +100 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit HAL 556 -40 C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 2.8 mT unipolar 25 C 3.4 6 7.4 2 4 5.7 0.5 2 2.7 mT 100 C 3.2 5.7 7.2 1.9 3.8 5.7 0.3 1.9 2.6 mT HAL 560 -40 C 41 46.5 52 45 53.5 59.5 4 7 10 mT unipolar 25 C 41 45.6 52 45 51.7 59.5 3 6.1 9 mT inverted 100 C 41 44.3 52 45 49.5 59.5 2 5.2 8 mT HAL 566 -40 C 2.1 4.1 5.9 3.4 6.1 7.7 0.8 2 2.8 mT unipolar 25 C 2 4 5.7 3.4 5.9 7.2 0.5 1.9 2.7 mT inverted 100 C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT Note: For detailed descriptions of the individual types, see pages 12 and following. MICRONAS 9 HAL55x, HAL56x mA 25 mA 20 HAL 55x, HAL 56x 18 20 IDD HAL 55x, HAL 56x IDDhigh 15 IDD 16 IDDhigh 14 10 12 5 VDD = 4 V 10 IDDlow 0 VDD = 12 V VDD = 24 V 8 -5 -10 TA = -40 C 6 TA = 25 C 4 TA=100 C -15 -20 -15-10 -5 0 IDDlow 2 5 10 15 20 25 30 35 V 0 -50 0 50 VDD HAL 55x, HAL 56x 18 IDD Fig. 3-7: Typical current consumption versus ambient temperature kHz 200 HAL 55x, HAL 56x 180 16 fosc 160 IDDhigh 14 140 12 120 10 100 VDD = 4 V TA = -40 C 8 6 TA = 25 C 80 VDD = 12 V TA=100 C 60 VDD = 24 V 4 40 IDDlow 2 0 0 1 2 3 4 5 20 6 V VDD Fig. 3-6: Typical current consumption versus supply voltage 10 150 C TA Fig. 3-5: Typical current consumption versus supply voltage mA 20 100 0 -50 0 50 100 150 C TA Fig. 3-8: Typ. internal chopper frequency versus ambient temperature MICRONAS HAL55x, HAL56x kHz 200 HAL 55x, HAL 56x kHz 200 180 180 fosc 160 fosc 160 140 140 120 120 100 HAL 55x, HAL 56x 100 TA = -40 C TA = -40 C 80 TA = 25 C 80 TA = 25 C 60 TA=100 C 60 TA=100 C 40 40 20 20 0 0 5 10 15 20 25 30 V VDD Fig. 3-9: Typ. internal chopper frequency versus supply voltage MICRONAS 0 3 4 5 6 7 8 V VDD Fig. 3-10: Typ. internal chopper frequency versus supply voltage 11 HAL556 4. Type Description Applications 4.1. HAL 556 The HAL 556 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: The HAL 556 is a very sensitive unipolar switching sensor (see Fig. 4-1). - applications with large airgap or weak magnets, The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Current consumption In the HAL 55x, HAL 56x two-wire sensor family, the HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic. IDDhigh BHYS IDDlow Magnetic Features: - switching type: unipolar 0 - very high sensitivity BOFF BON B Fig. 4-1: Definition of magnetic switching points for the HAL 556 - typical BON: 6 mT at room temperature - typical BOFF: 4 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +100 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 2.8 25 C 3.4 6 7.4 2 4 5.7 0.5 2 2.7 100 C 3.2 5.7 7.2 1.9 3.8 5.7 0.3 1.9 2.6 Magnetic Offset Min. Typ. Max. 5.2 3 5 4.8 Unit mT 6.2 mT mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 12 MICRONAS HAL556 mT 8 mT 8 HAL 556 HAL 556 BONmax BON BOFF 7 BON BOFF BON 6 7 6 BONtyp BOFFmax 5 5 4 4 BOFFtyp BOFF 3 BONmin 3 TA = -40 C 2 BOFFmin 2 TA = 25 C TA = 100 C VDD = 4 V 1 0 1 0 5 10 15 20 25 30 V Fig. 4-2: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 24 V 0 50 100 150 C TA, TJ VDD mT 8 0 -50 VDD = 12 V HAL 556 Fig. 4-4: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BON 6 5 4 BOFF 3 TA = -40 C TA = 25 C 2 TA = 100 C 1 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. magnetic switching points versus supply voltage MICRONAS 13 HAL560 4.2. HAL 560 Applications The HAL 560 is a low sensitive unipolar switching sensor with an inverted output (see Fig. 4-5). The HAL 560 is the optimal sensor for all applications with one magnetic polarity and strong magnetic amplitude at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with strong magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. Magnetic Features: Current consumption - switching type: unipolar inverted IDDhigh - low sensitivity BHYS - typical BON: 45.6 mT at room temperature - typical BOFF: 51.7 mT at room temperature IDDlow - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON BOFF B Fig. 4-5: Definition of magnetic switching points for the HAL 560 Magnetic Characteristics at TJ = -40 C to +100 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C 41 46.5 52 45 53.5 59.5 4 7 10 50 mT 25 C 41 45.6 52 45 51.7 59.5 3 6.1 9 48.6 mT 100 C 41 44.3 52 45 49.5 59.5 2 5.2 8 46.9 mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 MICRONAS HAL560 mT 60 HAL 560 mT 60 HAL 560 BOFFmax BON BOFF 55 BON BOFF 55 BONmax BOFF 50 BON 45 50 BOFFtyp 45 BONtyp BOFFmin TA = -40 C 40 40 TA = 25 C BONmin TA = 100 C 35 VDD = 4 V 35 VDD = 12 V VDD = 24 V 30 0 5 10 15 20 25 30 V Fig. 4-6: Typ. magnetic switching points versus supply voltage HAL 560 BON BOFF 55 0 50 100 150 C TA, TJ VDD mT 60 30 -50 Fig. 4-8: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BOFF 50 BON 45 TA = -40 C 40 TA = 25 C TA = 100 C 35 30 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage MICRONAS 15 HAL566 4.3. HAL 566 Applications The HAL 566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4-9). The HAL 566 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In the HAL 55x, HAL 56x two-wire sensor family, the HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic. Current consumption IDDhigh BHYS Magnetic Features: - switching type: unipolar inverted IDDlow - high sensitivity - typical BON: 4 mT at room temperature 0 - typical BOFF: 5.9 mT at room temperature BON BOFF B Fig. 4-9: Definition of magnetic switching points for the HAL 566 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +100 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ -40 C 25 C 100 C On point BON Off point BOFF Hysteresis BHYS Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 2.1 4.1 5.9 3.4 6.1 7.7 0.8 2 2.8 2 4 5.7 3.4 5.9 7.2 0.5 1.9 2.7 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 Magnetic Offset Min. Typ. Max. 5.1 3 5 4.7 Unit mT 6.2 mT mT The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 MICRONAS HAL566 mT 8 mT 8 HAL 566 HAL 566 BOFFmax BON BOFF 7 BON BOFF 6 7 6 BONmax BOFF 5 BOFFtyp 5 4 BON 3 4 BONtyp 3 BOFFmin 2 BONmin TA = -40 C 2 TA = 25 C TA = 100 C VDD = 4 V 1 0 1 0 5 10 15 20 25 30 V Fig. 4-10: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 24 V 0 50 100 150 C TA, TJ VDD mT 8 0 -50 VDD = 12 V HAL 566 Fig. 4-12: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 7 BOFF 6 5 4 BON 3 TA = -40 C TA = 25 C 2 TA = 100 C 1 0 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-11: Typ. magnetic switching points versus supply voltage MICRONAS 17 HAL55x, HAL56x 5. Application Notes 5.2. Extended Operating Conditions 5.1. Application Circuit All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Figure 5-1 shows a very simple application with a twowire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the supply voltage for the sensor must be above 4 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: R Lmax + V SUPmin * 4 V 17 mA Typically, the sensors operate with supply voltages above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 4 V is not tested routinely. For special test conditions, please contact MICRONAS. 1 VDD 5.3. Start-up Behavior VSUP VSIG 2 GND RL HAL 556: Fig. 5-1: Application Circuit 1 For applications with disturbances on the supply line or radiated disturbances, a series resistor RV ranging from 10 to 30 and a capacitor both placed close to the sensor are recommended (see figure 5-2). In this case, the maximum RL can be calculated as: R Lmax + After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL 560, HAL 566: In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. V SUPmin * 4 V * RV 17 mA 1 VDD RV VSUP Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the current consumption is not defined and can toggle between low and high. 4.7 nF For magnetic fields between BOFF and BON, the current consumption of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. VSIG 2 GND RL Fig. 5-2: Application Circuit 2 18 MICRONAS HAL55x, HAL56x 5.4. Ambient Temperature 5.5. EMC Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). The EMC performance has been tested in a lab environment with EMC optimized printed circuit board layouts. The results in the following tables show that function classes A and C could be reached in these investigations. Depending on customer circuit designs and layouts, EMC results obtained in those applications may be different from the ones obtained in the MICRONAS lab investigations. TJ = TA + T At static conditions and continuous operation, the following equation is valid: Test Circuits for Electromagnetic Compatibility Test pulses VEMC corresponding to DIN 40839. T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: RV1 TAmax = TJmax - T 100 For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 s to 1 ms, the following equation can be used: DT + I DD * V DD * R th * MICRONAS Note: The international standard ISO 7637 is similar to the product standard DIN 40839. t on t off ) t on RV2 30 1 VDD VEMC NC 4.7 nF 2 GND Fig. 5-3: EMC test circuit 19 HAL55x, HAL56x Interferences conducted along supply lines in 12 V onboard systems Product standard: DIN 40839 part 1 Test-Pulse Severity Level Us in V Pulses/ Time Function Class Remarks 1 IV -100 5000 C 5 s pulse interval 2 IV 100 5000 C 0.5 s pulse interval 3a IV -150 1h A 3b IV 100 1h A 4 IV -7 5 C 5 II1) 46.5 10 C 1) 10 s pulse interval Function class C at severity level IV (86.5 V) can be obtained when changing RV1 to 270 . Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 40839 part 3 Test-Pulse Severity Level 1 IV 2 Us in V Pulses/ Time Function Class Remarks -30 500 A 5 s pulse interval IV 30 500 A 0.5 s pulse interval 3a IV -60 10 min A 3b IV 40 10 min A 6. Data Sheet History 1. Final data sheet: "HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, April 6, 1999, 6251-425-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: http://www.intermetall.de Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (04/99) Order No. 6251-425-1DS 20 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. MICRONAS