BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES * Low profile package * Ideal for automated placement * Controlled avalanche characteristics * Glass passivated junction * Low reverse current * High surge current capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AC (SMA) * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V to 1600 V IFSM 30 A IR 1.0 A VF 1.15 V ER 20 mJ TJ max. 150 C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note * BYG10Y for commercial grade only Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 1600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 C (for BYG10D thru BYG10M) ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 C Revision: 21-Dec-11 V Document Number: 88957 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J IF = 1 A IF = 1.5 A BYG10K BYG10M BYG10Y UNIT 1.1 TJ = 25 C TJ = 25 C Maximum DC reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 100 C VF V 1.15 1 IR A 10 4 trr s Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient BYG10D BYG10G BYG10J BYG10K RJL 25 RJA (1) 150 RJA (2) 125 RJA (3) 100 BYG10M BYG10Y UNIT C/W C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 m Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG10D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG10D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel BYG10DHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 21-Dec-11 Document Number: 88957 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 400 Reverse Power Dissipation (mW) 100 Forward Current (A) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.01 0.001 PR - Limit at 100 % VR 300 250 200 150 PR - Limit at 80 % VR 100 50 0 0 0.5 1.0 1.5 2.0 2.5 25 3.0 50 75 100 125 150 Forward Voltage (V) Junction Temperature (C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 30 1.6 1.4 f = 1 MHz VR = VRRM Half Sine-Wave RJA 25 K/W 1.2 25 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 350 1.0 0.8 0.6 0.4 RJA 125 K/W RJA 150 K/W 0.2 20 15 10 5 0 0 0 20 40 60 80 100 120 140 0.1 160 1 10 100 Ambient Temperature (C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 1000 5000 TA = 125 C Reverse Recovery Time (ns) Reverse Current (A) VR = VRRM 100 10 4000 TA = 100 C 3000 TA = 75 C TA = 50 C 2000 TA = 25 C 1000 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current Revision: 21-Dec-11 Document Number: 88957 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Reverse Recovery Charge (nC) 2000 TA = 125 C 1600 TA = 100 C 1200 TA = 75 C TA = 50 C 800 TA = 25 C 400 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Fig. 7 - Reverse Recovery Charge vs. Forward Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Dec-11 Document Number: 88957 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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