BYG10KHE3/TR3 - Vishay [General Semiconductor]

BYG10D thru BYG10Y

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Revision: 21-Dec-11 1Document Number: 88957

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Standard Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Controlled avalanche characteristics

• Glass passivated junction

• Low reverse current

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per J-STD-002

and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Note

• BYG10Y for commercial grade only

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.5 A

VRRM 200 V to 1600 V

IFSM 30 A

IR1.0 μA

VF1.15 V

ER20 mJ

TJ max. 150 °C

DO-214AC (SMA)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT

Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y

Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 1600 V

Average forward current IF(AV) 1.5 A

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load IFSM 30 A

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)

ER20 mJ

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

BYG10D thru BYG10Y

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Revision: 21-Dec-11 2Document Number: 88957

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Notes

(1) Mounted on epoxy-glass hard tissue

(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu

(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT

Maximum

instantaneous

forward voltage (1)

IF = 1 A

TJ = 25 °C VF

1.1

IF = 1.5 A 1.15

Maximum DC

reverse current VR = VRRM

TJ = 25 °C IR

1μA

TJ = 100 °C 10

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 4μs

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT

Typical thermal resistance, junction to lead RJL 25 °C/W

Typical thermal resistance, junction to ambient

RJA (1) 150

°C/WRJA (2) 125

RJA (3) 100

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

BYG10D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel

BYG10D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel

BYG10DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel

BYG10DHE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel

BYG10D thru BYG10Y

www.vishay.com Vishay General Semiconductor

Revision: 21-Dec-11 3Document Number: 88957

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Max. Average Forward Current vs. Ambient Temperature

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Reverse Recovery Time vs. Forward Current

0.001

0.01

0.1

100

0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage (V)

Forward Current (A)

TJ = 150 °C

TJ = 25 °C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 20 40 60 80 100 120 140 160

Ambient Temperature (°C)

Average Forward Current (A)

θJA

≤

125 K/W

θJA

≤

150 K/W

= V

RRM

Half Sine-Wave

θJA

≤

25 K/W

100

1000

25 50 75 100 125 150

Reverse Current (µA)

Junction Temperature (°C)

= V

RRM

100

150

200

250

300

350

400

25 50 75 100 125 150

VR = VRRM

PR - Limit at 100 % VR

Reverse Power Dissipation (mW)

Junction Temperature (°C)

PR - Limit at 80 % VR

0.1 1 10 100

f = 1 MHz

Reverse Voltage (V)

Diode Capacitance (pF)

1000

2000

3000

4000

5000

0.2 0.4 0.6 0.8

Reverse Recovery Time (ns)

Forward Current (A)

1.0

= 100 °C

= 125 °C

= 25 °C

= 75 °C

= 50 °C

= 0.5 A, i

= 0.125 A

BYG10D thru BYG10Y

www.vishay.com Vishay General Semiconductor

Revision: 21-Dec-11 4Document Number: 88957

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Reverse Recovery Charge vs. Forward Current

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

400

800

1200

1600

2000

0.2 0.4 0.6 0.8

Reverse Recovery Charge (nC)

Forward Current (A)

1.0

TA = 100 °C

TA = 125 °C

TA = 25 °C

TA = 75 °C

TA = 50 °C

IR = 0.5 A, iR = 0.125 A

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)

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Revision: 12-Mar-12 1Document Number: 91000

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