ABB Semiconductors AG reserves the right to change specifications without notice.
VDRM
= 2500
V
ITGQM
= 2000
A
ITSM = 16
kA
VT0 = 1.66
V
rT = 0.57
mW
VDClin
= 1400
V
Gate turn-off Thyristor
5SGA 20H2501
Doc. No. 5SYA1205-01 Jun. 04
· Patented free-floating silicon technology
· Low on-state and switching losses
· Annular gate electrode
· Industry standard housing
· Cosmic radiation withstand rating
Blocking
VDRM Repetitive peak off-state voltage 2500
V VGR ³ 2V
VRRM Repetitive peak reverse voltage 17
V
IDRM Repetitive peak off-state current £
30
mA VD = VDRM VGR ³ 2V
IRRM Repetitive peak reverse current £
50
mA VR = VRRM RGK = ¥
VDClink Permanent DC voltage for 100
FIT failure rate
1400
V -40 £ Tj £ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
min.
17
kN
Fm
Mounting force max.
24
kN
A Acceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
M Weight
0.8
kg
DS Surface creepage distance ³
22
mm
Da Air strike distance ³
13
mm
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 2 of 9
GTO Data
On-state
ITAVM Max. average on-state current 830
A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 1300
A
ITSM 16
kA tP =
10
ms T
j
= 125°C
Max. peak non-repetitive
surge current 32
kA tP =
1
ms After surge:
I2t Limiting load integral 1.28×106 A2s tP =
10
ms V
D
= VR = 0V
0.51×106
A2s tP =
1
ms
V
T
On-state voltage 2.80
V IT =
2000
A
VT0 Threshold voltage 1.66
V IT =
200 - 2500 A Tj = 125 °C
rT Slope resistance 0.57
mW
IH Holding current 50
A Tj =
25 °C
Gate
VGT Gate trigger voltage 1.0
V VD
=
24 V Tj = 25 °C
IGT Gate trigger current 2.5
A RA
=
0.1 W
VGRM Repetitive peak reverse voltage 17
V
I
GRM Repetitive peak reverse current 50
mA VG
=
VGRM
Turn-on switching
di/dtcrit Max. rate of rise of on-state 400
A/µs f = 200Hz I
T
= 2000 A, T
j
= 125 °C
current 700
A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs
td Delay time 1.5
µs VD
=
0.5
VDRM
Tj =
125
°C
tr Rise time 3.5
µs IT =
2000
A di/dt =
200
A/µs
ton(min) Min. on-time 80
µs IGM
=
30
A diG/dt
=
20
A/µs
Eon Turn-on energy per pulse 0.75
Ws CS
=
4
µF R
S
=
5
W
Turn-off switching
2000
A VDM
=
VDRM diGQ/dt
= 30
A/µs
ITGQM Max controllable turn-off
current
CS
=
4 µF LS £ 0.3
µH
ts Storage time 22.0
µs VD =
½
VDRM V
DM = V
DRM
tf Fall time 2.0
µs Tj =
125
°C
diGQ/dt
= 30
A/µs
toff(min) Min. off-time 80
µs ITGQ
=
ITGQM
Eoff Turn-off energy per pulse 3.5
Ws CS
=
4
µF
RS = 5
W
IGQM Peak turn-off gate current 700
A LS £
0.3
µH
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 3 of 9
Thermal
Tj Storage and operating -40...125°C
junction temperature range
RthJC Thermal resistance 30
K/kW Anode side cooled
junction to case 39
K/kW Cathode side cooled
17
K/kW Double side cooled
RthCH Thermal resistance case to 10
K/kW Single side cooled
heat sink 5
K/kW Double side cooled
i 1 2 3 4
RI (K/kW) 11.7 4.7 0.64 0.0001
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
4
1
i
/t-
thJC i
å
=
i
t
ti (s) 0.9 0.26 0.002 0.001
Fig. 1 Transient thermal impedance, junction to case.
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 4 of 9
Fig. 2 On-state characteristics
Fig. 3 Average on-state power dissipation vs.
average on-state current.
Fig. 4 Surge current and fusing integral vs. pulse
width
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ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 5 of 9
Fig. 5 Forward blocking voltage vs. gate-cathode
resistance.
Fig. 6 Static dv/dt capability: Forward blocking
voltage vs. neg. gate voltage or gate
cathode resistance.
Fig. 7 Forwarde gate current vs. forard gate
voltage.
Fig. 8 Gate trigger current vs. junction
temperature
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 6 of 9
Fig. 9 Turn-on energy per pulse vs. on-state
current and turn-on voltage.
Fig. 10 Turn-on energy per pulse vs. on.-state
current and current rise rate
Common Test conditions for figures 9, 10 and 11:
diG/dt = 20 A/µs
CS = 4 µF
RS = 5 W
Tj = 125 °C
Definition of Turn-on energy:
)0.1 I 0, (t G
20
0
GMT
s
Don IdtIVE ×==×= ò
m
Common Test conditions for figures 12, 13 and 15:
Definition of Turn-off energy:
)0.9 I 0, t ( T
40
0
TGQT
s
Doff IdtIVE ×==×= ò
m
Fig. 11 Turn-on energy per pulse vs. on-state
current and turn-on voltage.
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 7 of 9
5SGA 20H2501
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0500 1000 1500 2000
Eoff [J]
1000
2000
3000
4000
5000
6000
7000
VDM=VDRM
QGQa
QGQa
[mC]
Conditions:
VD = 0.5×VDM
di GQ / dt = 30 A/
ms
CS = 4 mF, RS = 5 W
Tj = 125°C
0.75 V
DRM
0.5 V
DRM
ITGQ [A]
5SGA 20H2501
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0500 1000 1500 2000
I
TGQ
[A]
Eoff [J]
CS = 3 mF
CS = 4 mF
CS = 6 mF
Conditions:
VD = 0.75 V DM ,VDM = VDRM
di GQ/dt = 30 A/ ms
RS = 5 W
Tj = 125°C
Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage. Extracted gate
charge vs. turn-off current.
Fig. 13 Turn-off energy per pulse vs. turn-off
current and snubber capacitance.
0
1
2
3
4
5
-10 0 10 20 30 40 50 60 70 80 90100110120
Eoff[J] IGQM [A]
5SGA 20H2501
0
10
20
30
40
50
0 25 50 75 100 125
ts[ms]
0
200
400
600
800
1000
tS
IGQM
Tj [°C]
EOFF
Conditions:
VD= 0.5 V
DM , VDM = VDRM
ITGQ = 2000 A ,di GQ /dt = 30 A/
ms
CS = 4 mF, RS = 5 W , Tj = 125 °C
Fig. 14 Required snubber capacitor vs. max
allowable turn-off current.
Fig. 15 Turn-off energy per pulse, storage time
and peak turn-off gate current vs. junction
temperature
0
10
20
30
40
50
010 20 30 40 50 60
ts[s]
0
200
400
600
800
1000
tS
IGQM [A]
IGQM
Conditions:
ITGQ = 2000 A
Tj = 125 °C
diGQ/dt [A/ms]
5SGA 20H2501
0
10
20
30
40
50
0500 1000 1500 2000
ts[s]
0
200
400
600
800
1000
tS
IGQM [A]
IGQM
Conditions:
diGQ/dt = 30 A/ms
Tj = 125 °C
ITGQ [A]
5SGA 20H2501
Fig. 16 Storage time and peak turn-off gate current
vs. neg. gate current rise rate.
Fig. 17 Storage time and peak turn-off gate
current vs. turn-off current
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1205-01 Jun. 04 page 8 of 9
Fig. 18 General current and voltage waveforms with GTO-specific symbols
Fig. 19 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
5SGA 20H2501
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1205-01 Jun. 04
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Tel: +41 (0)62 888 6419
Fax: +41 (0)62 888 6306
E-mail info@ch.abb.com
Internet www.abbsem.com
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
