© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
FSQ0765RQ Rev. 1.0.1
April 2009
FSQ0765RQ
Green-Mode Fairchild Power Switch (FPS™) for
Quasi-Resonant Operation - Low EMI and High Efficiency
Features
!Optimized for Quasi-Resonant Converter (QRC)
!Low EMI through Variable Frequency Control and AVS
(Alternating Valley Switching)
!High-Efficiency through Minimum Voltage Switching
!Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
!Advanced Burst-Mode Operation for Low Standby
Power Consumption
!Simple Scheme for Sync Voltage Detection
!Pulse-by-Pulse Current Limit
!Various Protection functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD) with Hysteresis, Output Short
Protection (OSP)
!Under-Voltage Lockout (UVLO) with Hysteresis
!Internal Startup Circuit
!Internal High-Voltage Sense FET (650V)
!Built-in Soft-Start (17.5ms)
Applications
!Power Supply for LCD TV and Monitor, VCR, SVR,
STB, and DVD & DVD Recorder
!Adapter
Related Resources
Visit http://www.fairchildsemi.com/apnotes/ for:
!AN-4134: Design Guidelines for Offline Forward
Converters Using Fairchild Power Switch (FPS)
!AN-4137: Design Guidelines for Offline Flyback
Converters Using Fairchild Power Switch (FPS)
!AN-4140: Transformer Design Consideration for
Offline Flyback Converters Using Fairchild Power
Switch (FPS)
!AN-4141: Troubleshooting and Design Tips for
Fairchild Power Switch (FPS) Flyback Applications
!AN-4145: Electromagnetic Compatibility for Power
Converters
!AN-4147: Design Guidelines for RCD Snubber of
Flyback
!AN-4148: Audible Noise Reduction Techniques for
Fairchild Power Switch Fairchild Power Switch(FPS™)
Applications
!AN-4150: Design Guidelines for Flyback Converters
Using FSQ-Series Fairchild Power Switch (FPS)
Description
A Quasi-Resonant Converter (QRC) generally shows
lower EMI and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for quasi-resonant
operation and Alternating Valley Switching (AVS). The
PWM controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout (UVLO), Leading-
Edge Blanking (LEB), optimized gate driver, internal soft-
start, temperature-compensated precise current sources
for a loop compensation, and self-protection circuitry.
Compared with a discrete MOSFET and PWM controller
solution, the FSQ-series can reduce total cost,
component count, size, and weight; while simultaneously
increasing efficiency, productivity, and system reliability.
This device provides a basic platform that is well suited
for cost-effective designs of quasi-resonant switching
flyback converters.
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 2
Ordering Information
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50°C ambient.
5. For Fairchild’s definition of “green” Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html. Eco Status: RoHS.
Product
Number PKG.(5) Operating
Temp.
Current
Limit
RDS(ON)
Max.
Maximum Output Power(1)
Replaces
Devices
230VAC±15%(2) 85-265VAC
Adapter(3) Open
Frame(4) Adapter(3) Open
Frame(4)
FSQ0765RQWDTU TO-220F-6L -25 to +85°C 3.5A 1.6Ω80W 90W 48W 70W FSCM0765R
FSDM0765RB
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 3
Application Diagram
Figure 1. Typical Flyback Application
Internal Block Diagram
Figure 2. Internal Block Diagram
VCC
GND
Drain
Sync
VO
PWM
FB
AC
IN
Vstr
FSQ0765R Rev.00
8V/12V
Vref
S
Q
R
VCC Vref
Idelay IFB
VSD
VOVP
VOCP
S
Q
Q
R
R
3R
VCC good
VCC Drain
FB
GND
AOCP
Gate
driver
VCC good
LEB
250ns
PWM
VBurst
5
Sync
(1.1V)
Soft-
Start
0.35/0.55
OSC
Vstr
TSD
4
3 16
FSQ0765R Rev.00
2
AVS
Q
VOSP
LPF
LPF
tON < tOSP
after SS
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 4
Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name Description
1DrainSenseFET drain. High-voltage power SenseFET drain connection.
2GNDGround. This pin is the control ground and the SenseFET source.
3V
CC
Power Supply. This pin is the positive supply input. This pin provides internal operating current for
both startup and steady-state operation.
4FB
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The
collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be
placed between this pin and GND. If the voltage of this pin reaches 6V, the overload protection
triggers, which shuts down the FPS.
5 Sync
Sync.
This pin is internally connected to the sync-detect comparator for quasi-resonant switching.
In normal quasi-resonant operation, the threshold of the sync comparator is 1.2V/1.0V.
6V
str
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link. At
start-up, the internal high-voltage current source supplies internal bias and charges the external
capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current source is disabled.
It is not recommended to connect Vstr and Drain together.
6. Vstr
5. Sync
4. FB
3. VCC
2. GND
1. Drain
FSQ0765R Rev.00
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 5
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=81mH, starting TJ=25°C.
Thermal Impedance
TA = 25°C unless otherwise specified.
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
Symbol Parameter Min. Max. Unit
Vstr Vstr Pin Voltage 500 V
VDS Drain Pin Voltage 650 V
VCC Supply Voltage 20 V
VFB Feedback Voltage Range -0.3 13.0 V
VSync Sync Pin Voltage -0.3 13.0 V
IDM Drain Current Pulsed 14.4 A
IDContinuous Drain Current(6) TC = 25°C 3.6 A
TC = 100°C 2.28
EAS Single Pulsed Avalanche Energy(7) 570 mJ
PDTotal Power Dissipation(Tc=25°C) 45 W
TJOperating Junction Temperature Internally limited °C
TAOperating Ambient Temperature -25 +85 °C
TSTG Storage Temperature -55 +150 °C
ESD Electrostatic Discharge Capability Human Body Model 2 kV
Charged Device Model 2
Symbol Parameter Value Unit
θJA Junction-to-Ambient Thermal Resistance(8) 50 °C/W
θJC Junction-to-Case Thermal Resistance(9) 2.8 °C/W
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 6
Electrical Characteristics
TA = 25°C unless otherwise specified.
Note:
10. Propagation delay in the control IC.
Continued on the following page...
Symbol Parameter Condition Min. Typ. Max. Unit
SENSEFET SECTION
BVDSS Drain Source Breakdown Voltage VCC = 0V, ID = 100µA 650 V
IDSS Zero-Gate-Voltage Drain Current VDS = 520V, VGS = 0V 300 µA
RDS(ON) Drain-Source On-State Resistance TJ = 25°C, ID = 1.8A 1.3 1.6 Ω
COSS Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz 125 pF
td(on) Turn-On Delay Time
VDD = 325V, ID = 6.5A
27 ns
trRise Time 102 ns
td(off) Turn-Off Delay Time 63 ns
tfFall Time 65 ns
CONTROL SECTION
tON.MAX Maximum On Time TJ = 25°C 8.8 10.0 11.2 µs
tBBlanking Time TJ = 25°C, Vsync = 5V 13.5 15.0 16.5 µs
tWDetection Time Window TJ = 25°C, Vsync = 0V 6.0 µs
fSInitial Switching Frequency 59.6 66.7 75.8 kHz
ΔfSSwitching Frequency Variation(11) -25°C < TJ < 85°C ±5 ±10 %
tAVS AVS Triggering
Threshold(11)
On Time at VIN = 240VDC, Lm = 360μH
(AVS triggered when VAVS>spec
& tAVS<spec.)
4.0 µs
VAVS
Feedback
Voltage 1.2 V
tSW Switching Time Variance by AVS(11) Sync = 500kHz sine input
VFB = 1.2V, tON = 4.0µs 13.5 20.5 µs
IFB Feedback Source Current VFB = 0V 700 900 1100 µA
DMIN Minimum Duty Cycle VFB = 0V 0 %
VSTART UVLO Threshold Voltage 11 12 13 V
VSTOP After turn-on 7 8 9 V
tS/S Internal Soft-Start Time With free-running frequency 17.5 ms
BURST-MODE SECTION
VBURH
Burst-Mode Voltages TJ = 25°C, tPD = 200ns(10)
0.45 0.55 0.65 V
VBURL 0.25 0.35 0.45 V
Hysteresis 200 mV
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 7
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Notes:
11. Guaranteed by design, but not tested in production.
12. Includes gate turn-on time.
Symbol Parameter Condition Min. Typ. Max. Unit
PROTECTION SECTION
ILIMIT Peak Current Limit TJ = 25°C, di/dt = 460mA/µs 3.08 3.50 3.92 A
VSD Shutdown Feedback Voltage VCC = 15V 5.5 6.0 6.5 V
IDELAY Shutdown Delay Current VFB = 5V 4 5 6 µA
tLEB Leading-Edge Blanking Time(11) 250 ns
tOSP
Output Short
Protection(11)
Threshold Time TJ = 25°C
OSP triggered when tON<tOSP ,
VFB>VOSP & lasts longer than
tOSP_FB
1.2 1.4 µs
VOSP
Threshold Feedback
Voltage 1.8 2.0 V
tOSP_FB Feedback Blanking Time 2.0 2.5 3.0 µs
TSD Thermal
Shutdown(11)
Shutdown Temperature 125 140 155 °C
Hys Hysteresis 60
SYNC SECTION
VSH1 Sync Threshold Voltage 1 VCC = 15V, VFB = 2V 1.0 1.2 1.4 V
VSL1 0.8 1.0 1.2
tsync Sync Delay Time(11)(12) 230 ns
VSH2 Sync Threshold Voltage 2 VCC = 15V, VFB = 2V 4.3 4.7 5.1 V
VSL2 4.0 4.4 4.8
VCLAMP Low Clamp Voltage ISYNC_MAX = 800µA
ISYNC_MIN = 50µA 0.0 0.4 0.8 V
VOVP Over-Voltage
Protection
Threshold Voltage VCC = 15V, VFB=2V 7.4 8.0 8.6 V
tOVP Blanking Time(11) 1.0 1.7 2.4 µs
TOTAL DEVICE SECTION
IOP
Operating Supply Current
(Control Part Only) VCC = 13V, VFB=0V 1 3 5 mA
ISTART Start Current VCC = 10V
(before VCC reaches VSTART)350 450 550 µA
ICH Startup Charging Current VCC = 0V, VSTR = minimum 50V 0.65 0.85 1.00 mA
VSTR Minimum VSTR Supply Voltage 26 V
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 8
Comparison Between FSDM0x65RNB and FSQ-Series
Function FSDM0x65RE FSQ-Series FSQ-Series Advantages
Operation Method Constant
Frequency PWM
Quasi-Resonant
Operation
!Improved efficiency by valley switching
!Reduced EMI noise
!Reduced components to detect valley point
EMI Reduction Frequency
Modulation Reduce EMI Noise
!Valley switching
!Inherent frequency modulation
!Alternate valley switching
Hybrid Control
CCM or AVS
Based on Load
and Input Condition
!Improves efficiency by introducing hybrid control
Burst-Mode
Operation
Burst-Mode
Operation
Advanced
Burst-Mode
Operation
!Improved standby power by AVS in burst-mode
Strong Protections OLP, OVP OLP, OVP,
AOCP, OSP
!Improved reliability through precise AOCP
!Improved reliability through precise OSP
TSD 145°C without
Hysteresis
140°C with 60°C
Hysteresis
!Stable and reliable TSD operation
!Converter temperature range
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 9
Typical Performance Characteristics
These characteristic graphs are normalized at TA= 25°C.
Figure 4. Operating Supply Current (IOP) vs. TAFigure 5. UVLO Start Threshold Voltage
(VSTART) vs. TA
Figure 6. UVLO Stop Threshold Voltage
(VSTOP) vs. TA
Figure 7. Startup Charging Current (ICH) vs. TA
Figure 8. Initial Switching Frequency (fSW) vs. TAFigure 9. Maximum On Time (tON.MAX) vs. TA
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 10
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
Figure 10. Blanking Time (tB) vs. TAFigure 11. Feedback Source Current (IFB) vs. TA
Figure 12. Shutdown Delay Current (IDELAY) vs. TA Figure 13. Burst-Mode High Threshold Voltage
(Vburh) vs. TA
Figure 14. Burst-Mode Low Threshold Voltage
(Vburl) vs. TA
Figure 15. Peak Current Limit (ILIM) vs. TA
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 11
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
Figure 16. Sync High Threshold Voltage 1
(VSH1) vs. TA
Figure 17. Sync Low Threshold Voltage 1
(VSL1) vs. TA
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA Figure 19. Over-Voltage Protection (VOV) vs. TA
Figure 20. Sync High Threshold Voltage 2
(VSH2) vs. TA
Figure 21. Sync Low Threshold Voltage 2
(VSL2) vs. TA
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
-25 0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Normalized
Temperature [°C]
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 12
Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the VCC pin, as
illustrated in Figure 22. When VCC reaches 12V, the
FPS™ begins switching and the internal high-voltage
current source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
Figure 22. Startup Circuit
2. Feedback Control: FPS employs current-mode
control, as shown in Figure 23. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the Rsense resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
pulling down the feedback voltage and reducing the duty
cycle. This typically happens when the input voltage is
increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 23. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
clamping VFB*. Therefore, the peak value of the current
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current-mode PWM control. To counter this effect, the
FPS employs a leading-edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
Figure 23. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a quasi-
resonant switching technique to minimize the switching
noise and loss. The basic waveforms of the quasi-
resonant converter are shown in Figure 24. To minimize
the MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, which is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 24.
Figure 24. Quasi-Resonant Switching Waveforms
8V/12V
Vref
Internal
Bias
VCC Vstr
ICH
VCC good
VDC
Ca
FSQ0765R Rev.00
3 6
4OSC
VCC Vref
Idelay IFB
VSD
R
3R
Gate
driver
OLP
D1 D2
+
VFB*
-
VFB
KA431
CB
VO
FOD817A
Rsense
SenseFET
FSQ0765R Rev. 00
VDC
VRO
VRO
Vds
tF
1.2V
Vsync
230ns Delay
1.0V
ONON
Vovp (8V)
FSQ0765R Rev.00
MOSFET Gate
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 13
The switching frequency is the combination of blank time
(t
B
) and detection time window (t
W
). In case of a heavy
load, the sync voltage remains flat after t
B
and waits for
valley detection during t
W
. This leads to a low switching
frequency not suitable for heavy loads. To correct this
drawback, additional timing is used. The timing
conditions are described in Figures 25, 26, and 27. When
the V
sync
remains flat higher than 4.4V at the end of t
B
that is t
X
, the next switching cycle starts after internal
delay time from t
X
. In the second case, the next switching
occurs on the valley when the V
sync
goes below 4.4V
within t
B
. Once V
sync
detects the first valley within t
B
, the
other switching cycle follows classical QRC operation.
Figure 25. Vsync > 4.4V at tX
Figure 26. Vsync < 4.4V at tX
Figure 27. After Vsync Finds First Valley
4. Protection Circuits: The FSQ-series has several
self-protective functions, such as Overload Protection
(OLP), Abnormal Over-Current Protection (AOCP),
Over-Voltage Protection (OVP), and Thermal Shutdown
(TSD). All the protections are implemented as auto-
restart mode. Once the fault condition is detected,
switching is terminated and the SenseFET remains off.
This causes VCC to fall. When VCC falls down to the
Under-Voltage Lockout (UVLO) stop voltage of 8V, the
protection is reset and the startup circuit charges the
VCC capacitor. When the VCC reaches the start voltage
of 12V, normal operation resumes. If the fault condition is
not removed, the SenseFET remains off and VCC drops
to stop voltage again. In this manner, the auto-restart can
alternately enable and disable the switching of the power
SenseFET until the fault condition is eliminated.
Because these protection circuits are fully integrated into
the IC without external components, the reliability is
improved without increasing cost.
Figure 28. Auto Restart Protection Waveforms
tB=15
μ
s
IDS
VDS
Vsync
internal delay
IDS
4.4V
1.2V
1.0V
tX
FSQ0765R Rev. 00
tB=15
μ
s
IDS
VDS
Vsync
internal delay
IDS
4.4V
1.2V
1.0V
tX
FSQ0765R Rev. 00
tB=15
μ
s
IDS IDS
VDS
Vsync
internal delay
4.4V
1.2V
1.0V
ingnore
tX
FSQ0765R Rev. 00
Fault
situation
8V
12V
VCC
VDS
t
Fault
occurs
Fault
removed
Normal
operation
Normal
operation
Power
on
FSQ0765R Rev. 00
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 14
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the
protection circuit should trigger to protect the SMPS.
However, even when the SMPS is in the normal
operation, the overload protection circuit can be
triggered during the load transition. To avoid this
undesired operation, the overload protection circuit is
designed to trigger only after a specified time to
determine whether it is a transient situation or a true
overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
through the SenseFET is limited, and therefore the
maximum input power is restricted with a given input
voltage. If the output consumes more than this maximum
power, the output voltage (VO) decreases below the set
voltage. This reduces the current through the opto-
coupler LED, which also reduces the opto-coupler
transistor current, thus increasing the feedback voltage
(VFB). If VFB exceeds 2.5V, D1 is blocked and the 5µA
current source starts to charge CB slowly up to VCC. In
this condition, VFB continues increasing until it reaches
6V, when the switching operation is terminated, as
shown in Figure 29. The delay time for shutdown is the
time required to charge CFB from 2.5V to 6V with 5µA. A
20 ~ 50ms delay time is typical for most applications.
Figure 29. Overload Protection
4.2 Abnormal Over-Current Protection (AOCP): When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high di/dt can
flow through the SenseFET during the LEB time. Even
though the FSQ-series has overload protection, it is not
enough to protect the FSQ-series in that abnormal case,
since severe current stress is imposed on the SenseFET
until OLP triggers. The FSQ-series has an internal
AOCP circuit shown in Figure 30. When the gate turn-on
signal is applied to the power SenseFET, the AOCP
block is enabled and monitors the current through the
sensing resistor. The voltage across the resistor is
compared with a preset AOCP level. If the sensing
resistor voltage is greater than the AOCP level, the set
signal is applied to the latch, resulting in the shutdown of
the SMPS.
Figure 30. Abnormal Over-Current Protection
4.3 Output-Short Protection (OSP):
If the output is
shorted, steep current with extremely high di/dt can flow
through the SenseFET during the LEB time. Such a
steep current brings high voltage stress on the drain of
SenseFET when turned off. To protect the device from
such an abnormal condition, OSP is included in the FSQ-
series. It is comprised of detecting V
FB
and SenseFET
turn-on time. When the V
FB
is higher than 2V and the
SenseFET turn-on time is lower than 1.2µs, the FPS
recognizes this condition as an abnormal error and shuts
down PWM switching until V
CC
reaches V
start
again. An
abnormal condition output short is shown in Figure 31.
Figure 31. Output Short Waveforms
4.4 Over-Voltage Protection (OVP): If the secondary-
side feedback circuit malfunctions or a solder defect
causes an opening in the feedback path, the current
through the opto-coupler transistor becomes almost
zero. Then, VFB climbs up in a similar manner to the
overload situation, forcing the preset maximum current
to be supplied to the SMPS until the overload protection
triggers. Because more energy than required is provided
to the output, the output voltage may exceed the rated
voltage before the overload protection triggers, resulting
in the breakdown of the devices in the secondary side.
To prevent this situation, an OVP circuit is employed. In
general, the peak voltage of the sync signal is
proportional to the output voltage and the FSQ-series
VFB
t
2.5V
6.0V
Overload protection
t12= CFB*(6.0-2.5)/Idelay
t1t2
FSQ0765R Rev.00
2
S
Q
Q
R
OSC
R
3R
GND
Gate
driver
LEB
250ns
PWM
+
-
VOCP
AOCP
Rsense
FSQ0765R Rev.00
D
MOSFET
Drain
Current
Rectifier
Diode Current
VFB
Vo
0
0
output short occurs
1.2us
Io
0
ILIM
Turn-off delay
Minimum turn-on time
FSQ0765R Rev. 00
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 15
uses a sync signal instead of directly monitoring the
output voltage. If the sync signal exceeds 8V, an OVP is
triggered, shutting down the SMPS. To avoid undesired
triggering of OVP during normal operation, there are two
points to be considered, which are depicted in Figure 32.
One is at the peak voltage of the sync signal should be
designed below 6V and the other is that the spike of the
sync pin should be as low as possible; not to get longer
than tOVP by decreasing the leakage inductance shown
at VCC winding coil.
Figure 32. OVP Triggering
4.5 Thermal Shutdown with Hysteresis (TSD): The
SenseFET and the control IC are built in one package.
This allows the control IC to detect abnormally high
temperature of the SenseFET. If the temperature
exceeds approximately 140°C, the thermal shutdown
triggers IC shutdown. The IC recovers its operation when
the junction temperature decreases 60°C from TSD
temperature and VCC reaches startup voltage (Vstart).
5. Soft-Start: The FPS has an internal soft-start circuit
that increases PWM comparator inverting input voltage
with the SenseFET current slowly after it starts up. The
typical soft-start time is 17.5ms. The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. This
mode helps prevent transformer saturation and reduces
stress on the secondary diode during startup.
6. Burst Operation: To minimize power dissipation in
standby mode, the FPS enters burst-mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 33, the device automatically enters
burst-mode when the feedback voltage drops below
VBURL (350mV). At this point, switching stops and the
output voltages start to drop at a rate dependent on
standby current load. This causes the feedback voltage
to rise. Once it passes VBURH (550mV), switching
resumes. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
Figure 33. Waveforms of Burst Operation
7. Switching Frequency Limit: To minimize switching
loss and Electromagnetic Interference (EMI), the
MOSFET turns on when the drain voltage reaches its
minimum value in quasi-resonant operation. However,
this causes switching frequency to increases at light load
conditions. As the load decreases or input voltage
increases, the peak drain current diminishes and the
switching frequency increases. This results in severe
switching losses at light-load condition, as well as
intermittent switching and audible noise. These problems
create limitations for the quasi-resonant converter
topology in a wide range of applications.
To overcome these problems, FSQ-series employs a
frequency-limit function, as shown in Figures 34 and 35.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (tB). After the
blanking time, the controller finds the valley within the
detection time window (tW) and turns on the MOSFET, as
shown in Figures 34 and Figure 35 (Cases A, B, and C).
V
Vcc_coil &V
CC
V
sync
VOVP (8V)
VCC V
Vcc_coil
V
CLAMP
VSH2 (4.8V)
V
DC
N
pri
N
Vcc
Absolue max VCC (20V)
tOVP
tOVP
Improper OVP triggering
FSQ0765R Rev.00
VFB
VDS
0.35V
0.55V
IDS
VO
VO
set
time
Switching
disabled
t1 t2 t3
Switching
disabled t4
FSQ0765R Rev.00
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 16
If no valley is found during tW, the internal SenseFET is
forced to turn on at the end of tW (Case D). Therefore,
the devices have a minimum switching frequency of
48kHz and a maximum switching frequency of 67kHz.
Figure 34. QRC Operation with Limited Frequency
8. AVS (Alternating Valley Switching): Due to the
quasi-resonant operation with limited frequency, the
switching frequency varies depending on input voltage,
load transition, and so on. At high input voltage, the
switching on time is relatively small compared to low
input voltage. The input voltage variance is small and the
switching frequency modulation width becomes small. To
improve the EMI performance, AVS is enabled when
input voltage is high and the switching on time is small.
Internally, quasi-resonant operation is divided into two
categories; one is first-valley switching and the other is
second-valley switching after blanking time. In AVS, two
successive occurrences of first-valley switching and the
other two successive occurrences of second-valley
switching is alternatively selected to maximize frequency
modulation. As depicted in Figure 35, the switching
frequency hops when the input voltage is high. The
internal timing diagram of AVS is described in Figure 36.
Figure 35. Switching Frequency Range
Figure 36. Alternating Valley Switching (AVS)
ts
max=21
μ
s
ts
max=21
μ
s
tB=15
μ
s
ts
tB=15
μ
s
ts
ts
IDS
IDS
IDS
IDS
IDS
IDS IDS
IDS
A
B
C
D
tW=6
μ
s
tB=15
μ
s
tB=15
μ
s
FSQ0765R Rev. 00
53kHz
67kHz
59kHz
Constant
frequency
Vin
Assume the resonant period is 2us
fs
s
μ
21
1
s
μ
15
1
s
μ
17
1
AVS trigger point
48kHz s19
1
μ
AVS region
CCM DCM
Variable frequency within limited range
DBCA
FSQ0765R Rev.00
1st or 2nd is dependent on GateX 2
2nd valley switching 1st valley switching
Vgate
GateX2
GateX2: Counting Vgate every 2 pulses independent on other signals .
One-shot
AVS
fixed
triggering
fixed fixed
de-triggering
tBtB
VDS tB
Vgate continued 2 pulses Vgate continued another 2 pulses
1st valley switching
tBtB
1st valley- 2nd valley frequency modulation.
Modulation frequency is approximately 17kHz.
Vgate continued 2 pulses
1st or 2nd is depend on GateX2
Synchronize
Synchronize
FSQ0765R Rev. 00
tB
triggering
fixed fixed fixed
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 17
PCB Layout Guide
Due to the combined scheme, FPS shows better noise
immunity than conventional PWM controller and
MOSFET discrete solution. Further more are internal
drain current sense eliminates the possibility of noise
generation caused by a sensing resistor. There are some
recommendations for PCB layout to enhance noise
immunity and suppress natural noise inevitable in power-
handling components.
There are typically two grounds in the conventional
SMPS: power ground and signal ground. The power
ground is the ground for primary input voltage and
power, while the signal ground is ground for PWM
controller. In FPS, those two grounds share the same
pin, GND. Normally the separate grounds do not share
the same trace and meet only at one point, the GND pin.
More, wider patterns for both grounds are good for large
currents by decreasing resistance.
Capacitors at the VCC and FB pins should be as close
as possible to the corresponding pins to avoid noise from
the switching device. Sometimes Mylar® or ceramic
capacitors with electrolytic for VCC are better for smooth
operation. The ground of these capacitors needs to
connect to the signal ground (not power ground).
The cathode of the snubber diode should be close to the
drain pin to minimize stray inductance. The Y-capacitor
between primary and secondary should be directly
connected to the power ground of DC link to maximize
surge immunity.
Because the voltage range of feedback and sync line is
small, it is affected by the noise of the drain pin. Those
traces should not draw across or close to the drain line.
When the heat sink is connected to the ground, it should
be connected to the power ground. If possible, avoid
using jumper wires for power ground and drain.
Mylar® is a registered trademark of DuPont Teijin Films.
Figure 37. Recommended PCB Layout
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 18
Package Dimensions
TO-220F-6L (Forming)
Figure 38. 6-Lead, TO-220 Package
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
MKT-TO220A06revB
FSQ0765RQ — Green-Mode Farichild Power Switch (FPS™) for Quasi-Resonant Operation
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ0765RQ Rev. 1.0.1 19