Sep.2000
SINKSENSOUT 2
OUT 1
TEMP
GND VCC
FO
TH
E2 C2E1 C1
RG
IN
CI
VNC CN1 SNR FNO VN1 VPC CP1 FPO
SPR VP1
SR
RREF
RFO
AMP
SINKSENSOUT 2
OUT 1
TEMP
GND VCC
FO
RG
IN
CI
SR
RFO
AMP
TERMINAL CODE
1. VN1
2. SNR
3. CN1
4. VNC
5. FNO
1. VP1
2. SPR
3. CP1
4. VPC
5. FPO
C
D
U
A
B
R
E
Q Q PN G
S NUTS - 3 TYP.
F
H
J
V
L
M
K K K
T - 4 TYP.
W SQ. PIN
(10 PLACES)
Xφ (2 PLACES)
Y
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Pow er
Circuit
uGate Drive Circuit
uProtection Logic
– Shor t Circuit
– Ov er Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM200DVA120 is a 1200V,
200 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 200 120
Dimensions Inches Millimeters
A 4.72 120.0
B 2.76 70.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 4.17±0.010 106.0±0.25
E 2.20±0.010 56.0±0.25
F 1.52 38.5
G 0.16 4.0
H 0.16 4.01
J 0.40 10.16
K 0.55 14.0
L 1.02 26.0
M 0.45 11.5
Dimensions Inches Millimeters
N 0.12 3.0
P 1.50 38.0
Q 0.98 25.0
R 0.37 9.3
S M6 Metric M6
T 0.26 Dia. Dia. 6.5
U 0.72 18.3
V 0.10 2.54
W 0.025 SQ 0.64 SQ
X 0.14 Dia. 3.5 Dia.
Y 1.10 28.0
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLA T-BASE TYPE
INSULATED PACKAGE
Outline Drawing and Circuit Diagram
Sep.2000
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M6 Mounting Screws — 3.92 ~ 5.88 N · m
Mounting Torque, M6 Main Terminal Screws — 3.92 ~ 5.88 N · m
Module Weight (Typical) — 510 Grams
Supply Voltage (Applied between C1-E2) VCC(surge) 1000 Volts
Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125°C Start) VCC(prot.) 800 Volts
Isolation Voltage (Main Ter minal to Baseplate, A C 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VP1-VPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between CP1-VPC, VN1-VNC)V
CIN 20 Volts
Fault Output Supply Voltage (Applied between FPO-VPC, FNO-VNC)V
FO 20 Volts
Fault Output Current (Sink Current at FPO, FNO T erminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 5V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC200 Amperes
Peak Collector Current, (TC = 25°C) ICP 400 Amperes
Collector Dissipation (TC = 25°C) PC962 Watts
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 240 — — Amperes
Short Circuit Current Delay Time toff(SC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Level 100 11 0 120 °C
(VD = 15V, Lower Arm) OTrReset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ Tj ≤ 125 °C) UVrReset Level — 12.5 — Volts
Circuit Current IDVD = 15V, VCIN = 5V, VN1-VNC —3748mA
VD = 15V, VCIN = 5V, V P1-VPC —3748mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) CP1-VPC, CN1-VNC 1.7 2.0 2.3 Volts
Fault Output Current IFO(H) VD = 15V, V FO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
SXR Terminal Output V oltage VSXR Tj ≤ 125°C, Rin = 6.8kΩ (SPR, SNR) 4.5 5.1 5.6 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLAT -BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current ICES VCE = VCES, VD = 15V, Tj = 25°C — — 1.0 mA
VCE = VCES, VD = 15V, Tj = 125°C — — 10.0 mA
FWDi Forward Voltage V EC -IC = 200A, V D = 15V, V CIN = 5V — 2.50 3.50 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, V CIN = 0V, I C = 200A, — 2.65 3.30 Volts
Pulsed, Tj = 25°C
VD = 15V, VCIN = 0V, I C = 200A, — 2.60 3.25 Volts
Pulsed, Tj = 125°C
Inductive Load Switching Times ton 0.4 0.9 2.3 µs
trr VD = 15V, VCIN = 0V ↔ 5V — 0.2 0.3 µs
tC(on) VCC = 600V, IC = 200A, — 0.4 1.0 µs
toff Tj = 125°C — 2.4 3.4 µs
tC(off) — 0.7 1.2 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.11 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 0.18 °C/Watt
Contact Thermal Resistance R th(c-f) Case to Fin Per Module, — — 0.081 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage V CC Applied across C1-E2 Terminals ≤ 800 Volts
VCE(surge) Applied across C1-E1, C2-E2 Terminals ≤ 1000 Volts
VDApplied between 15 ± 1.5 Volts
VP1-VPC, VN1-VNC
Input ON Voltage VCIN(on) Applied between ≤ 0.8 Volts
Input OFF Voltage VCIN(off) CP1-VPC, CN1-VNC ≥ 4.0 Volts
Arm Shoot-Through Blocking Time tdead For IPM's each Input Signal ≥ 3.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLA T-BASE TYPE
INSULATED PACKAGE
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0 100 200 300
1.0
0
VD = 15V
VCIN = 0V
2.0
3.0
CONTROL SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE,
VCE(SAT), (VOLTS)
COLLECTOR-EMITTER
SATURATON VOLTAGE CHARACTERISTICS
(TYPICAL)
0 131517
1.0
0
2.0
3.0
IC = 200A
VCIN = 0V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 102030
100
0
VD = 17V
13
Tj = 25oC
VCIN = 0V
200
300
15
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, ton, toff, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
101
101102103
100
10-1
ton
VCC = 600V
VD = 15V
Inductive Load
toff
Tj = 25°C
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, tc(on), tc(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
101
101102103
100
10-1
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
tc(on)
tc(off)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE)
SWITCHING LOSS
CHARACTERISTICS (TYPICAL)
103
101102103
101
102
100
PSW(off)
PSW(on)
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
PSW(off)
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY TIME, trr, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101102103
10-1
10-2
I
rr
trr
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
103
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
100102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
DIODE FORWARD CHARACTERISTICS
103
102
101
Tj = 25°C
Tj = 125°C
VD = 15V
VCIN = 15V
0 1.0 2.0 3.0 CARRIER FREQUENCY, fC, (kHz)
CIRCUIT CURRENT, ID, (mA)
CIRCUIT CURRENT VS.
CARRIER FREQUENCY
0 102030
50
0
VD = 15V
100
150
Tj = 25°C
Tj = 25°C
Tj = 125°C
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DVA120
FLA T-BASE TYPE
INSULATED PACKAGE
CONTROL SUPPLY VOLTAGE, VD, (VOLTS)
SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 1EV) = 1.0
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
0 131517
0.8
0
1.0
1.2 Tj = 25°C
JUNCTION TEMPERATURE, Tj, (°C)
SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25°C) = 1.0
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
20-60 100 180
0.8
0
1.0
1.2
VD = 15V
JUNCTION TEMPERATURE, Tj, (°C)
FAULT OUTPUT PULSE WIDTH TRIP LEVEL,
tFO (Tj = 25°C) = 1.0
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
20-60 100 180
0.8
0
1.0
1.2
VD = 15V
JUNCTION TEMPERATURE, Tj, (°C)
SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION,
TRIP RESET LEVEL, UVt, UVr, (VOLTS)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
20 100 180
11
0
13
15 VD = 15V
UVt
UVr
-60
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 10010 1
100
10-1
10-2
10-3 10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.11°C/W
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 10010 1
100
10-1
10-2
10-3 10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.18°C/W
