1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (8 for PMBFJ108).
1.3 Applications
Analog switches
Choppers and commutators
Audio amplifiers.
2. Pinning information
[1] Drain and source are interchangeable.
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 4 — 20 September 2011 Product data sheet
SOT23
Table 1. Pinning
Pin Description[1] Simplified outline Symbol
1drain
2source
3gate
12
3
sym053
1
23
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 2 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on an FR4 printed-circuit board.
6. Thermal characteristics
[1] Mounted on an FR4 printed-circuit board.
Table 2. Orderin g information
Type number Package
Name Description Version
PMBFJ108 - plastic surface mounted package; 3 leads SOT23
PMBFJ109
PMBFJ110
Table 3. Marking
Type number Marking code[1]
PMBFJ108 38*
PMBFJ109 39*
PMBFJ110 40*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 25 V
VGSO gate-source voltage - 25 V
VGDO gate-drain voltage - 25 V
IGforward gate current (DC) - 50 mA
Ptot total power dissipation Tamb = 25 C[1] -250mW
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
Table 5. Thermal characteris tics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 3 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
7. Static characteristics
8. Dynamic characteristics
[1] Test conditions for switching times are as follows:
VDD = 1.5 V, VGS =0VtoV
GSoff (all types);
VGSoff =12 V, RL= 100 (PMBFJ108);
VGSoff =7V, R
L=100(PMBFJ109);
VGSoff =5V, R
L=100(PMBFJ110).
Table 6. Static characteristics
Tj=25
C.
Symbol Parameter Conditions Min Typ Max Unit
IGSS gate-source leakage current VGS =15 V; VDS =0V - - 3nA
IDSX drain-source cut-off current VGS =10 V; VDS =5V - - 3 nA
IDSS drain-source leakage current
PMBFJ108 VGS =0V; V
DS =15V 80--mA
PMBFJ109 VGS =0V; V
DS =15V 40--mA
PMBFJ110 VGS =0V; V
DS =15V 10--mA
V(BR)GSS gate-source breakdown voltage IG=1A; VDS =0V - - 25 V
VGSoff gate-source cut-off voltage
PMBFJ108 ID=1A; VDS =5V 10 - 3V
PMBFJ109 ID=1A; VDS =5V 6- 2V
PMBFJ110 ID=1A; VDS =5V 4- 0.5 V
RDSon drain-source on-state resistance
PMBFJ108 VGS =0V; V
DS =0.1V - - 8
PMBFJ109 VGS =0V; V
DS =0.1V - - 12
PMBFJ110 VGS =0V; V
DS =0.1V - - 18
Table 7. Dynamic character istics
Tj = 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS =0V; V
GS =10 V; f = 1 MHz - 15 30 pF
VDS =0V; V
GS = 0 V; f = 1 MHz; Tamb =25C - 50 85 pF
Crss feedback capacitance VDS =0V; V
GS =10 V; f = 1 MHz - 8 15 pF
Switching times (see Figure 2)
tddelay time [1] -2-ns
ton turn-on time [1] -4-ns
tsstorage time [1] -4-ns
toff turn-off time [1] -6-ns
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 4 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
Fig 1. Switching circuit.
Fig 2. Input and output waveforms.
001aab288
50 Ω
R
L
DUT
10 μF
0.1 μF
V
DD
10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
001aab289
V
GS off
t
off
t
f
t
s
V
GS
= 0 V
V
i
V
o
10%
90%
90%
10%
t
on
t
r
t
d
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 5 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
9. Package outline
Fig 3. Package outline.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 6 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
10. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMBFJ108_109_110 v.4 20110920 Product data sheet - PMBFJ108_109_110 v.3
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
PMBFJ108_109_110 v.3
(9397 750 13401) 20040804 Product data sheet - PMBFJ108_109_110_C NV v. 2
PMBFJ108_109_110_CNV v.2 19971201 Product specification - -
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 7 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expr essly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminar y specification.
Product [short] dat a sheet Production This document contains the product specification.
PMBFJ108_109_110 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 8 of 9
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automo tive use. It i s neit her qualif ied nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims result ing from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 September 2011
Document identifier: PMBFJ108_109_110
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Contact information. . . . . . . . . . . . . . . . . . . . . . 8
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9