SCHOTTKY DIE SPECIFICATION TYPE: SB140S
40 V 1 A (5Standard □Low) VF，(5Single □Dual) Anode
SYM UNIT
VRRM Volt
IFAV Amp
VF MAX Volt
IR MAX mA
IFSM Amp
Tj ℃
TSTG ℃
Specifications apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM µm Mil
A 762 30.00
B 678 26.69
Thickness (Min) 280 11.02
Thickness (Max) 300 11.81
Thickness (Min) 190 7.48
Thickness (Max) 210 8.27
PS:
(1)Cutting street width is around 16µm (0.62mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
CDie
Wafer
Nonrepetitive Peak Surge Current
Top Metal Pad Size
Operating Junction Temperature
Storage Temperature
DICE OUTLINE DRAWING
ITEM
Die Size
32
125
-50 to +150
@ VR= 43 Volt, Ta=25℃
MAXIMUM RATINGS
0.100
@ 1 Ampere, Ta=25℃
Reverse current
0.520
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
DC Blocking Voltage @ IR=1mA 40
1
General Description:
ELECTRICAL CHARACTERISTICS
SB140S
Spec. Limit
B
A
C
P+ Guard Ring
Back-side Metal
Top-side Metal
S O Passivation
i2
