DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 * High transition frequency for excellent sensitivity in AM car radios PIN * High transfer admittance. APPLICATIONS DESCRIPTION 1 source 2 drain 3 gate * Pre-amplifiers in AM car radios. handbook, halfpage 2 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. d g s 3 Top view MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage - - 20 V VGSoff gate-source cut-off voltage -0.3 -0.8 -1.2 V IDSS drain-source current 10 - 25 mA Ptot total power dissipation - - 300 mW Ts 90 C yfs transfer admittance 35 45 - mS Tj junction temperature - - 150 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Jan 05 2 Philips Semiconductors Product specification N-channel junction FET BF862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 20 V VDG drain-gate voltage - 20 V VGS gate-source voltage - -20 V IDS drain-source current - 40 mA IG forward gate current - 10 mA Ptot total power dissipation - 300 mW Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Ts 90 C; note 1 Note 1. Main heat transfer is via the gate lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s Note 1. Soldering point of the gate lead. MCD808 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 40 80 120 Ts (C) 160 Fig.2 Power derating curve. 2000 Jan 05 3 note 1 VALUE UNIT 200 K/W Philips Semiconductors Product specification N-channel junction FET BF862 STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IGS = -1 A; VDS = 0 -20 - - V VGS gate-source forward voltage VDS = 0; IG = 1 mA - - 1 V VGSoff gate-source cut-off voltage VDS = 8 V; ID = 1 A -0.3 -0.8 -1.2 V IGSS reverse gate current VGS = -15 V; VDS = 0 - - -1 nA IDSS drain-source current VGS = 0; VDS = 8 V 10 - 25 mA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. common source forward transfer admittance gos common source output conductance Tj = 25 C - 180 400 S Ciss input capacitance f = 1 MHz - 10 - pF Crss reverse transfer capacitance f = 1 MHz - 1.9 - pF en equivalent noise input voltage f = 100 kHz - 0.8 - nV/Hz fT transition frequency - 715 - MHz 4 35 45 - UNIT yfs 2000 Jan 05 Tj = 25 C MIN. mS Philips Semiconductors Product specification N-channel junction FET BF862 MCD809 40 MCD810 300 handbook, halfpage handbook, halfpage IDSS gos (S) (mA) 30 200 20 100 10 0 -0.5 0 -1 VGSoff (V) 0 -1.5 0 10 20 IDSS (mA) 30 VDS = 8 V; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.4 Fig.3 Common-source output conductance as a function of drain saturation current; typical values. Drain saturation current as a function of gate-source cut-off voltage; typical values. MCD811 60 MCD812 60 handbook, halfpage handbook, halfpage yfs (mS) yfs (mS) 50 40 40 20 30 0 20 0 10 20 IDSS (mA) 30 0 10 VDS = 8 V; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.5 Fig.6 Forward transfer admittance as a function of drain saturation current; typical values. 2000 Jan 05 5 20 ID (mA) 30 Forward transfer admittance as a function of drain current; typical values. Philips Semiconductors Product specification N-channel junction FET BF862 MCD813 30 MCD814 20 handbook, halfpage handbook, halfpage VGS = 0 V ID (mA) ID (mA) 16 -0.1 V max 20 12 -0.2 V typ 8 -0.3 V 10 min -0.4 V 4 -0.5 V 0 -1 -0.8 -0.6 -0.4 0 -0.2 0 0 4 8 VGS (V) VDS = 8 V; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.7 Fig.8 Drain current as a function of gate-source voltage; typical values. MCD815 -104 handbook, halfpage ID = 20 mA MCD816 handbook, halfpage 1 mA C (pF) 0.1 mA -102 12 Drain current as a function of drain-source voltage; typical values. 12 10 mA IG (nA) VDS (V) 8 -1 -10-2 -10-4 Cis 4 IGSS Crs 0 5 10 15 0 -8 20 25 VDG (V) -6 -4 -2 VGS (V) 0 VDS = 8 V; f = 1 MHz; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.9 Fig.10 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. Gate current as a function of drain-gate voltage; typical values. 2000 Jan 05 6 Philips Semiconductors Product specification N-channel junction FET BF862 MCD817 102 handbook, halfpage MCD818 10 handbook, halfpage yis (mS) yrs yrs 10 rs (deg) (mS) bis 1 rs 1 -103 -102 10-1 gis 10-2 10-1 1 10 102 f (MHz) 10-1 10-1 103 1 10 102 f (MHz) -10 103 VDS = 8 V; VGS = 0; Tamb = 25 C. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C. Fig.11 Common-source input admittance as a function of frequency; typical values. Fig.12 Common-source reverse admittance as a function of frequency; typical values. MCD819 102 handbook, halfpage yos (mS) yfs fs (deg) yfs (mS) MCD820 102 handbook, halfpage -102 10 fs bos -10 10 1 gos 1 10-1 1 10 102 f (MHz) 10-1 10-1 -1 103 1 10 102 f (MHz) 103 VDS = 8 V; VGS = 0; Tamb = 25 C. VDS = 8 V; VGS = 0; Tamb = 25 C. Fig.13 Common-source forward transfer admittance as a function of frequency; typical values. 2000 Jan 05 Fig.14 Common-source output admittance as a function of frequency; typical values. 7 Philips Semiconductors Product specification N-channel junction FET BF862 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2000 Jan 05 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification N-channel junction FET BF862 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Jan 05 9 Philips Semiconductors Product specification N-channel junction FET BF862 NOTES 2000 Jan 05 10 Philips Semiconductors Product specification N-channel junction FET BF862 NOTES 2000 Jan 05 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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