NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Features GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested Standard package with bolt down flange RoHS* Compliant and 260C reflow compatible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. Functional Schematic The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC(R) process - a proprietary GaN-on-Silicon technology. 2 RFIN / VG RFOUT / VD 1 3 Flange Ordering Information Pin Configuration Part Number Package NPT2020 Bulk Quantity NPT2020-SMBPPR Custom Sample Board1 NPT2020-SMB2 1250-1850 MHz Sample Board 1. When ordering, specify application requirements (frequency, linearity, etc.) * Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange2 Ground / Source 2. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 RF Electrical Specifications: TA = 25 C, VDS = 48 V, IDQ = 350 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 3.5 GHz GSS - 14.5 - dB Saturated Output Power CW, 3.5 GHz PSAT - 48 - dBm Drain Efficiency at Saturation CW, 3.5 GHz SAT - 60 - % Power Gain 3.5 GHz, POUT = 50 W GP 12 13.5 - dB Drain Efficiency 3.5 GHz, POUT = 50 W 50 55 - % Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage DC Electrical Characteristics: TA = 25 C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 14 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 7 mA Gate Threshold Voltage VDS = 48 V, ID = 14 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = 48 V, ID = 350 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = 2 V, ID = 105 mA RON - 0.34 - Saturated Drain Current VDS = 7 V pulsed, pulse width 300 s ID,MAX - 8.2 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Absolute Maximum Ratings3,4,5 Parameter Absolute Maximum Drain Source Voltage, VDS 160 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 28 mA Junction Temperature, TJ +200C Operating Temperature -40C to +55C Storage Temperature -65C to +150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ 200C will ensure MTTF > 1 x 106 hours. Thermal Characteristics6 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 48 V, TJ = 200C RJC 2.1 C/W 6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25 C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency at PSAT (%) 2700 1.6 - j7.2 2.9 + j2.3 65 16.2 58 3100 1.5 - j8.6 2.9 + j0.6 64 16.1 55 3500 1.9 - j10.7 2.9 - j0.7 62 15.7 53 Impedance Reference ZS and ZL vs. Frequency ZL ZS Gain vs. Output Power Drain Efficiency vs. Output Power 19 60 2700 MHz 18 50 Drain Efficiency (%) Gain (dB) 17 16 15 14 2700 MHz 3100 MHz 13 3500 MHz 35 3500 MHz 40 30 20 10 12 11 30 3100 MHz 40 Output Power (dBm) 45 50 0 30 35 40 45 Output Power (dBm) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 3.5 GHz Narrowband Circuit VGS C1 1 F C2 C3 C4 0.1 F 0.01 F 1000 pF C11 4.7 pF C9 10 pF R1 24.9 C12 6.8 pF C10 12 pF RFIN C14 0.7 pF R2 0 C8 C7 1000 pF 0.01 F C6 0.1 F C5 1 F VDS C13 6.8 pF C16 3.3 pF NPT2020 C17 0.6 pF RFOUT C15 10 pF Description Parts measured on evaluation board (20-mil thick RO4350). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Bias Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (48 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 3.5 GHz Narrowband Circuit Parts list Reference Value Tolerance Manufacturer Part Number C1, C5 1 F 10% AVX 1210C105KAT2A C2, C6 0.1 F 10% Kemet C1206C104K1RACTU C3, C7 0.01 F 10% AVX 12061C103KAT2A C4, C8 1000 pF 10% Kemet C0805C102K1RACTU C9 10 pF 5% ATC ATC800B100JT500X C10 12 pF 5% ATC ATC800B120JT500X C11 4.7 pF +/- 0.1 pF ATC ATC800B4R7BT500X C12, C13 6.8 pF +/- 0.1 pF ATC ATC800B6R8BT500X C14 0.7 pF +/- 0.1 pF ATC ATC800B0R7BT500X C15 10 pF 5% ATC ATC800A100JT250X C16 3.3 pF +/- 0.1 pF ATC ATC800B3R3BT500X C17 0.6 pF +/- 0.1 pF ATC ATC800B0R6BT500X R1 24.9 1% Panasonic ERJ-6GEY24R9V R2 0 1% Panasonic ERJ-6ENF00R0V PCB Rogers RO4350, r = 3.5, 20 mil 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Typical Performance as Measured in the 3.5 GHz Evaluation Board: CW, VDS = 48 V, IDQ = 350 mA (unless noted) Drain Efficiency vs. Output Power over Temperature Gain vs. Output Power over Temperature 60 13 50 Drain Efficiency (%) 14 Gain (dB) 12 11 10 +25C -40C +55C 9 8 30 +25C -40C +55C 40 30 20 10 35 40 45 50 Output Power (dBm) 0 30 35 40 45 Output Power (dBm) Quiescent VGS vs. Temperature -1.05 175 mA 350 mA 525 mA -1.10 VGSQ (V) -1.15 -1.20 -1.25 -1.30 -1.35 -1.40 -50 -25 0 25 50 75 100 Temperature (C) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 50 NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Typical 2-Tone Performance as measured in the 3.5 GHz evaluation board: 1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25 C (unless noted) 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current -20 14.0 175mA 262mA 350mA 437mA 525mA -25 13.0 Gain (dB) IMD (dBc) -30 13.5 -35 -40 12.5 12.0 11.5 175mA 262mA 350mA 437mA 525mA 11.0 -45 10.5 -50 10.0 1 10 100 1 10 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -10 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -20 IMD (dBc) -30 -40 -50 -60 -70 1 10 100 POUT (W-PEP) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 100 NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 1250-1850 MHz Broadband Circuit VGS L1 27 nH C4 10 F C6 47 pF C5 47 pF C9 100 F C3 47 pF R1 110 C7 1 F C10 3.9 pF RFIN R2 0.33 C13 C1 0.2 pF 2.7 pF NPT2020 VDS C8 4.7 F C12 0.5 pF RFOUT C11 39 pF C2 27 pF Description Parts measured on evaluation board (25-mil thick 6010LM). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Bias Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (48 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 1250-1850 MHz Broadband Circuit Parts list Reference C1 C2 C3, C5, C6 C4 C7 C8 C9 C10 C11 C12 C13 L1 R1 R2 PCB Value 2.7 pF 27 pF 47pF 10uF-16V 1.0uF-100V 4.7uF 100uF-63V 3.9pF 39pF 0.5pF 0.2pF 27nH 110 Ohms 0.33 Ohms Tolerance +/- 0.1pF 5% 5% 5% 5% 5% 5% +/- 0.1pF 5% +/- 0.1pF +/- 0.1pF 5% 5% 5% Vendor ATC ATC ATC Digikey Digikey Digikey Panasonic ATC ATC ATC ATC Coilcraft Digikey Digikey Rogers 6010LM, r = 10.2, 25 mil Part Number ATC800B2R7BT500X ATC800B270JT500X ATC800B470JT500X C2012X5R1C106M085AC C12101C105KAT2A C5750X7R2A475K230KA ECE-V1JA101P ATC800B3R9BT500X ATC800B390JT500X ATC800B0R5BT500X ATC800A0R2BT250X 0908SQ-27N CR1206-JW-1100ELF ERJ-6RQFR33V 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 Typical Performance as Measured in the 1250-1850 MHz Evaluation Board: CW, VDS = 48 V, IDQ = 350 mA, TA = 25 C (unless noted) 70 20 60 15 50 10 40 Gain 5.0 Pout Drain Efficiency 30 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Drain Efficiency (%), Pout (W) 25 Gain & Drain Efficiency vs. Frequency (POUT = 50 W) 80 25 70 20 60 15 50 10 40 Frequency (GHz) 5.0 Pout Drain Efficiency 30 1.2 0.0 1.9 Gain 1.3 1.4 1.5 1.6 1.7 1.8 0.0 1.9 Frequency (GHz) 60 25 50 20 40 15 30 20 10 30 10 1850 MHz 1550 MHz 1250 MHz 35 Gain (dB) Drain Efficiency (%) Gain & Drain Efficiency vs. POUT 5 40 45 0 50 POUT (dBm) 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Gain (dB) 80 Gain (dB) Drain Efficiency (%), Pout (W) Gain & Drain Efficiency vs. Frequency (Max Power) NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 AC360B-2 Metal-Ceramic Package Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni / Au. 12 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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