MABC-001000-PB1PPR - M/A-Com Technology Solutions

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

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Features

 Robust GaN Protection at Any Power Up/Power

Down Sequence

 Fixed Gate Bias Voltage with Pulsed Drain Bias

Voltage. Add-On Module Allows for Gate Pulsing

 Open Drain Output Current of ≤ 200 mA for

External MOSFET Switch Drive

 Internal Thermistor or External Temperature

Sensor Voltage for Gate Bias Sum

 30 dB Typical EMI/RFI Rejection at All I/O Ports

 6.60 x 22.48 mm2 Package with 1 mm Pitch SMT

Leads

 Target ≤ 500 ns Total Switch Transition Time

 Gate Bias Output Current ≤ 50 mA for Heavy RF

Compression

 RoHS* Compliant and 260°C Reflow Compatible

Description

The MABC-001000-DP000L is a bias controller that

provides proper gate voltage and pulsed drain

voltage biasing for a device under test (DUT).

Applicable DUT’s would be depletion-mode GaN

(Gallium Nitride) or GaAs (Gallium Arsenide) power

amplifiers or HEMT devices.

The module also provides bias sequencing so that

pulsed drain voltage cannot be applied to a DUT

unless the negative gate bias voltage is present.

The applications section of this datasheet will show

how the module can be implemented for the

following two applications:

 Application Option 1: Fixed negative gate

biasing with pulsed drain biasing.

 Application Option 2: Pulsed negative gate

biasing with pulsed drain biasing.

Both of these applications will recommend the

external circuitry and p-Channel Power MOSFET.

The MABC-001000-DP000L module can also be

installed onto an MABC-001000-PB1PPR evaluation

board for evaluation, test, and characterization

purposes.

Ordering Information2

Part Number Packaging

MABC-001000-DP000L Tray

MABC-001000-DP00TL Tape & Reel

MABC-001000-PB1PPR Gate and Drain Pulsing

Evaluation Board

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

Pin No.

Label

Function

1 GFB Gate Voltage (-) Feedback

2 NC No Connect

3 GCO Gate Voltage (-) Control Output

4 GCI Gate Voltage (-) Control Input

5 VGS Gate (-) Supply Voltage

6 NC No Connect

7 GND Ground

8 VDS Drain (+) Supply Voltage

9 SWG Driver Output to MOS Switch Gate

10 NC No Connect

11 P4V Auxiliary +4.3 VDC Output

12 ENS MOS Switch Enable TTL

13 GND Ground

14 GND Ground

Pin Configuration1

2. Reference Application Note M513 for reel size information.

1. Unused package pins must be left open and not connected to

ground.

Functional Schematic

1314

V_REG

GFB

GCO

GCI

VGS

ENS

P4V

SWG

VDS

NC GND

GND GND

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Electrical Characteristics: TA = 25°C

Symbol Parameter Conditions Min Typ Max Unit

VDS Supply Voltage, Positive 10 50 70 V

IDS Supply Current, Positive - 14 - mA

VGS Supply Voltage, Negative -8 -6 0 V

IGS Supply Current, Negative - -3 - mA

VENL ENS Input Voltage, Low 0 0 0.3 V

VENH ENS Input Voltage, High 2 3.3 4.3 V

IENS ENS Input Current - 40 - uA

VGTH Input, Gate Feedback Threshold to VGS - 2.7 - V

VDTH Input, Drain Feedback Threshold - 65% VDS - V

VGC Output Voltage, Pulsed/Fixed Gate -8 -3.5 0 V

VGCR Output Voltage, Pulsed/Fixed Gate Ripple

(Peak-to-peak) - 50 - mV

IGC Output Gate Current, Peak - 50 - mA

ROFF Output Drive, Open Drain, OFF State

VDS = 50 V

Temp. = +85°C

- 4M - Ω

RON Output Drive, Open Drain, ON State - 1.2 - Ω

ION Output Drive, Current, ON State - 100 200 mA

Absolute Maximum Ratings

Parameter Min. Max.

Supply (+) Voltage, VDS 0 V +60 V

Supply (-) Voltage, VGS -10 V 0 V

Logic Voltage, ENS, GSE -0.3 V +4.5

Analog (-) Voltage, GCI, GFB -10 V 0 V

Switch Driver Voltage, SWG 0 V +75 V

Switch Driver Sink Current, SWG - -200 mA

Lead Soldering Temp (10 s) - +260°C

Operating Temperature -40°C +85°C

Storage Temperature -65°C +150°C

Recommended Operating Conditions

Parameter Typical

Supply (+) Voltage, VDS +12 V to +55 V

Supply (-) Voltage, VGS -8 V to -2 V

Logic Voltage, ENS 0 V to +4.3 V

Analog (-) Voltage, GCI, GFB -8 V to -2 V

Switch Driver Sink Current, SWG -1 mA to -200 mA

Operating Temperature -40°C to +85°C

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Timing Diagrams

TTL

VDS

VGS

+5V

+50V

-3V

-8V

90%

PULSE ENABLE FOR

tD1 D2

RISE1 FALL1

FALL2

10%

90%

10%

RISE2

10%

90%

10%

+50V

VOD

GATE & DRAIN SWITCH

OPEN DRAIN OUTPUT

MOSFET SWITCH OUTPUT

PULSED GATE OUTPUT

RF OUTPUT

Symbol Parameter Conditions Min Typ Max Unit

tD1 Open Drain ON Propagation Delay3

RPULL-UP = 700 Ω

VDS = 50 V

IR = 71 mA avg.

Switch Disconnected

- 100 - ns

tD3 Open Drain OFF Propagation Delay3 - 70 - ns

tRISE1 Open Drain Rise Time4 - 115 - ns

tFALL1 Open Drain Fall Time4 - 60 - ns

tD1 MOS Switch ON Propagation Delay3,5 - 300 - ns

VDS = 50 V

MOS CISS = 2780 pF

RDS,ON = 60 mΩ

tD3 MOS Switch OFF Propagation Delay3,5 - 1.8 - µs

tRISE1 MOS Switch Rise Time4,5 - 400 - ns

tFALL1 MOS Switch Fall Time4,5 - 80 - µs

tD2 Gate Bias ON Propagation Delay3,5 - 100 - ns

tD4 Gate Bias OFF Propagation Delay3,5 - 200 - ns

tRISE2 Gate Bias Rise Time4,5 - 500 - ns

tFALL2 Gate Bias Fall Time4,5 - 400 - ns

3. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.

4. Rise and fall times are measured between 10% and 90% of the steady state signal.

5. Parameter was measured with MABC-001000-PB1PPR sample board. MAGX-L21214-650L00 was used as the DUT.

Timing Characteristics: TA = 25°C

ENS

SWG

VDD (Q1)6

GCO

6. Q1 refers to an external p-Channel HEXFET that pulses the drain of the DUT. See Applications Section for more information.

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Applications Section

Functional Description

The MABC-001000-DP000L GaN Bias Controller/

Sequencer Module circuitry provides proper

sequencing and generation of the gate voltage and

pulsed drain voltage for a device under test (DUT).

Reference the Product View and Pin Configuration

table on page 1. The basic functions of the circuits

within the module are described as follows:

 Overhead Voltages for the Circuits within the

MABC-001000-DP000L Module

○ Pin 8 (VDS) is the Drain (+) Supply Voltage

that provides the input voltage to a low drop-

out linear regulator (VREG). This supplies

the positive voltage for the circuits within the

module. It also provides the Auxiliary

+4.3 V Output to Pin 11 (P4V).

○ Pin 5 (VGS) is the Gate (-) Supply Voltage

that is also used to supply the negative

voltage for the circuits within the module.

 Negative Gate Voltage for the Device Under

Test (DUT)

○ A voltage follower op-amp circuit provides a

low impedance output to Pin 3 (GCO) Gate

Voltage (-) Control Output. Pin 3 (GCO)

output is applied to the gate terminal of a

DUT as shown in Figure 1 on page 5.

○ The reference voltage for the voltage

follower is provided by the Pin 4 (GCI) Gate

Voltage (-) Analog Input. This input

reference voltage is developed by an

external potentiometer/ resistive divider

circuit as shown in Figure 1 on page 6. It is

recommended to use the -8 V to -3 V

voltage that is also applied to Pin 5 (VGS).

○ Reference: The external potentiometer is

adjusted to set the gate voltage Pin 3 (GCO)

to the DUT. Alternative voltage inputs such

as a temperature compensation circuit or a

Digital-to-Analog (DAC) converter could also

be supplied to Pin 4 (GCI).

 Pin 9 (SWG) MOS Switch Driver Output

○ An N-Channel MOSFET develops the

pulsed signal (SWG) to drive the

resistive divider network for the gate of an

external p-Channel HEXFET as shown in

Figure 1 on page 5. The input signal for the

internal MOSFET is provided by the output

from the sequencing circuits.

 Sequencing Circuits

○ A voltage comparator circuit senses if the

negative gate voltage is present as an input

on Pin 1 (GFB) - Gate Voltage (-) Feedback.

○ A logic circuit provides the switched input

enable signal for the N-Channel MOSFET.

The following 3 signals must be at correct

levels to generate the enable logic

signal:

 Pin 12 (ENS) MOS Switch Enable TTL

 Negative gate voltage (GFB) is present

 The internal positive voltage output is

present from V_REG

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Applications Section

Part

Value MFG

MFG P/N

R1 2.7 kΩ Panasonic ERJ-2GEJ272X

R2,R3 1.02 kΩ Vishay CRCW25121K02FKEGHP

R4,R5 402 Ω Vishay CRCW2512402RFKEG

VR1 10 kΩ Bourns 3224W-1-103E

Q1 P-Channel

MOSFET IR IRF5210SPBF

Application Option 1:

Fixed Negative Gate Biasing with Pulsed

Drain Biasing

Figure 1 shows a block diagram of the

MABC-001000-DP000L module with the

recommended external components to support this

application option. See Table 1 for component

recommendations and values.

Figure 1. Fixed Gate/Pulsed Drain Biasing

Module Layout Guidelines

Reference the Product View, Pin Configuration

Table on page 1, and the Recommended Landing

Pattern on page 7.

The following recommendations should be followed

when the MABC-001000-DP000L module is used to

bias a high-power RF device or amplifier. The input

and output locations were determined so that the

layout and signal routing could be optimized when

interfacing with a high-power amplifier

assembly.

 The negative gate voltage input and outputs are

located on the left side of the module and should

be located as close as possible to the gate bias

pad s on the high-power amplif ier

assembly.

 The positive pulsed voltages are located on the

right side of the module and should be located

as close as possible to the external MOSFET

switch. The MOSFET switch drain should be

located as close as possible to the drain bias

pads on the high-power amplifier assembly. The

charge storage capacitors should be

located as close as possible to the MOSFET

switch source terminal pads.

 The module ground pads are located at Pins 7,

13, and 14.

 Route all signal lines and ground returns to be

as short as possible and implement a ground

plane on the back of the printed wiring board

(PWB) if that option is available to the

designer. Following these layout criteria will

minimize circuit parasitics that degrade the

performance of the pulsed signal.

Table 1. Recommended Parts List for Fixed

Gate/Pulsed Drain Biasing

RFIN RFOUT

MABC-001000-

DP000L

DUT

+50 V

-8 V

TTL

CSTORAGE

VR1

COUT

CIN

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Applications Section

Figure 2. Pulsed Gate/Pulsed Drain Biasing:

(a) North Biasing; (b) South Biasing

Figure 3. Populated MABC-001000-PB1PPR

Evaluation Board

Figure 4. MABC-001000-PB1PPR with

MABC-001000-DP000L Mounted

(a) (b)

Application Option 2:

Pulsed Negative Gate Biasing with

Pulsed Drain Biasing

A block diagram showing a typical application of

the MABC-001000-PB1PPR sample board is

shown in Figure 2 below. Figures 3 and 4 show

layouts of the MABC-001000-PB1PPR sample

board with/without the MABC-001000-DP000L

module installed.

The additional external circuitry on the

MABC-001000-PB1PPR sample board provides

the added capability of pulsed gate biasing. A full

schematic, layout, and bill of materials are

available upon request.

RFIN RFOUT

MABC-001000-

PB1PPR

DUT

+50 V -8 V

TTL

VD_PULSED

VG_B

VDD TTL -8V RFIN RFOUT

MABC-001000-

PB1PPR

DUT

+50 V-8 V TTL

VD_PULSEDVG_A

VDDTTL

-8V

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Physical Dimensions6,7,8

Recommended Landing Pattern6 Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

This module is sensitive to electrostatic discharge

(ESD) and can be damaged by static electricity.

Proper ESD control techniques should be used

when handling these HBM class 1B devices.

7. All dimensions are in inches.

8. Reference Application Note M538 for lead-free solder reflow

recommendations.

9. Plating is 100% Sn over BeCu.

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +12 to +55 V

Rev. V2

MABC-001000-DP000L

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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assumes no responsibility for errors or omissions in these materials. MACOM may make changes to

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the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future

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