Internal Circuit
T
erminal No.
Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3
t
mm
v
6
±0.375
6
t
mm
v
10
±0.45
10
t
mm
v
18
±0.55
18
t
mm
v
30
±0.65
Unless otherwise specified, the
tolerances are as shown below
.
A
K
C
E
Two,
C0.2
1±
0.1 dia.
1±
0.1 dia.
(see note)
(see note)
Surface A
Note: These dimensions are for the sur-
face
A.
Other lead wire pitch dimen
-
sions
are for the case surface.
206
Photomicrosensor
(Reflective)
EE-SY169
Dimensions
Note: All
units are in millimeters unless otherwise indicated.
Features
•High-quality
model with plastic lenses.
•Highly precise sensing range with a tolerance of ±0.6 mm
horizontally
and vertically
.
•
With a red LED sensing dyestuf
f-type inks.
•
Limited reflective model.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Rated
value
Emitter Forward
current
IF
40 mA
(see note 1)
Pulse forward
current IFP
300 mA
(see note 2)
Reverse voltage
VR
3 V
Detector Collector–Emitter
voltage VCEO
30 V
Emitter–Collector
voltage VECO ---
Collector current
IC
20 mA
Collector
dissipation PC
100 mW
(see note 1)
Ambient
temperature Operating Topr 0°
C to 70
°C
Storage Tstg –20°
C to
80°C
Soldering temperature
Tsol 260°C
(see note 3)
Note: 1. Refer
to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The
pulse width is 10
µ
s maximum with a frequency
of
100 Hz.
3.
Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Item Symbol Value Condition
Emitter Forward
voltage
VF
1.85 V typ., 2.3 V max.
IF
= 20 mA
Reverse current
IR
0.01
µ
A typ., 10
µ
A max.
VR
= 3 V
Peak emission wavelength
λP
660 nm typ.
IF
= 20 mA
Detector
Light current
IL
160
µ
A min., 2,000
µ
A max.
IF
= 20 mA, V
CE
= 5 V
White paper with a reflection ratio
of 90%, d = 4 mm (see note)
Dark current ID
2 nA typ., 200 nA max.
VCE
= 5 V
, 0
ȏx
Leakage current
ILEAK
2
µ
A max.
IF
= 20 mA, V
CE
= 5 V with no
reflection
Collector–Emitter saturated
voltage VCE (sat) --- ---
Peak spectral sensitivity
wavelength λP
850 nm typ.
VCE
= 5 V
Rising time
tr
30
µs typ. VCC
= 5 V
, RL
= 1 k
Ω
, I
L
= 1 mA
Falling time
tf
30
µs typ. VCC
= 5 V
, RL
= 1 k
Ω
, I
L
= 1 mA
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.