2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547B (Z) 3rd. Edition Jun. 1998 Features * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -50 A -200 A -50 A -50 A 214 mJ Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP * 1 3 EAR* 3 2 Channel dissipation Pch* 75 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Ta = 25C, Rg 50 , L=100H 2 2SJ505(L), 2SJ505(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.017 0.022 I D = -25A, VGS = -10V*1 resistance RDS(on) -- 0.024 0.036 I D = -25A, VGS = -4V*1 Forward transfer admittance |yfs| 27 39 -- S I D = 25A, VDS = 10V*1 Input capacitance Ciss -- 4100 -- pF VDS = -10V Output capacitance Coss -- 2100 -- pF VGS = 0 Reverse transfer capacitance Crss -- 450 -- pF f = 1MHz Turn-on delay time t d(on) -- 32 -- ns VGS = -10V, ID = -10A Rise time tr -- 225 -- ns RL = 3 Turn-off delay time t d(off) -- 530 -- ns Fall time tf -- 330 -- ns Body to drain diode forward voltage VDF -- -1.1 -- V I F = -50A, VGS = 0 Body to drain diode reverse recovery time t rr -- 110 -- ns I F = -50A, VGS = 0 diF/ dt = 50A/s Note: 1. Pulse test 3 2SJ505(L), 2SJ505(S) Main Characteristics Power vs. Temperature Derating -1000 I D (A) 40 20 -3 -1 PW Op = er -10 10 at ion Operation in this area is limited by R DS(on) 100 150 Ta = 25 C -0.1 -0.1 -0.3 -1 200 ms (1 c= sh ot) (T 25 C ) -3.5 V -40 -3 V -20 -80 -60 V DS = -10 V Pulse Test -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) -100 V DS (V) 25 C -40 -20 75 C VGS = -2.5 V 0 -30 -10 Typical Transfer Characteristics -100 (A) -60 -3 Drain to Source Voltage Tc (C) ID 50 -10 V Typical Output Characteristics -100 -4.5 V Pulse Test -5 V -8 V -80 -4 V I D (A) DC -30 -0.3 Case Temperature 4 10 0 s s 1 m s 10 -100 Drain Current 60 0 Drain Current Maximum Safe Operation Area -300 Drain Current Channel Dissipation Pch (W) 80 Tc = -25 C 0 -1 -2 -3 Gate to Source Voltage -4 V GS (V) -5 2SJ505(L), 2SJ505(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -1.6 -1.2 I D = -50 A -0.8 -20 A -10 A -0.4 -5 A 0 -4 -8 -12 Gate to Source Voltage Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) ( ) Pulse Test -16 -20 V GS = -4 V -10 A 20 10 0 -40 -50 A V GS = -10 V 40 80 Case Temperature -10 V 10 5 2 Pulse Test 1 120 Tc (C) -10 -3 -30 Drain Current -10,-20A 0 VGS = -4 V 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test I D = -50 A -20 A 40 30 50 -1 160 100 Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) -2 Static Drain to Source on State Resistance vs. Drain Current 100 -100 -300 -1000 I D (A) Forward Transfer Admittance vs. Drain Current Tc = -25 C 30 25 C 10 3 75 C 1 0.3 V DS = -10 V Pulse Test 0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain Current I D (A) 5 2SJ505(L), 2SJ505(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 20000 Capacitance C (pF) 50000 200 100 50 10 -0.1 -0.3 -10 -3 -1 Reverse Drain Current -30 V DS 80 120 Qg (nc) -20 200 V GS (V) -4 -16 160 -20 -30 -40 -50 Switching Characteristics -12 V DD = -50 V -25 V -10 V -10 Drain to Source Voltage V DS (V) -8 V GS 40 Crss 0 Gate to Source Voltage V DS (V) Drain to Source Voltage I D = -50 A Gate Charge 6 500 I DR (A) V DD = -50 V -25 V -10 V -80 Coss 1000 -100 0 -60 -100 0 2000 200 Dynamic Input Characteristics -20 Ciss 100 0 -40 5000 di / dt = 50 A / s VGS = 0, Ta = 25 C 20 VGS = 0 f = 1 MHz 10000 1000 t d(off) 500 Switching Time t (ns) Reverse Recovery Time trr (ns) 1000 tf 200 tr 100 50 20 10 -0.1 -0.3 t d(on) V GS = -10 V, V DD = -30 V PW = 10 s, duty < =1% -1 -3 Drain Current -10 -30 I D (A) -100 2SJ505(L), 2SJ505(S) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current I DR (A) -100 Pulse Test -80 -60 -40 -5 V V GS = 0 -10 V -20 0 -0.4 -0.8 -1.2 Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage -1.6 -2.0 V SD (V) 250 I AP = -50 A V DD = -25 V duty < 0.1 % Rg > 50 200 150 100 50 0 25 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50 0 VDD 7 2SJ505(L), 2SJ505(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m Vout Monitor 10 PW (S) Waveforms Switching Time Test Circuit Vin Monitor 1 Vin 10% D.U.T. RL 90% Vin -10 V 50 V DD = -30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ505(L), 2SJ505(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SJ505(L), 2SJ505(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SJ505(L), 2SJ505(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SJ505(L), 2SJ505(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12