DATA SH EET
Product specification
Supersedes data of 1997 Mar 26 2001 Nov 14
DISCRETE SEMICONDUCTORS
BGX885N
860 MHz, 17 dB gain push-pull
amplifier
b
ook, halfpage
M3D248
2001 Nov 14 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
The BGX885N is a hybrid amplifier module designed for
CATV/MATVsystemsoperatingoverafrequencyrangeof
40 to 860 MHz at a voltage supply of 24 V (DC).
PINNING - SOT115D
Note
1. Pins 1 and 9 carry DC voltages.
PIN DESCRIPTION
1 input; note 1
2, 3 common
4 60 mA supply terminal
5, 6, 7 common
8+V
B
9 output; note 1
handbook, halfpage
789
246
351
Side view
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 16.5 17.5 dB
f = 750 MHz 17.3 dB
Itot total current consumption (DC) VB=24V 240 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBDC supply voltage 26 V
ViRF input voltage 65 dBmV
Tstg storage temperature 40 +100 °C
Tmb operating mounting base temperature 20 +100 °C
2001 Nov 14 3
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb =30°C; ZS=Z
L=75
Notes
1. Decrease per octave of 1.5 dB.
2. fp= 349.25 MHz; Vp=V
o= 59 dBmV;
fq= 403.25 MHz; Vq=V
o
;
measured at fp+f
q= 752.5 MHz.
3. Measured according to DIN45004B:
fp= 341.25 MHz; Vp=V
o
;
f
q= 348.25 MHz; Vq=V
o6 dB;
fr= 350.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 339.25 MHz.
4. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=V
o
;
f
q= 858.25 MHz; Vq=V
o6 dB;
fr= 860.25 MHz; Vr=V
o6 dB;
measured at fp+f
qf
r= 849.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 50 MHz 16.5 17.5 dB
f = 750 MHz 17.3 dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.4 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.3 dB
s11 input return losses f = 40 MHz; note 1 20 dB
f = 800 to 860 MHz 10 dB
s22 output return losses f = 40 MHz; note 1 20 dB
f = 640 to 860 MHz 15 dB
d2second order distortion note 2 −−53 dB
Vooutput voltage dim =60 dB; note 3 61 dBmV
dim =60 dB; note 4 60 dBmV
NF noise figure f = 50 MHz 7.5 dB
f = 350 MHz 7.5 dB
f = 550 MHz 7.5 dB
f = 650 MHz 7.5 dB
f = 750 MHz 8dB
f = 860 MHz 8dB
I
tot total current consumption (DC) note 5 240 mA
2001 Nov 14 4
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
List of components (see Fig.2)
COMPONENT DESCRIPTION VALUE
C1, C3, C4 ceramic multilayer capacitor 1 nF (max.)
C2 ceramic multilayer capacitor 1 nF
R resistor 200 Ω, 1W
Fig.2 Test circuit.
Pins 1 and 9 carry DC voltages.
handbook, full pagewidth
MGC591
RC2
C3
C1
input
12 V
BGX885N
C4
output
987654321
VB= 24 V
2001 Nov 14 5
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4
q2
10.2 4.2 44.75 8 0.25 0.1 3.8
bF
P
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115D
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D
D
U1q
q1
b
F
S
A
Z
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
564
PyMB
yMB
1
B
d
max.
97-04-10
q2yMB
2001 Nov 14 6
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 14 7
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613518/05/pp8 Date of release: 2001 Nov 14 Document order number: 9397 750 08814