PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3905
2N3906
TO-92
CBE
General Pur
ose Switchin
And Am
lifier A
lications
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNITS
Collector -Emitter Voltage VCEO 40 V
Collector -Base Voltage VCBO 40 V
Emitter -Base Voltage VEBO 5.0 V
Collector Current Continuous IC 200 mA
Power Dissipation Ta=25 degC PD 625 mW
Derate Above 25deg C 5.0 mW/deg C
Power Dissipation Tc=25 degC PD 1.5 W
Derate Above 25deg C 12 mW/deg C
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 125 deg C/W
Junction to Ambient Rth(j-a) 200 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N3905 2N3906 UNITS
Collector -Emitter Voltage VCEO IC=1mA,IB=0 >40 >40 V
Collector -Base Voltage VCBO IC=10uA.IE=0 >40 >40 V
Emitter-Base Voltage VEBO IE=10uA, IC=0 >5.0 >5.0 V
Collector-Cut off Current ICEX VCE=30V, VEB=3V <50 <50 nA
Base-Cut off Current IBL VCE=30V, VEB=3V <50 <50 nA
DC Current Gain hFE* IC=0.1mA,VCE=1V >30 >60
IC=1mA,VCE=1V >40 >80
IC=10mA,VCE=1V 50-150 100-300
IC=50mA,VCE=1V >30 >60
IC=100mA,VCE=1V >15 >30
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA <0.25 <0.25 V
IC=50mA,IB=5mA <0.4 <0.4 V
Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA 0.65-0.85 0.65-0.85 V
IC=50mA,IB=5mA <0.95 <0.95 V
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
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