Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/95
PRELIMINARYPRELIMINARYPRELIMINARYPRELIMINARYPRELIMINARY
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
30W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
D1211UK-P
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 12/95
PRELIMINARYPRELIMINARYPRELIMINARYPRELIMINARYPRELIMINARY
Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 0 ID= 10mA
VDS = 12.5V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 1A
PO= 10W
VDS = 12.5V IDQ = 0.4A
f = 500MHz
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
40
1
1
0.5 7
0.8
10
50
20:1 60
40
4
RTHj–case Thermal Resistance Junction – Case Max. 6°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300
m
s , Duty Cycle
£
2%
D1211UK-P
