PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 500MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 30W 40V 20V 10A -65 to 150C 200C Prelim. 12/95 PR EL IM INA RY D1211UK-P ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Drain-Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 1 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 1A 0.8 S GPS Common Source Power Gain PO = 10W 10 dB Drain Efficiency VDS = 12.5V 50 % VSWR Load Mismatch Tolerance f = 500MHz 20:1 -- BVDSS IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.4A Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = -5V f = 1MHz 40 V 60 pF f = 1MHz 40 pF f = 1MHz 4 pF Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA RTHj-case Semelab plc. Thermal Resistance Junction - Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Max. 6C / W Prelim. 12/95