Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
1075MP
75 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 250 Watts Pk
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 6.5 Amps Pk
Maximum Temperatures
Storage Temperature - 65 to + 150oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
POUT Power Out F= 1025-1150 MHz 75 W
PIN Power Input Vcc = 50 Volts 13 W
PG Power Gain PW = 10 µsec, DF = 1% 7.6 8.5 dB
ηc Efficiency 40 %
VSWR1 Load Mismatch Tolerance F = 1090 MHz 20:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 15mA 65 V
Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20
Cob Output Capacitance Vcb = 50 V, f = 1 MHz 12 pF
θjc1 Thermal Resistance 0.6 oC/W
Note 1: At rated pulse conditions
Rev A: Dec 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
