MR820 - Motorola / Freescale Semiconductor

~~~~v]]j~]jj:,~-)J~~ $;~~: ,#J>{j#:,L LE,J,b jtib~w,.. :-w

r.7 <,;.?- I1.1-T~: m

Ffls’.r R::G(3’\!ER~f !~’Q’?J[E[:! F]:2CT; F[ :Fs

. . designed for special applications such as dc power supplies,

inverters, converters, ultrasonic systems, choppers, low RF interfer-

ence and free wheeling diodes. Acomplete line of fast recovery

rectifiers having typical recovery time of ‘100 nanoseconds providing

high efficiency at frequencies to 250 kHz.

Designer’s Data for “Worst Case” Conditions

The DesignersA Data sheets Derrnit the desiqn of most circuits entirelv from the in- .

~- -+

formation p;esented. Limit curves –representing boundaries on device characteris-

tics –are given to fac[l(tate worst case” design.

.,..‘

IRating ISymbol

MR8Z0 IMR821 iMR822 \MR824 I~,R,~Z&’

——

--——

,Peak Repetitive Reverse Voltage l—~

v~R~fl I\j-.–

100 ~200

.’~~

Working Peak Reverse Voltage IVRWM 50

iDCBlocking Voltage

400 .~, j4~@

_J:—v5._

!Non-Repetitive Peak Reverse —&--l–=fi~’650

~VRSKI i75 I

Operating and Storage Junction ~TJTstg j~ ~~ .-65 10+175 _

., . ..

Temperature Ranqe (2) ,\.&tAik.,s$

Unit

——

volts

———

volts

Amp

——

Amp

——

.:,f\:

I/VI R820 Il-i -10.51mAl

Charaderistic +Ll –% .Typ ~Max /““ii ]

_—— _

Reverse Recoverv Time ‘rr

in~

(IF =l.OAmp to VR =30 Vdc, Fig.re251

(IFM =15 Amp, di/dt =25 A/vs, Figure 21j)

——— 1

Reverse Recoverv Current

r:T- &-?3

jIRM(REC) i

(IF =l. OAmpto VR =30 Vdc, Figure 25:

——

(1) MU*7 be derated for re”erse oower dissi,,a?.ion. See Note 3

(2) Derate as shown i“ Figure 1.

ATrad emark of Motorola Inc.

——-—-—.

0234 o&5

T‘+”--”

0.025

0.246 0055 0035

I—r

*0.1]5

0175

10.115

——

0.135

0990

1010

LCASE 194

l—

FAE[;HANI!CAL CHARACTERISTICS

CASE: Void Free, Transfer Molded

FIIVISH: External Surfaces are Cor-

rosion Resistant

F)OL.AR 17rY: Indicated by Diode

Symbol

\VEIGHT: 2.5 Grams (Approximately)

ltiAXIMUM LEAD TEMPERATURE

I:OR SOLDERING PURPOSES:

350°C, 3/8” from case for 10 s

at 5.0 lb. tension.

__~ @MOTOROLA INC 1972

MAXIMUM CURRENT AND TEMPERATURE RATINGS

~. 100 — — — — — —I\

c3oo~~

80 4odc~ ~

60 80 100 200 300 400 600

VR, PEAK REVERSE VOLTAGE (VOLTS)

NOTE 1

MAXIMUM JUNCTION TEMPERATURE DE RATING

When operating this rectifier at junction temperatures

over approximately 85°C, reverse power dissipation’$$

..,, *2

and the possibility of thermal runaway must be Q@~~:<i

},*

sidered. The data of Figure 1is based upon worstq~sb,.++

reverse power and should be used to derate.$J~>#$”

from its maximum value of 175°C. Seel&*@’J?or

additional information on derating for@@ rsRv@bwer

TA, AMBIENT TEMPERATURE (oC)

TA, AMBIENT TEMPERATURE (°C)

zwxI \

~_400 v

—20 40 60 80 100 120 140 160 18[

TA, AMBIENT TEMPERATURE (°C)

MAXIMUM CURRENT RATINGS

~- NOTE 2‘--—~

Current derating data is bawd uDon the thermal resDonse data of FiQure 29 a!ld the forward Dower dissioa-

~-_

tion data of F~ures 19 and 20. Since reverse powe; dissipation is no; consider(~~ ir~ Figures 6‘thr” 11, ad’di -

-___.~

tional derating for reverse voltage and for juncrion to ambient thermal resistance rlust be applled. See Note 3.

SINE WtiVE INPUT SLQLIAREWAVE iNPUT

-. -..-,,-

,-,,

,-.:,+,.,~:~_-.=::,

,:.c,-~-- -$“=,-, -:- ;,.,,; ~.-.-:.]:~

-. ,”--- .._ —.-. x

“:’ =’:, ,,::,7 :“~,,;:; ‘-~~

., . .. ... .d.-, :

~20

;‘$‘ ‘ $i

RESISTIVE. INDUCTIVE

~LOAOS

+BOTH L2ADS TO HEAT

$16 .—SINK WITH LEN GTIHS

mAS SHO’NN

5L=1/8,, -–—

g12 —

a1/4” ———

:8.0

u318” <

u518*L \

z4.0

—o75 85 95 105 115 125 135 145 -155 165 175

TL, LEAO TISMPERATURE (°C)

20 40 60 80 100 120 143 i60 I80

TA, AM81ENT “TEMPERATURE (DC)

TI., LEAD TEMF’ERATURE (DC)

TA, Ah181ENT Tl:MPERATURE (°C)

——

REVERSE POWER DISSIPATION AND CURRENT

NOTE 3Ie”rwhe” Vp IS the line tol, ”e.oltage .cro~the rect!flers. For

DE RATING FOR REVERSE POWER DISSIPATION capac,ttveioads, II )s recommended that thedc case on Figure 13

be used, regardless of Input waveform, for brtdge clrc” its. For

Inthlsrectifler, power loss due to reverse .urrentisgenerallv not

neg[,gcb le. For reliable circ” It deszgn, the max, m.m j“ncrlon capacitively loaded full wave center-tapped clrcu!~s. the 20.1

temperature must be Ihm!ted to either 175°Cor the temperature data of Ftq. re 12 should be used for sane wave ,np”t. and the

capac, t,”e load data of F,gure 13sho”ld be used for square wave

which results lnthermalc. naway. Proper derat, ng may beaccom- nnp”ts regardless of l(p~)ll (a.). For these two .ases. ~’P IS the

plish ed by .seofeq” ation 1orequat$on 2. “oltage a.ross one leg of the transformer.

Eq”atlon 1TA ‘T1 -(175 -TJ(ma. )) -PB ROJA EXAMPLE

Where. T1 =Ma., mum Allowable Ambte”t Tempera?”re

“eglecti”g re”erse power d,ss, patio” (from F,gures Find Maximum Ambient Temperature for 1A” =2A, Cap.c!t,.e

loorll) Load of IPKIIA” =20, Input Voltage =120 V(rms) Sine Wave,

TJ(max) =Maximum AllOwable Junction Tempera- R9JA =Z5°C1W, Half Wave Circu>t.

t.re to prevent thermal r“nawav or 175°C, wh,ch Solution 1

ever is lower, (See F19. re 1)Step 1. F!nd Vp; Vp =fi Vin =169 V, VR[pk) =338 V

PR =Reverse Power D,s.lpatio” (Fcom F!g”re 12 Step 2: Fnd TJ(maxI from F,gure 1. Read TJ(ma.I =119°C.

or 13, adjusted for TJIm8. )as show. below) Step 3: Find PR(m..) fcom FiQ”re12. Read PR =770mW@140°C

ROJA =Thermal Resistance, Junction to Amb, e.t, Step4. F!nd IR normalized from F,g. re 14. Read lR(norm) =0.4

Step 5Correct PR to TJ[max) PR =lRI.orm) .PR [Figure 12}

When thermal reslsrance, j.ncr, on to amb(ent, IS o“er 20 °ClW, PR=O.4x770=310mW. \::J

the effect of thermal response IS negligible. Satisfactory derating Step 6Find PF from Fgure 19 Read PF =24 W. ~*:*

may be fo. ”d by “sing Step 7: Compute TA from TA =TJ(max I(PR +PF) ROJA YJ;,,T

.,,::J .,,!.

Equat, on 2TA =TJ[max) -(PR +P=) R@JA TA =119-10.31+2.4)(25) :*,.,..

“’” ‘.::4} t’.;’.

TA =51°C .~+,:~

PF =Forward Power Diss, patio” [see F19.re, lg &20) ~,,,.,. }..;

SO!utl On 2““/ii::>.,41

Other Terms defined above. <;i-. ,,

1..:

Steps 1thru 5are as above ,,]i,,,, .,

The reverse power given on Figures 12 and 13 is calculated for ,,i ,. ,...i~~.

TJ =150°C. When TJ is lower, PR <W(IIdecrease, IIS v.I”e can be Step 6Find TA =TI from F19.re 10. Read,T~.,~$1, ~?~.

found by multlplv, ng PR bv the normalized re”erse current from Step 7Compute TA from TA =TI (175$3fi4~X~}) PR ROJA

Figure 14 at the temperature of interest TA =115- (lW~,i:Y’19~-(0,31) (25)

~A= ~ ,0c :., \3:& ,t,\’:,

The re”erse powt!r data IS .alc”lated for half wave rect!f, catton t~,;.... ,X-J

,<&,\> :...,:.~~

circuits. For full wane rectification .slng either abridge or aAt times, adiscrepancy beween ~$~vd WIII occur because

center-tapped transformer, the data for reslst,ve loads IS eq.lva- Ihermal response is factored i;,~.,~ol”th~ 2.

,, ,$

*+..**YP.*

2000

1000

700

500

300

II/“

‘CAPACITIVE

LOADS /

Ila

W+,,*--- ““

.= 100 F/ Y~! ! ! , , ,11,

v’ /! [ 11

70 MAXIMUM ~

1, —— I

50 ‘—— TYPICAL I1[I

o100 200 300 400 500 600 700

Vp, PEAK APPLIED VOLTAGE (VOLTS)

020 40 60 80 100 120 140 160 180 200

TJ,JUNCTION TEtlPERATURE (°C) VR, REVERSE VDLTAGE (VDLTS)

STATIC CHARACTERISTICS

4oo~ [II–-—1 I,

.,-.,----- ,..,.,-, ,_ ...””. \,m. fi..,, .m Ill

0.7

:- 1.0

0.5 -1.5 ;

‘bE ‘‘‘-‘- - - i- - - - - :

—-2.0

0.3 i~ -2.5

0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.3 0.5 1.0 ;.0 3.0 5.0 10 20 30 50 100 200300

0.21 mI I II

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20

IF(AV), AVERAGE FORWARD CURRENT (AhlP) IF(AV), AVERAGE FCRWARD CURRENT (AMP)

TYPICAL RECOVERED STORED CHARGE DATA

(See Note 4)

1.0 1i11I I 1t111 1 [11I

IIIII[I I 1I I I I [ 1

2.0

1.0

0.5

&, ,

11I[111 1 I{[11 1 1,.

II I Ml

I I I I I I Ill IFM=20A. IM

lfl A[

IIIII I I I II IFM= 20A

! ! ! ! I!!!!

0.2

0.1

0.05

~= 0.02

0.01 0.02

1.0 2.0 5.0 10 20 50 ““” 50

—

100

[100

I I I I I I IL

100 I.u 20 5.0 10 20

dl/dt (AM P/Ps)

NOTE 4

.,.,

...

<,..! .,,* +

$:<,~>:i;$~~~*;,:.’

Reverse recover,~ t~e~s the period which elapses from the

time that the cur~n?~t~u apreviously forward biased rectifier di/dt

..,,, ‘..,-. i(t)

diode, pessas thrq<~~ going negatively until the reverse current 1~~

recovers to,a’~~~Which is less than 107. peak reverse current.

Rever@;”y}e~S~ry time is adirect function of the forward

currey@~~~{r@ the application of reverse volta9e.

~~{~~~,given rectifier, recovery time is very circuit depend-

e~i~,N~&ical and maximum recovery time of all Motorola fast 1~~(~~~)

re~~q power rectifiers are rated under afixed set of conditions

.’,.>.,

usI&g IF =1.0 A, VR =30 V. In order to cover all circuit

conditions, curves are given for typical recovered stored charge From stored charge curves versus di/dt, recovery time (trr)

versus mmmutation di/dt for various levels of forward current and peak reverse recovery CUrrent (IRM (REC) )can be CIOSely

and for junction temperatures of 25°C, 75°C, 100° C, and

15o”c. approximated using the following formulas:

To use these curves, it is necessary to know the forward [1

QR 112

current level just before commutation, the circuit commutation ‘rr =1.41X —

di/dt, and the operating junction temperature. The reverse re- dildt

covery test current waveform for aII Motorola fast recovery

rectifiers is shown. IRM(REC) =1.41 x[QR xdi/dt] “2

4SLO.BL3

FUSI:

30 V[lc

CONSTANT VOI.TAGE

S“PP’’’A--

IF, FORW/Al?D CURRENT (AMP)

100 1.0 2.0 !1.0 10 20 50 100

NOTE 5

To determine maximum junction temperature of the diode

in agiven situation, the following procedure is recommended:

The temperature of the lead should be measured using a

thermocouple placed on the lead as close as possible to the tie

point. The thermal mass connected to the tie point is normally

large enough so that it will not significantly respond to heat

surges generated in the diode as aresult of pulsed operation once

steady-state conditions are achieved. Using the measured value

of TL, the junction temperature may be determined by:

TJ=TL+ATJL ,,<tl~:

where ATJL is the increase in junction temperature above the

lead temperature. It may be determined by: ,:*$.,,,

~:’’”, \’f\

aTJL =Ppk .R@JL [D +(1 -D) or(tl +tp) +r(tp),{~$~~~~~~~!;o

where r(t) =normalized value of transient thermal r$#4~@hq~ at

*iJ\::s., ?,..,s~

time tfrom Figure 29, i.e.: ‘$,*’!!.*f.

,., ‘.,}..a~,

,.:~,?,,>s...\

r(tl +tp) =b~$ta nce at

normalized value of transient therw,a~,~.

‘.!}$,,,~$~.

time t, +tp. ,,.~. ,,

~k ~:~~ii~it$speakfan

pt,q “ME eq’*yale#square POwerpulse.

~1,7~*,+*~,i\l::<r:~..

.,:.* .$.,:*.

....

... t..+

L, LEAO LENGTH (INCHES)

t, TIME (ins)

i<~~$.U<# of the above model permits junction to lead thermal

,.,~~~<fance for any mounting configuration to be found. Lowest

.’$~$ues occur when one side of the rectifier is brought as close as

:..possible to the heat sink as shown below. Terms in the model

signify:

T* =Ambient Temperature R@s =Thermal Resistance, Heat

sink to Ambient

TL =Lead Temperature R@L =Thermal Resistance, Lead

to Heat Sink

TC =Case Temperature R6J =Thermal Resistance, Junc-

tion to Case

TJ =Junction Temperature PD =Power Dissipation =PF +

PF =Forward Power Dissipation

PR =Reverse Power Dissipation

(Subscripts Aand Krefer to anode and cathode sides respectiveiv)

Values for thermal resistance components are:

RO L=40 °C/W/l N. Typically and 44 °CfW/1 NMaximum.

ReJ =2°C/W Typically and 4°C/W Maximum.

Since ROJ is so low, measurements of the case temperature,

Tc, will be approximately equal to junction temperature in prac-

tical lead mounted applications. When used as a 60 Hz rectifier,

the slow thermal response holds TJ(pK) close to TJ(AV) ,There-

fore maximum lead temperature may be found as follows:

TL =TJ(max) -ATJL

where

ATJL can be approximated as follows:

ATJL ~ReJL .PD; PO is the sum of forward and

reverse power dissipation shown in Figures 12 &19 for

sine wave operation and Figures 13 &20 for square

wave operation.

The recommended method of mounting to aP.C. board is

shown on the sketch, where ReJA is approximately 25°C/W for

a1-1/2” x1-1/2” copper surface area. Values of 40°C/W are

tVPical fOr mounting to terminal strips or P.C. boards where avail-

able surface area is small.

w— —

I~c ,0,,,,,0””,,,,”,~~

Recommended wo”nting for half wave circuit

❑OX 20912 *PHOENIX, ARIZONA 85036 9 ASUBSIDIARY OF MOTOROLA INC.

6??3 PRINTED IN U5A 12-71 IMPERIAL LITHO 826073 12>,4 D8 6073