1
®
80V, 1.25A Peak Current H-Bridge
FET Driver
The HIP4082 is a medium frequency, medium voltage
H-Bridge N-Channel MOSFET driver IC, available in 16 lead
plastic SOIC (N) and DIP packages.
Specifically targeted for PWM motor control and UPS
applications, bridge based designs are made simple and
flexible with the HIP4082 H-bridge driver. With operation up
to 80V, the device is best suited to applications of moderate
power levels.
Similar to the HIP4081, it has a flexible input protocol for
driving every possible switch combination except those
which would cause a shoot-through condition. The
HIP4082’s reduced drive current allows smaller packaging
and it has a much wider range of programmable dead times
(0.1 to 4.5µs) making it ideal for switching frequencies up to
200kHz. The HIP4082 does not contain an internal charge
pump, but does incorporate non-latching level-shift
translation control of the upper drive circuits.
This set of features and specifications is optimized for
applications where size and cost are important. For
applications needing higher drive capability the HIP4080A
and HIP4081A are recommended.
Features
Independently Drives 4 N-Channel FET in Half Bridge or
Full Bridge Configurations
Bootstrap Supply Max Voltage to 95VDC
Drives 1000pF Load in Free Air at 50°C with Rise and Fall
Times of Typically 15ns
User-Programmable Dead Time (0.1 to 4.5µs)
DIS (Disable) Overrides Input Control and Refreshes
Bootstrap Capacitor when Pulled Low
Input Logic Thresholds Compatible with 5V to 15V Logic
Levels
Shoot-Through Protection
Undervoltage Protection
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
UPS Systems
DC Motor Controls
Full Bridge Power Supplies
Switching Power Amplifiers
Noise Cancellation Systems
Battery Powered Vehicles
Peripherals
Medium/Large Voice Coil Motors
Related Literature
- TB363, Guidelines for Handling and Processing
Moisture Sensitive Surface Mount Devices (SMDs)
Pinout
HIP4082
(PDIP, SOIC)
TOP VIEW
Ordering Information
PART
NUMBER
PART
MARKING
TEMP.
RANGE (°C) PACKAGE
PKG.
DWG. #
HIP4082IB* HIP4082IB -55 to +125 16 Ld SOIC (N) M16.15
HIP4082IBZ*
(Note)
4082IBZ -55 to +125 16 Ld SOIC (N)
(Pb-free)
M16.15
HIP4082IP HIP4082IP -55 to +125 16 Ld PDIP E16.3
HIP4082IPZ
(Note)
HIP4082IPZ -55 to +125 16 Ld PDIP**
(Pb-free)
E16.3
*Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of IPC/
JEDEC J STD-020.
**Pb-free PDIPs can be used for through hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
BHB
BHI
BLI
ALI
DEL
VSS
DIS
AHI
BHO
BLO
ALO
VDD
AHS
AHO
AHB
BHS
January 3, 2006
HIP4082
Data Sheet FN3676.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Harris Corporation 1995. Copyright Intersil Americas Inc. 2003-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
2FN3676.4
January 3, 2006
HIP4082
Application Block Diagram
Functional Block Diagram
80V
GND
LOAD
HIP4082
GND
12V
AHI
ALI
BLI
BHI BLO
BHS
BHO
ALO
AHS
AHO
3
8
2
7
4
12
5
6
TURN-ON
DELAY
DRIVER
13
LEVEL
SHIFT
DRIVER
AHB
AHS
9
10
11
14
15
16
1
DRIVER
TURN-ON
DELAY
DRIVER
TURN-ON
DELAY
LEVEL
SHIFT
AHO
BHB
BHS
BHO
ALO BLO
TURN-ON
DELAY
UNDERVOLTAGE
DETECTOR
VDD
BHI
AHI
DIS
ALI
VDD
DEL
BLI
VSS
U/V U/V
3FN3676.4
January 3, 2006
Typical Application (PWM Mode Switching)
80V
12V
12V
DIS
GND
GND
TO OPTIONAL
CURRENT CONTROLLER OR
PWM
LOAD
INPUT
+
-
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
BHB
BHI
BLI
ALI
DEL
VSS
DIS
AHI
BHO
BLO
ALO
VDD
AHS
AHO
AHB
BHS
OVERCURRENT LATCH
RDIS
DELAY RESISTOR
FROM
OPTIONAL
OVERCURRENT
LATCH
RSH
HIP4082
4FN3676.4
January 3, 2006
Absolute Maximum Ratings Thermal Information
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V
Voltage on AHS, BHS . . . . . -6V (Transient) to 80V (25°C to 150°C)
Voltage on AHS, BHS . . . . . -6V (Transient) to 70V (-55°C to150°C)
Voltage on AHB, BHB . . . . . . . . VAHS, BHS -0.3V to VAHS, BHS +VDD
Voltage on ALO, BLO. . . . . . . . . . . . . . . . . . VSS -0.3V to VDD +0.3V
Voltage on AHO, BHO . . . VAHS, BHS -0.3V to VAHB, BHB +0.3V Input
Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5mA to 0mA
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
NOTE: All voltages are relative VSS unless otherwise specified.
Thermal Resistance θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . See Curve
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Max. Junction Temperature. . . . . . . . . . . . . . . . . . +150°C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C
(For SOIC - Lead Tips Only))
Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +8.5V to +15V
Voltage on VSS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +1.0V
Voltage on AHB, BHB . . . . . . . . VAHS, BHS +7.5V to VAHS, BHS +VDD
Input Current, DEL . . . . . . . . . . . . . . . . . . . . . . . . . -4mA to -100µA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K
PARAMETER SYMBOL TEST CONDITIONS
TJ = +25°C
TJ = -55°C
TO +150°C
UNITSMIN TYP MAX MIN MAX
SUPPLY CURRENTS & UNDER VOLTAGE PROTECTION
VDD Quiescent Current IDD All inputs = 0V, RDEL = 100K 1.2 2.3 3.5 0.85 4 mA
All inputs = 0V, RDEL = 10K 2.2 4.0 5.5 1.9 6.0 mA
VDD Operating Current IDDO f = 50kHz, no load 1.5 2.6 4.0 1.1 4.2 mA
50kHz, no load, RDEL = 10k2.5 4.0 6.4 2.1 6.6 mA
AHB, BHB Off Quiescent Current IAHBL, IBHBL AHI = BHI = 0V 0.5 1.0 1.5 0.4 1.6 mA
AHB, BHB On Quiescent Current IAHBH, IBHBH AHI = BHI = VDD 65 145 240 40 250 µA
AHB, BHB Operating Current IAHBO, IBHBO f = 50kHz, CL = 1000pF .65 1.1 1.8 .45 2.0 mA
AHS, BHS Leakage Current IHLK VAHS = VBHS = 80V
VAHB = VBHB = 96
VDD = Not Connected
--1.0--µA
VDD Rising Undervoltage Threshold VDDUV+ 6.8 7.6 8.25 6.5 8.5 V
VDD Falling Undervoltage Threshold VDDUV- 6.5 7.1 7.8 6.25 8.1 V
Undervoltage Hysteresis UVHYS 0.17 0.4 0.75 0.15 0.90 V
AHB, BHB Undervoltage Threshold VHBUV Referenced to AHS & BHS 5 6.0 7 4.5 7.5 V
INPUT PINS: ALI, BLI, AHI, BHI, & DIS
Low Level Input Voltage VIL Full Operating Conditions - - 1.0 - 0.8 V
High Level Input Voltage VIH Full Operating Conditions 2.5 - - 2.7 V
Input Voltage Hysteresis -35- - - mV
Low Level Input Current IIL VIN = 0V, Full Operating Conditions -145 -100 -60 -150 -50 µA
High Level Input Current IIH VIN = 5V, Full Operating Conditions -1 - +1 -10 +10 µA
TURN-ON DELAY PIN DEL
Dead Time TDEAD RDEL = 100K 2.5 4.5 8.0 2.0 8.5 µs
RDEL = 10K 0.27 0.5 0.75 0.2 0.85 µs
HIP4082
5FN3676.4
January 3, 2006
GATE DRIVER OUTPUT PINS: ALO, BLO, AHO, & BHO
Low Level Output Voltage VOL IOUT = 50mA 0.65 1.1 0.5 1.2 V
High Level Output Voltage VDD-VOH IOUT = -50mA 0.7 1.2 0.5 1.3 V
Peak Pullup Current IO+V
OUT = 0V 1.1 1.4 2.5 0.85 2.75 A
Peak Pulldown Current IO-V
OUT = 12V 1.0 1.3 2.3 0.75 2.5 A
Switching Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL= 100K, CL = 1000pF.
PARAMETER SYMBOL TEST CONDITIONS
TJ = +25°C
TJ = -55°C TO
+150°C
UNITSMIN TYP MAX MIN MAX
Lower Turn-off Propagation Delay
(ALI-ALO, BLI-BLO)
TLPHL - 25 50 - 70 ns
Upper Turn-off Propagation Delay
(AHI-AHO, BHI-BHO)
THPHL - 55 80 - 100 ns
Lower Turn-on Propagation Delay
(ALI-ALO, BLI-BLO)
TLPLH - 40 85 - 100 ns
Upper Turn-on Propagation Delay
(AHI-AHO, BHI-BHO)
THPLH - 75 110 - 150 ns
Rise Time TR-920-25ns
Fall Time TF-920-25ns
Minimum Input Pulse Width TPWIN-ON/OFF 50 - - 50 - ns
Output Pulse Response to 50 ns Input Pulse TPWOUT 63 80 ns
Disable Turn-off Propagation Delay
(DIS - Lower Outputs)
TDISLOW - 50 80 - 90 ns
Disable Turn-off Propagation Delay
(DIS - Upper Outputs)
TDISHIGH - 75 100 - 125 ns
Disable Turn-on Propagation Delay
(DIS - ALO & BLO)
TDLPLH - 40 70 - 100 ns
Disable Turn-on Propagation Delay
(DIS- AHO & BHO)
TDHPLH RDEL = 10K - 1.2 2 - 3 µs
Refresh Pulse Width (ALO & BLO) TREF-PW 375 580 900 350 950 ns
TRUTH TABLE
INPUT OUTPUT
ALI, BLI AHI, BHI VDDUV VHBUV DIS ALO, BLO AHO, BHO
XXXX1 0 0
XX1XX 0 0
0X010 0 0
1X0X0 1 0
01000 0 1
00000 0 0
NOTE: X signifies that input can be either a “1” or “0”.
Electrical Specifications VDD = VAHB = VBHB = 12V, VSS = VAHS = VBHS = 0V, RDEL = 100K (Continued)
PARAMETER SYMBOL TEST CONDITIONS
TJ = +25°C
TJ = -55°C
TO +150°C
UNITSMIN TYP MAX MIN MAX
HIP4082
6FN3676.4
January 3, 2006
HIP4082
Pin Descriptions
PIN
NUMBER SYMBOL DESCRIPTION
1 BHB B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap
diode and positive side of bootstrap capacitor to this pin.
2 BHI B High-side Input. Logic level input that controls BHO driver (Pin 16). BLI (Pin 3) high level input overrides BHI high
level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides BHI high level
input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD).
3 BLI B Low-side Input. Logic level input that controls BLO driver (Pin 14). If BHI (Pin 2) is driven high or not connected
externally then BLI controls both BLO and BHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin
8) high level input overrides BLI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than
VDD).
4 ALI A Low-side Input. Logic level input that controls ALO driver (Pin 13). If AHI (Pin 7) is driven high or not connected
externally then ALI controls both ALO and AHO drivers, with dead time set by delay currents at DEL (Pin 5). DIS (Pin
8) high level input overrides ALI high level input. The pin can be driven by signal levels of 0V to 15V (no greater than
VDD).
5 DEL Turn-on DELay. Connect resistor from this pin to VSS to set timing current that defines the dead time between drivers.
All drivers turn-off with no adjustable delay, so the DEL resistor guarantees no shoot-through by delaying the turn-on
of all drivers. The voltage across the DEL resistor is approximately Vdd -2V.
6V
SS Chip negative supply, generally will be ground.
7 AHI A High-side Input. Logic level input that controls AHO driver (Pin 10). ALI (Pin 4) high level input overrides AHI high
level input to prevent half-bridge shoot-through, see Truth Table. DIS (Pin 8) high level input overrides AHI high level
input. The pin can be driven by signal levels of 0V to 15V (no greater than VDD).
8 DIS DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When
DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of 0V to 15V (no
greater than VDD).
9 AHB A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of bootstrap
diode and positive side of bootstrap capacitor to this pin.
10 AHO A High-side Output. Connect to gate of A High-side power MOSFET.
11 AHS A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
12 VDD Positive supply to control logic and lower gate drivers. De-couple this pin to VSS (Pin 6).
13 ALO A Low-side Output. Connect to gate of A Low-side power MOSFET.
14 BLO B Low-side Output. Connect to gate of B Low-side power MOSFET.
15 BHS B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of bootstrap
capacitor to this pin.
16 BHO B High-side Output. Connect to gate of B High-side power MOSFET.
HIP4082
7FN3676.4
January 3, 2006
HIP4082
Timing Diagrams
FIGURE 1. INDEPENDENT MODE
FIGURE 2. BISTATE MODE
FIGURE 3. DISABLE FUNCTION
DIS=0
XLI
XHI
XLO
XHO
TLPHL THPHL
THPLH TLPLH TR
(10% - 90%)
TF
(10% - 90%)
X = A OR B, A AND B HALVES OF BRIDGE CONTROLLER ARE INDEPENDENT
and UV
DIS=0
XLI
XHI = HI OR NOT CONNECTED
XLO
XHO
and UV
DIS or UV
XLI
XHI
XLO
XHO
TDLPLH TDIS
TDHPLH
TREF-PW
HIP4082
8FN3676.4
January 3, 2006
HIP4082
Performance Curves
FIGURE 4. IDD SUPPLY CURRENT vs TEMPERATURE AND
VDD SUPPLY VOLTAGE
FIGURE 5. VDD SUPPLY CURRENT vs TEMPERATURE AND
SWITCHING FREQUENCY (1000pF LOAD)
FIGURE 6. FLOATING (IXHB) BIAS CURRENT vs
FREQUENCY AND LOAD
FIGURE 7. GATE SOURCE/SINK PEAK CURRENT vs BIAS
SUPPLY VOLTAGE AT 25°C
FIGURE 8. GATE CURRENT vs TEMPERATURE,
NORMALIZED TO 25°C
FIGURE 9. VDD-VOH vs BIAS VOLTAGE TEMPERATURE
-60 -40 -20 020 40 60 80 100 120 140
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
JUNCTION TEMPERATURE (°C)
IDD SUPPLY CURRENT (mA)
VDD = 16V
VDD = 15V
VDD = 12V
VDD = 10V
VDD = 8V
-60 -40 -20 020 40 60 80 100 120 140
4
5
6
7
8
9
10
11
12
13
14
15
16
JUNCTION TEMPERATURE (°C)
IDD SUPPLY CURRENT (mA)
200kHz
100kHz
50kHz
10kHz
050 100 150 200
0
1
2
3
4
5
6
7
8
FREQUENCY (kHz)
LOADED, NL BIAS CURRENTS (mA)
1000pF LOAD
NO LOAD
8 9 10 11 12 13 14 15
0.5
0.75
1
1.25
1.5
1.75
BIAS SUPPLY VOLTAGE (V) AT 25°C
PEAK GATE CURRENT (A)
1.925
0.815
ISRC(BIAS)
ISNK(BIAS)
BIAS
2
815
SOURCE
SINK
-75 -50 -25 025 50 75 100 125 150
0.8
0.9
1
1.1
1.2
JUNCTION TEMPERATURE (°C)
NORMALIZED GATE
SINK/SOURCE CURRENT (A)
8 9 10 11 12 13 14 15
0.6
1
1.4
VDD SUPPLY VOLTAGE (V)
VDD-VOH (V)
1.2
0.8
-55°C
-40°C0°C
25°C
125°C150°C
9FN3676.4
January 3, 2006
HIP4082
FIGURE 10. VOL vs BIAS VOLTAGE AND TEMPERATURE FIGURE 11. UNDERVOLTAGE TRIP VOLTAGES vs
TEMPERATURE
FIGURE 12. UPPER LOWER TURN-ON/TURN-OFF
PROPAGATION DELAY vs TEMPERATURE
FIGURE 13. UPPER/LOWER DIS(ABLE) TO TURN-ON/OFF vs
TEMPERATURE (°C)
FIGURE 14. FULL BRIDGE LEVEL-SHIFT CURRENT vs
FREQUENCY (kHz)
FIGURE 15. MAXIMUM POWER DISSIPATION vs AMBIENT
TEMPERATURE
Performance Curves (Continued)
8 9 10 11 12 13 14
1.4
VDD SUPPLY VOLTAGE (V)
VOL (V)
15
1.2
0.8
0.6
-55°C-40°C0°C25°C
125°C
150°C
1
-60 -40 -20 020 40 60 80 100 120 140 160
5
5.5
6
6.5
7
7.5
8
JUNCTION TEMPERATURE (°C)
VDD, BIAS SUPPLY VOLTAGE (V)
LOWER U/ V RESET
LOWER U/V SET
UPPER U/V SET/RESET
-60 -40 -20 020 40 60 80 100 120 140 160
20
30
40
50
60
70
80
90
100
JUNCTION TEMPERATURE (°C)
PROPAGATION DELAYS (ns)
UPPER tON
UPPER tOFF
LOWER tON
LOWER tOFF
-60 -40 -20 020 40 60 80 100 120 140 160
10
100
104
JUNCTION TEMPERATURE (°C)
DIS TO TURN-ON/OFF TIME (ns)
1000
DISHTON
DISHTOFF
DISLTON DISLOFF
020 40 60 80 100
0.5
1
1.5
2
SWITCHING FREQUENCY (kHz)
LEVEL-SHIFT CURRENT (mA)
-60 -30 030 60 90 120 150
0
0.5
1
1.5
2
2.5
AMBIENT TEMPERATURE (°C)
TOTAL POWER DISSIPATION (W)
SOIC
16 PIN DIP
QUIESCENT BIAS COMPONENT
10 FN3676.4
January 3, 2006
HIP4082
FIGURE 16. DEAD-TIME vs DEL RESISTANCE AND BIAS
SUPPLY (VDD) VOLTAGE
FIGURE 17. MAXIMUM OPERATING PEAK AHS/BHS
VOLTAGE vs TEMPERATURE
Performance Curves (Continued)
010 20 30 40 50 60 70 80 90 100
100
1000
104
DEAD TIME RESISTANCE (k)
DEAD TIME (ns)
VDD = 12V
VDD = 9V
VDD = 15V
100 50 050 100 150
70
75
80
85
90
TEMPERATURE (°C)
VXHS-VSS
11 FN3676.4
January 3, 2006
HIP4082
Dual-In-Line Plastic Packages (PDIP)
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated in JE-
DEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E and are measured with the leads constrained to be perpendic-
ular to datum .
7. eB and eC are measured at the lead tips with the leads unconstrained.
eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
eA-C-
C
L
E
eA
C
eB
eC
-B-
E1
INDEX 12 3 N/2
N
AREA
SEATING
BASE
PLANE
PLANE
-C-
D1
B1
B
e
D
D1
A
A2
L
A1
-A-
0.010 (0.25) C AMBS
E16.3 (JEDEC MS-001-BB ISSUE D)
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A-0.210 -5.33 4
A1 0.015 -0.39 -4
A2 0.115 0.195 2.93 4.95 -
B0.014 0.022 0.356 0.558 -
B1 0.045 0.070 1.15 1.77 8, 10
C0.008 0.014 0.204 0.355 -
D0.735 0.775 18.66 19.68 5
D1 0.005 -0.13 -5
E0.300 0.325 7.62 8.25 6
E1 0.240 0.280 6.10 7.11 5
e 0.100 BSC 2.54 BSC -
eA0.300 BSC 7.62 BSC 6
eB-0.430 -10.92 7
L0.115 0.150 2.93 3.81 4
N16 169
Rev. 0 12/93
12
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN3676.4
January 3, 2006
HIP4082HIP4082
Small Outline Plastic Packages (SOIC)
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
INDEX
AREA
E
D
N
123
-B-
0.25(0.010) C AMBS
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45°
C
H0.25(0.010) BM M
α
M16.15 (JEDEC MS-012-AC ISSUE C)
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.0532 0.0688 1.35 1.75 -
A1 0.0040 0.0098 0.10 0.25 -
B 0.013 0.020 0.33 0.51 9
C 0.0075 0.0098 0.19 0.25 -
D 0.3859 0.3937 9.80 10.00 3
E 0.1497 0.1574 3.80 4.00 4
e 0.050 BSC 1.27 BSC -
H 0.2284 0.2440 5.80 6.20 -
h 0.0099 0.0196 0.25 0.50 5
L 0.016 0.050 0.40 1.27 6
N16 167
α -
Rev. 1 6/05