CCD image sensor
S9037/S9038 series
High-speed operation, back-thinned FFT-CCD
www.hamamatsu.com 1
The S9037/S9038 series FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip ampli-
fi er having a wide bandwidth is used to an image sensor, a pixel rate of 10 MHz can be obtained. The S9037/S9038 series
image sensors also deliver a high line scan rate equivalent to interline CCD sensors when used in line binning operation
mode, because they have an active area pixel format where the number of vertical pixels is less than the number of horizon-
tal pixels. This makes the S9037/S9038 series suitable for line scan cameras.
The S9037/S9038 series image sensors have a pixel size of 24 × 24 m and are available in pixel formats of 512 × 4 pixels
and 1024 × 4 pixels.
The S9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled
temperatures. Both the S9037/S9038 series image sensors use a quartz glass window equivalent to SUPRASIL glass that
provides high transmittance even at 193 nm wavelength. These image sensors also have stable quantum effi ciency in the UV
region making them suitable for excimer laser monitors.
High-speed operation: 10 MHz
Pixel size: 24 × 24 μm
Line/pixel binning operation
S9038 series: one-stage thermoelectric cooling
High quantum effi ciency: 90% or more at peak
MPP operation
Excimer laser monitors
High-speed line scan cameras
Structure
Parameter S9037-0902 S9037-1002 S9038-0902S S9038-1002S
Pixel size (H × V) 24 × 24 m
Number of total pixels (H × V) 520 × 6 1044 × 8 520 × 6 1044 × 8
Number of effectivepixels (H × V) 512 × 4 1024 × 4 512 × 4 1024 × 4
Image size (H × V) 12.288 × 0.096 mm 24.576 × 0.096 mm 12.288 × 0.096 mm 24.576 × 0.096 mm
Vertical clock 2 phases
Horizontal clock 2 phases
Output circuit Two-stage MOSFET source follower
Package 24-pin ceramic DIP
Window material*1Quartz window equivalent to SUPRASIL*2AR-coated sapphire*3
Cooling Non-cooled One-stage TE-cooled
*1: Window-less type (ex. S9037-0902N) is available as option.
(Temporary window is fi xed by tape to protect the CCD and wire bonding.)
*2: Resin sealing
*3: Hermetic sealing
ApplicationsFeatures
CCD image sensor S9037/S9038 series
2
Absolute maximum ratings (Ta=25 °C)
Operating conditions (MPP mode, Ta=25 °C)
Electrical characteristics (Typ. Ta=25 °C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature*4Topr -50 - +70 °C
Storage temperature Tstg -50 - +70 °C
Output transistor drain voltage VOD -0.5 - +25 V
Reset drain voltage VRD -0.5 - +18 V
Horizontal input source voltage VISH -0.5 - +18 V
Horizontal input gate voltage VIG1H, VIG2H -10 - +15 V
Summing gate voltage VSG -10 - +15 V
Output gate voltage VOG -10 - +15 V
Reset gate voltage VRG -10 - +15 V
Transfer gate voltage VTG -10 - +15 V
Vertical shift register clock voltage VP1V, VP2V -10 - +15 V
Horizontal shift register clock voltage VP1H, VP2H -10 - +15 V
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*4: Chip temperature
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 12 15 - V
Reset drain voltage VRD 11.5 12 12.5 V
Output gate voltage VOG 135V
Substrate voltage VSS -0-V
Test point Horizontal input source VISH -VRD -V
Horizontal input gate VIG1H, VIG2H -9 -8 0 V
Vertical shift register
clock voltage
High VP1VH, VP2VH 468
V
Low VP1VL, VP2VL -9 -8 -7
Horizontal shift register
clock voltage
High VP1HH, VP2HH 468
V
Low VP1HL, VP2HL -9 -8 -7
Summing gate voltage High VSGH 468
V
Low VSGL -9 -8 -7
Reset gate voltage High VRGH 468
V
Low VRGL -9 -8 -7
Transfer gate voltage High VTGH 468
V
Low VTGL -9 -8 -7
External load resistance RL2.0 2.2 2.4 kΩ
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - - 10 MHz
Line rate -0902 LR -16-
kHz
-1002 - 8 -
Vertical shift register capacitance -0902 CP1V, CP2V - 100 - pF
-1002 - 200 - pF
Horizontal shift register capacitance -0902 CP1H, CP2H - 130 - pF
-1002 - 170 - pF
Summing gate capacitance CSG -30-pF
Reset gate capacitance CRG -30-pF
Transfer gate capacitance CTG -50-pF
Transfer effi ciency*5CTE 0.99995 0.99999 - -
DC output level Vout - 7 - V
Output impedance*6Zo - 500 - Ω
Power dissipation*6 *7P - 100 - mW
*5: Charge transfer effi ciency per pixel, measured at half of the full well capacity
*6: The values depend on the load resistance.
*7: Power dissipation of the on-chip amplifi er plus load resistance
CCD image sensor S9037/S9038 series
3
Spectral response (without window)*11
Electrical and optical characteristics (Typ. Ta=25 °C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat Fw × Sv V
Full well capacity Vertical Fw - 320 - ke-
Horizontal (summing) - 600 -
CCD node sensitivity Sv - 1.2 - V/e-
Dark current*8
(MPP mode)
25 °C DS - 100 1000 e-/pixel/s
0 °C - 10 100
Readout noise*9Nr - 100 - e- rms
Dynamic range (line binning) DR - 6000 - -
Photoresponse nonuniformity*10 PRNU - - ±10 %
Spectral response range (without window) λ- 200 to 1100 - nm
*8: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*9: -40 °C, operating frequency=80 kHz
*10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
Fixed pattern noise (peak to peak)
Signal
× 100
[%]Photoresponse nonuniformity (PRNU) =
*11: Spectral response with quartz glass or AR-coated sapphire
are decreased according to the spectral transmittance
characteristic of window material.
KMPDB0058EB
Quantum efficiency (%)
Wavelength (nm)
(Typ. Ta=25 °C)
0
200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
Front-illuminated CCD
Front-illuminated CCD
(UV coated)
Back-thinned CCD
CCD image sensor S9037/S9038 series
Dark current vs. temperature
KMPDB0256EA
4
Spectral transmittance characteristic
KMPDB0110EA
0
10
100 200
Wavelength (nm)
Transmittance (%)
300 400 500 600 700 800 900
1000 1100 1200
20
30
40
50
60
70
80
90
100 (Typ. Ta=25 °C)
Quartz window
AR coated sapphire
Spectral response
(typical example, 100 to 200 nm, without window)
KMPDB0150EA
Wavelength (nm)
(Ta=25 °C)
Quantum efficiency (%)
120100
0
20
40
120
100
80
60
140 160 180 200
-50 -40 -30 -20 0-10 10 20 30
Temperature (°C)
0.01
1
0.1
10
100
1000
Dark current (e-/pixel/s)
(Typ.)
CCD image sensor S9037/S9038 series
5
S9037-0902, S9038-0902S
S9037-1002, S9038-1002S
Device structure (conceptual drawing of top view)
KMPDC0159EE
KMPDC0160ED
1
Thinning
Thinning
SS
RG
RD
OD
OS
OG
4 blank pixels
SG
P2H P1H
4 blank pixels
512 signal out
2-bevel
IG2H IG1H
ISH
TG
P2V
P1V
4 signal out
6
Horizontal
shift register
Effective pixels
Horizontal
shift register
Effective pixels
Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick
silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may
possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as
needed.
1
Thinning
Thinning
KMPDC0160ED
SS
RD
OD
OS
OG
4 blank pixels
SG
P2H P1H
6-bevel 6-bevel
4 blank pixels
1024 signal out
3-bevel 1-bevel
4 signal out
IG2H IG1H
P2V
P1V
8
RG
ISH
TG
Effective pixels
Horizontal
shift register
Effective pixels
Horizontal
shift register
Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick
silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may
possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as
needed.
CCD image sensor S9037/S9038 series
6
Timing chart (line binning)
KMPDC0161EB
Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG*12 Pulse width Tpwv 1 - - s
Rise and fall times Tprv, Tpfv - 20 - ns
P1H, P2H*12
Pulse width Tpwh 50 - - ns
Rise and fall times Tprh, Tpfh - 10 - ns
Duty ratio - - 50 - %
SG
Pulse width Tpws 50 - - ns
Rise and fall times Tprs, Tpfs - 10 - ns
Duty ratio - - 50 - %
RG Pulse width Tpwr - 15 - ns
Rise and fall times Tprr, Tpfr 5 - - ns
TG (P2V) - P1H Overlap time Tovr 3 - - s
*12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
Integration period
(Shutter must be open)
Vertical binning period
(Shutter must be closed)
P1V
P2V, TG
P1H
P2H, SG
Readout period (Shutter must be closed)
3.. 6
3.. 8
←
←
4 + 2 (bevel): S903*-0902
4 + 4 (bevel): S903*-1002
Tpwv
Tovr
Tpwh, Tpws
Tpwr
123
519
1043
520
1044
: S903*-0902
: S903*-1002
4..518
4..1042
12
D5..D7D2..D4D1
D1
D8
D20
D2..D10, S1..S1024 D11..D19
RG
OS
S1..S512 : S903*-0902
: S903*-1002
CCD image sensor S9037/S9038 series
7
KMPDA0153ED
KMPDA0155EC
KMPDA0154EC
Dimensional outline (unit: mm)
S9037-0902
S9038-0902S
S9037-1002
Window 16.3*
8.2*
34.0 ± 0.34
2.54 ± 0.13
22.9 ± 0.30
22.4 ± 0.30
0.096
Photosensitive area
12.29
4.4 ± 0.44
4.8 ± 0.49
2.4 ± 0.15
3.8 ± 0.44
Photosensitive surface
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristic” graph
Index mark
pin no. 1
3.0
(24 ×) 0.5 ± 0.05
1
12
24 13
Window 28.6*
22.9 ± 0.30
22.4 ± 0.30
Photosensitive area
24.58
0.096
8.2*
44.0 ± 0.44
3.0
Index mark
pin no. 1
2.54 ± 0.13
Photosensitive surface
(24 ×) 0.5 ± 0.05
4.4 ± 0.44
4.8 ± 0.49
2.4 ± 0.15
3.8 ± 0.44
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristic” graph
112
24 13
Window 16.3*
8.2*
34.0 ± 0.34
50.0 ± 0.30
2.54 ± 0.13
19.0
4.0
42.0
0.096
7.3 ± 0.63
1.0
7.7 ± 0.68
6.7 ± 0.63
4.8 ± 0.15
Photosensitive area
12.29
Index mark
pin no. 1
3.0
TE-cooler
Photosensitive surface
22.9 ± 0.30
22.4 ± 0.30
(24 ×) 0.5 ± 0.05
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristic” graph
1
12
24 13
CCD image sensor S9037/S9038 series
8
KMPDA0165EC
KMPDA0166EC
S9037-0902N S9037-1002N
Window16.3
4.5
34.0 ± 0.34
2.54 ± 0.13
22.9 ± 0.30
22.4 ± 0.30
0.096
Photosensitive area
12.29
4.8 ± 0.49
2.4 ± 0.15
Index mark
pin no. 1
3.0
Photosensitive surface
(24 ×) 0.5 ± 0.05
1
24 13
12
Window 28.6
22.9 ± 0.30
22.4 ± 0.30
Photosensitive area 24.58
0.096
4.5 ± 0.15
44.0 ± 0.34
2.54 ± 0.13
3.0
Index mark
pin no. 1 Photosensitive surface
(24 ×) 0.5 ± 0.05
4.8 ± 0.49
2.4 ± 0.15
1
24 13
12
KMPDA0156EC
S9038-1002S
1.0
3.0
Index mark
pin no. 1
0.096
4.0
19.0
22.4 ± 0.30
22.9 ± 0.30
44.0 ± 0.44
52.0
60.0 ± 0.30
Window 28.6*
Photosensitive area 24.58
8.2*
TE-cooler
2.54 ± 0.13
Photosensitive surface
(24 ×) 0.5 ± 0.05
7.3 ± 0.63
7.7 ± 0.66
6.7 ± 0.63
4.8 ± 0.15
* Size of window that guarantees the transmittance in the
“Spectral transmittance characteristic” graph
112
24 13
CCD image sensor S9037/S9038 series
9
KMPDA0167EC
KMPDA0168EC
S9038-0902N
S9038-1002N
Window 16.3
4.5
34.0 ± 0.34
50.0 ± 0.30
2.54 ± 0.13
22.9 ± 0.30
19.0
4.0
42.0
22.4 ± 0.30
0.096
1.0
7.7 ± 0.68
4.8 ± 0.15
Photosensitive area
12.29
Photosensitive surface
Index mark
pin no. 1
3.0
TE-cooler
(24 ×) 0.5 ± 0.05
1
24 13
12
1.0
3.0
Photosensitive surface
Index mark
pin no. 1
0.096
4.0
19.0
22.4 ± 0.30
22.9 ± 0.30
44.0 ± 0.44
52.0
60.0 ± 0.30
2.54 ± 0.13
Window 28.6
Photosensitive area 24.58
4.5 ± 0.15
TE-cooler
7.7 ± 0.68
4.8 ± 0.15
(24 ×) 0.5 ± 0.05
1
24 13
12
CCD image sensor S9037/S9038 series
10
Specifi cations of built-in TE-cooler (Typ.)
Pin connections
Parameter Symbol Condition S9038-0902S S9038-1002S Unit
Internal resistance Rint Ta=25 °C 2.5 1.2 Ω
Maximum current*14 Imax Tc*15=Th*16=25 °C 1.5 3.0 A
Maximum voltage Vmax Tc*15=Th*16=25 °C 3.8 3.6 V
Maximum heat absorption
*17 Qmax 3.4 5.1 W
Maximum temperature
of heat radiating side -7070°C
*14: If the current greater than this value fl
ows into the thermoelectric cooler
, the heat absorption begins to decrease due to the
Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and
maintain stable operation, the supply current should be less than 60% of this maximum current.
*15: Temperature of the cooling side of thermoelectric cooler
*16: Temperature of the heat radiating side of thermoelectric cooler
*17: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum
current is supplied to the unit.
Pin
no.
S9037 series Remark S9038 series Remark
Symbol Description Symbol Description
1 RD Reset drain +12 V RD Reset drain +12 V
2 OS Output transistor source RL=2.2 kΩOS Output transistor source RL=2.2 kΩ
3 OD Output transistor drain +15 V OD Output transistor drain +15 V
4 OG Output gate +3 V OG Output gate +3 V
5 SG Summing gate
Same timing as P2H
SG Summing gate
Same timing as P2H
6- -
7- -
8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2
9 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1
10 IG2H
Test point (horizontal input gate-2)
-8 V IG2H
Test point (horizontal input gate-2)
-8 V
11 IG1H
Test point (horizontal input gate-1)
-8 V IG1H
Test point (horizontal input gate-1)
-8 V
12 ISH
Test point (horizontal input source)
Connected to RD ISH
Test point (horizontal input source)
Connected to RD
13 TG*13 Transfer gate
Same timing as P2V
TG*13 Transfer gate
Same timing as P2V
14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2
15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1
16 NC Th1 Thermistor
17 NC Th2 Thermistor
18 NC P- TE-cooler-
19 NC P+ TE-cooler+
20 SS Substrate (GND) GND SS Substrate (GND) GND
21 NC NC
22 NC NC
23 NC NC
24 RG Reset gate RG Reset gate
*13: Isolation gate between vertical register and horizontal register. In standard operation, input the same pulse to TG as input to P2V
.
CCD image sensor S9037/S9038 series
11
KMPDB0178EA KMPDB0179EA
KMPDB0111EB
S9038-0902S S9038-1002S
0
1
2
3
Voltage (V)
CCD temperature (°C)
4
7
6
5
-40
-30
2.01.51.0
Current (A)
0.50
-20
-10
0
10
20
30
(Typ. Ta=25 °C)
Voltage vs. Current
CCD temperature vs. Current
0
1
2
3
Voltage (V)
CCD temperature (°C)
4
7
6
5
-40
-30
432
Current (A)
10
-20
-10
0
10
20
30
(Typ. Ta=25 °C)
Voltage vs. Current
CCD temperature vs. Current
10 kΩ
220 240 260
Temperature (K)
Resistance
280 300
100 kΩ
1 MΩ(Typ. Ta=25 °C)
Specifications of built-in temperature sensor
Precautions (electrostatic countermeasures)
Element cooling/heating temperature incline rate
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation be-
tween the thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: resistance at absolute temperature T1 [K]
RT2: resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
The characteristics of the thermistor used are as follows.
R298=10 kΩ
B298/323=3450 K
・
Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing and use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
・
Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
・
Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge.
・
Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
CCD image sensor S9037/S9038 series
12
Multichannel detector heads C9047 series
Features
Digital output
Real-time digital sensitivity correction
High UV sensitivity: sensitive down to 130 nm
External trigger operation
Compact and lightweight
Easy handling
PC controllable (RS-232C)
Fast line rate
S9037-0902: 16 kHz
S9037-1002: 9 kHz
The C9047 series is an industrial camera with a high-speed, high resolution CCD (S9037-0902, S9037-1002) and usable in a wide range
of applications including production line inspection and surveying. The CCD used in the C9047 series is sensitive in the ultraviolet region
(down to 130 nm*20) making the C9047 series suitable for UV laser applications.
*20: When the CCD sensor faceplate is removed.
Connection example
Power supply (+5V, ±15 V)
PC (Windows 2000/XP)
Interface board
C8940 (RS-422)
C8940-01 (LVDS)
CCD area image sensor
S9037 series
+
Multichannel detector head
C9047 series
+
POWER
RS-232C
DIGITAL I/O
KACCC0210EE
Refer to the drawing below to set up the hardware used in conjunction with this camera.
Cat. No. KMPD1067E06 Jun. 2012 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
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Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of June, 2012.
CCD image sensor S9037/S9038 series
13
Related information
Precautions
Notice
Image sensors/Precautions
Technical information
FFT-CCD area image sensor/Technical information
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