CPH6005-TL-E - ON SEMICONDUCTOR

CPH6005

No.7689-1/3

Features

•High fT (fT=1.5GHz typ).

•Large current (IC= --300mA).

•Adoption of FBET process.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --30 V

Collector-to-Emitter Voltage VCEO --20 V

Emitter-to-Base Voltage VEBO --3 V

Collector Current IC--300 mA

Collector Current (Pulse) ICP --600 mA

Collector Dissipation PC

When mounted on ceramic substrate (600mm

✕0.8mm)

1.0 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB=--20V, IE=0A --0.1 μA

Emitter Cutoff Current IEBO VEB=--2V, IC=0A --1.0 μA

DC Current Gain hFE1V

CE=--5V, IC=--50mA 15 100

hFE2V

CE=--5V, IC=--300mA 5

Gain-Bandwidth Product fTVCE=--5V, IC=--100mA 1.5 GHz

Output Capacitance Cob VCB=--10V, f=1MHz 4.9 pF

Reverse T ransfer Capacitance Cre VCB=--10V, f=1MHz 4.4 pF

Marking : GE Continued on next page.

SANYO Semiconductors

DATA SHEET

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN7689A

20608AB TI IM TC-00001188 / 42004 TS IM TA-100888

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

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customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

CPH6005 PNP Epitaxial Planar Silicon Transistor

Video Output Driver, High-Frequency

Amplifier Applications

CPH6005

No.7689-2/3

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--100mA, IB=--10mA

--0.4 --1.0

Base-to-Emitter Saturation Voltage VBE(sat) IC=--100mA, IB=--10mA

--0.9 --1.2

Package Dimensions

unit : mm (typ)

7018A-002

1 : Collector

2 : Collector

3 : Base

4 : Emitter

5 : Collector

6 : Collector

SANYO : CPH6

321

645

2.9

0.05

0.4

2.8

1.6

0.2

0.6 0.6

0.9

0.2

0.15

0.95

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

IC -- VCE

hFE -- IC

Collector Current, IC -- mA

DC Current Gain, hFE

fT -- IC

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- GHz

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

IC -- VCE

--100

--80

--60

--40

--20

00 --4 --8 --16 --20--12

ITR04387

IB=0mA

--0.2mA

--0.4mA

--0.6mA

--0.8mA

--1.0mA

--1.2mA

--1.4mA

--1.6mA

--1.8mA

--2.0mA

ITR04388

IB=0mA

--0.5mA

--1.0mA

--1.5mA

--2.0mA

--3.0mA

--2.5mA

--3.5mA

--4.0mA

--5.0mA

--4.5mA

--200

--160

--120

--80

--40

00 --1 --2 --4 --5--3

ITR04389

100

357 23

--1.0 57 23

--10 57 5723

--100

VCE= --5V

ITR04390

1.0

0.1

57 23 5

--1.0 --10

7235 235

--100

VCE= --5V

CPH6005

No.7689-3/3

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

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without the prior written consent of SANYO Semiconductor Co.,Ltd.

Collector Current, IC -- mA

VCE(sat) -- IC

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Cob, Cre -- VCB

Cob, Cre -- pF

Collector-to-Base Voltage, VCB -- V

Collector Dissipation, PC -- W

Ambient Temperature, Ta -- °C

PC -- Ta

A S O

Collector Current, IC -- mA

Collector-to-Emitter Voltage, VCE -- V

IC / IB=10

--1.0

--0.1

357 5723 5723 523

--1.0 --10 --100

VCE(sat) -- IC

ITR04391

f=1MHz

ITR04392

57 32

--1.0 57 5732

--10

1.0

Cob

Cre

--100

--10

--1000

--1.0 23 57

--10 32

IT06691 IT06692

ICP= --600mA

IC= --300mA

DC operation

1ms

10ms

1.2

0.2

1.0

0.8

0.6

0.4

40 60 800 20 100 120 140 160

When mounted on ceramic substrate

(600mm

✕0.8mm)

Ta=25°C

Single pulse

When mounted on ceramic substrate (600mm

✕0.8mm)

This catalog provides information as of February, 2008. Specifications and information herein are subject

to change without notice.