75 A
95 A
NEW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.71, .91 SERIES
Bulletin I27132 rev. D 09/97
1
www.irf.com
Parameters IRK.71 IRK.91 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS)
(*) 165 210 A
ITSM @ 50Hz 1665 1785 A
IFSM @ 60Hz 1740 1870 A
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
VRRM
range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to125 oC
(*) As AC switch.
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
75 95 A
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
IRK.71, .91 Series
2
Bulletin I27132 rev. D 09/97
www.irf.com
On-state Conduction
IT(AV) Max. average on-state
current (Thyristors) 180o conduction, half sine wave,
IF(AV) Max. average forward TC = 85oC
current (Diodes)
IO(RMS)Max. continuous RMS
on-state current. 165 210
As AC switch
ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
IFSM or forward current 1400 1500 t=10ms 100% VRRM
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ = 25 oC,
1940 2100 t=8.3ms no voltage reapplied
I2
t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ = 25 oC,
15.60 18.30 t= 8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.82 0.80 Low level (3)
voltage (2) 0.85 0.85 High level (4)
rtMax. value of on-state 3.00 2.40 Low level(3)
slope resistance (2) 2.90 2.25 High level (4)
VTM Max. peak on-state or ITM = π x IT(AV)
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V DRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Parameters IRK.71 IRK.91 Units Conditions
Initial TJ = TJ max.
A
KA2s
V
mΩ
1.59 1.58 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = T J max.
75 95
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
IRK.71, .91 Series
3
Bulletin I27132 rev. D 09/97
www.irf.com
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
15 mA TJ = 125 oC, gate open circuit
Thermal and Mechanical Specifications
500 V/µs
Parameters IRK.71 IRK.91 Units Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
VINS RMS isolation voltage V
PGM Max. peak gate power 12 12
PG(AV) Max. average gate power 3.0 3.0
IGM Max. peak gate current 3.0 3.0 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage TJ = 125oC,
that will not trigger rated VDRM applied
IGD Max. gate current TJ = 125oC,
that will not trigger rated VDRM applied
Parameters IRK.71 IRK.91 Units Conditions
0.25 V
6mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters IRK.71 IRK.91 Units Conditions
IRK.71, .91 Series
4
Bulletin I27132 rev. D 09/97
www.irf.com
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Outlines Table
IRKT../.. (*)
IRKL../.. (*)
IRKH../.. (*)
(*) For terminals connections, see Circuit configurations Table
All dimensions in millimeters (inches)
30 ± 0 . 5
(1. 18 ± 0.02)
29 ± 0.5
(1.13 ± 0.0 2)
6. 1 ± 0. 3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0. 75
(0. 81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
5.8 ± 0.25
(0. 16 ± 0.01)
4
Pitch 4.0 ± 0. 2
( 0 . 2 3 ± 0.01 )
(0.25 ± 0.01)
6.3 ± 0.3
576
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
30 ± 0 .5
(1. 18 ± 0.02)
29 ± 0. 5
(1 .13 ± 0.0 2)
6.1 ± 0.3
(0. 24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0. 5
(0. 61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston t ab. 2.8 x 0. 8
20. 5 ± 0. 75
(0.8 1 ± 0.03)
15 ± 0 .5
(0.59 ± 0.02)
20 ± 0.5
(0. 79 ± 0.02)
(0.16 ± 0. 01)
4
P it c h 4.0 ± 0.2
(0.25 ± 0.01)
6. 3 ± 0. 3
5
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0. 02)
92 ± 0. 5
20 ± 0 .5
Screws M5 x 0.8
( 0 . 1 1 x 0. 0 3)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
30 ± 0.5
( 1.1 8 ± 0.02 )
29 ± 0.5
(1.13 ± 0. 02)
6. 1 ± 0. 3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.0 4)
Faston tab. 2.8 x 0.8
20. 5 ± 0. 75
(0.81 ± 0. 03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.1 6 ± 0. 01)
Pitch 4.0 ± 0.2
(0.25 ± 0.01)
6.3 ± 0.3
76
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.71, .91 Series
5
Bulletin I27132 rev. D 09/97
www.irf.com
IRK T 91 / 16 S90
Device Code
1 2 34
5
1- Module type
2- Circuit configuration (See Circuit Configuration table)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16 etc.
Ordering Information Table
IRK.92 types
With no auxiliary cathode
Circuit Configurations Table
IRKT IRKH IRKL
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
64
13.8 (0.53)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 102030405060708
0
Maximu m Allowabl e Case Temperatu re (°C
)
30°60° 90° 120° 180°
A verage On-state Current (A)
Conduction Angle
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
70
80
90
100
110
120
130
0 204060801001
20
DC
30°60°90°120° 180°
Avera ge On-stat e Current (A)
Max imum Allowable Case Te mperature ( °C
)
Co n d u c tion Peri od
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
IRK.71, .91 Series
6
Bulletin I27132 rev. D 09/97
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Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0 10203040506070
80
180°
120°
90°
60°
30°
RM S Limit
Condu ction Ang le
Max imum Average On-st ate P ow er Loss (W
)
Avera ge On-stat e Curr ent (A)
IRK.71.. Series
Per Junction
T = 125°C
J
0
20
40
60
80
100
120
140
0 20 40 60 80 100 12
0
DC
180°
120°
90°
60°
30°
RMS Limit
Co nductio n Pe r i od
Maxim um Average On-state Power Loss (W
)
Average On-state Current (A)
IRK.71.. Series
Per Ju nct io n
T = 125°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1101
00
Number Of E qua l Amplitude Half Cy cle Curr ent Pulses (N)
Peak Half Sine W ave On-state Current (A
)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.71.. Series
Per Junction
600
800
1000
1200
1400
1600
1800
0.01 0.1
1
Peak Half Si ne Wa ve O n- state C ur rent ( A
)
Pul se Train Duration (s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Of C on d uction Ma y Not Be Main ta in ed
.
RRM
J
M aximum Non Re pet itive S urge Curre n
t
Versu s Pulse Tra in Du ra ti on. Co nt ro
l
IRK.71.. Series
Per Junct ion
0 20 40 60 80 100 120 140
Maximum A llowable Ambient Temperature (°C
)
R = 0.1 K/W - Delta R
thSA
3 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.4 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160 180
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Tot al On-st ate Power Loss (W)
Conduction Ang le
IRK.71. . Series
Per Module
T = 12 5 °C
J
IRK.71, .91 Series
7
Bulletin I27132 rev. D 09/97
www.irf.com
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
0 20 40 60 80 100 120 140
Maximum Al lowable Ambient Temperature (°C
)
R = 0.1 K/W - D elta R
thSA
0.3 K/W
0.5 K/W
1 K/W
2 K/W
0.2 K/W
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160 180
Total Output Curr e nt ( A )
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.71.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20406080100120140
Maximum Allowable Am bien t Tem perature ( °C
)
1 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
0.2 K/W
thSA
0
100
200
300
400
500
600
700
800
0 40 80 120 160 200 240
Tota l Ou tp u t Cu r re nt ( A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.71.. Series
Three Ph ase Bridge
Connected
T = 125°C
J
70
80
90
100
110
120
130
0 2040608010
30°60° 90° 120° 180°
Average On-state Current (A)
Maximum Allowable Case Temper atur e (°C
Conduction Angle
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 16
0
DC
30°60°90°120°180°
Average On-s tate Current (A)
Maxim um Allowable Case Temperature (°C
)
Con duction Pe r iod
IRK.91.. Seri es
R (DC) = 0.27 K/W
thJC
IRK.71, .91 Series
8
Bulletin I27132 rev. D 09/97
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Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
Fig. 16 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
140
0 204060801
00
RMS Limit
Conduction Angle
Maximum Av erag e On-state Power Los s ( W
)
Average On - st ate Cu rr en t (A )
180°
120°
90°
60°
30°
IRK.91.. Series
Per Junction
T = 125°C
J
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 16
0
DC
180°
120°
90°
60°
30°
RM S Li mit
Conduction Peri od
Maxim um Average On-state Power L oss (W
)
Average On-state Current (A)
IR K.91.. S eries
Per Junction
T = 125°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1101
00
Number Of E qual Amplitu de Half Cy cle Current Pulses (N
)
Peak Half Sine Wave On-state Cu rrent (A
)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
A t Any Rat ed Load Co ndition A nd Wit h
Rate d V A pplied F ollowing Surge.
RRM
IR K. 91. . Seri es
Per Junction
600
800
1000
1200
1400
1600
1800
0.01 0.1
1
Peak Half Sine Wave On-state Current (A
)
Pul se Trai n Duration (s)
Versus Pulse Train Durat ion. Contro
l
I nit ia l T = 12 5°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Of Conduction May Not Be Maintained
.
M ax imum Non R ep etiti v e Surge C urren
t
IRK.91.. Series
Per Junction
0 20 40 60 80 100 120 140
Maxim um Allowable Ambient Temperature (°C
)
1.5 K/W
3 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
To tal R MS Out p ut Cu r r en t ( A)
M axim u m Total On -s ta te Power L os s (W )
Co nd ucti on Angl e
IR K.91.. S eries
Per Module
T = 125°C
J
IRK.71, .91 Series
9
Bulletin I27132 rev. D 09/97
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Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambi ent Temper ature (°C
)
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
1 K/W
2 K/W
thSA
0
100
200
300
400
500
600
0 40 80 120 160 200
To tal Ou tput C urrent ( A)
Max imum Tot a l Power Lo ss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.91.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Max imum Allowable Ambient Tempera ture (°C
)
0.5 K/W
1 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
100
200
300
400
500
600
700
800
900
0 40 80 120 160 200 240 280
Total Output Current (A)
Max imum T otal Pow e r Loss (W )
120°
(Rect)
3 x IRK.91.. Serie s
Three Ph ase Bridge
Connected
T = 125°C
J
1
10
100
1000
0.511.522.533
.5
T = 25°C
J
Instantaneous On-st ate C ur r ent ( A)
Instantaneous O n-state Voltage (V)
T = 125°C
J
IRK.91.. Series
Per Junction
1
10
100
1000
0.511.522.533.5
4
T = 25°C
J
Instant aneo us On-stat e Current (A)
Instant aneo us On-state Volt age (V)
T = 125°C
J
IRK. 71.. Series
Per Junction
IRK.71, .91 Series
10
Bulletin I27132 rev. D 09/97
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Fig. 23 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
Fig. 24 - Gate Characteristics
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 10
0
Maxim um Reverse Recovery Current - Irr ( A
)
Rate Of Fall Of Forward Current - di/dt (A/µ
s)
100 A
50 A
I = 200 A
TM
20 A
10 A
IR K.7 1.. Seri es
IR K.9 1.. Seri es
T = 125 °C
J
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 10
0
100 A
50 A
R a t e O f Fa l l Of O n- s ta t e C u rre nt - d i/dt (A /µ
s)
Ma ximum Re ver s e Recove ry Cha rge - Qrr (µC
)
I = 200 A
TM
20 A
10 A
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 1
0
Square Wave Pulse Dur ation (s)
thJC
Transient Thermal Impedanc e Z (K/W
)
Per J uncti o n
Steady State Value:
R = 0.33 K/W
R = 0.27 K/W
(DC Operation)
IRK.71.. Series
IRK.91.. Series
thJC
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 100
0
(b)
(a)
Rectangu lar gat e puls e
(4) (3) (2) (1)
Inst a ntane o us Gat e Current (A)
Insta ntaneou s Gat e Vo lta ge (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Rec ommended load line for
b)Recommen ded load li ne f or
VGD
IGD
Frequency Limite d by PG(AV )
(1) PGM = 200 W, tp = 3 00 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 3 0% rated di/dt: 15 V , 40 ohms
tr = 1 µs, tp >= 6 µs
r ate d di/dt: 2 0 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
IRK.71../.91.. Ser ies