LESHAN RADIO COMPANY, LTD.
S5–1/3
High –Speed Switching Diode
CASE 477– 02, STYLE 1
SOD– 323
1
2
MMDL914T1
2
ANODE
1
CATHODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V R100 Vdc
Forward Current I F200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,* P D200 mW
T A = 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient R θJA 635 °C/W
Junction and Storage Temperature T J , T stg 150 °C
**FR-4 Minimum Pad
DEVICE MARKING
MMDL914T1 = 5D
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I R = 100 µAdc) V (BR) 100 — Vdc
Reverse Voltage Leakage Current I R
(V R = 20Vdc) — 25 nAdc
(V R = 75Vdc) — 5.0 µAdc
Diode V oltage C T— 4.0 pF
(V R =0, f =1.0MHz )
Forward Voltage V F— 1.0 Vdc
(I F = 10 mAdc)
Reverse Recovery Time t rr — 4.0 ns
(I F = I R = 10 mAdc ) (Figure 1)