
+125 OC
TSTG
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage IF = 10mA
IF = 100mA VFV
0.34
0.55
Reverse current
Capacitance between terminals
VR = 10V
f = 1 MHz, and 10 VDC reverse voltage
IR
CT
uA
pF
6
30
CDBER0140L-HF
SMD Schottky Barrier Diode
QW-G1031
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRRM
Average forward rectified current
Reverse voltage
Repetitive Peak reverse voltage
Forward current,surge peak
Symbol
Parameter Conditions Min
Max
Unit
V
V
mA
100
40
45
Tj
Storage temperature
Junction temperature OC
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method) 1A
REV:B
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0.022(0.55) Typ.
0.016(0.40) Typ.
Comchip Technology CO., LTD.
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & B8
-Mounting position: Any
-Weight: 0.002 gram(approx.).
Io = 100 mA
VR = 40 Volts
RoHS Device
Halogen Free
0503/SOD-723F