Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
48 62.5
74 110
RθJL 35 60
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20
Pulsed Drain Current B
Power Dissipation
TA=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient ASteady-State
4.5
3.6
20
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
60
W
Junction and Storage Temperature Range
A
PD
°C
2
1.28
-55 to 150
TA=70°C
ID
AO4828
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 60V
ID = 4.5A (VGS = 10V)
RDS(ON) < 56mΩ (VGS = 10V)
RDS(ON) < 77mΩ (VGS = 4.5V)
General Description
The AO4828 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4828 is Pb-free
(meets ROHS & Sony 259 specifications). AO4828L
is a Green Product ordering option. AO4828 and
A
O4828L are electrically identical.
G1
D1
S1 G2
D2
S2
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4828
Symbol Min Typ Max Units
BVDSS 60 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 2.1 3 V
ID(ON) 20 A
46 56
TJ=125°C 80 100
64 77 mΩ
gFS 11 S
VSD 0.74 1 V
IS3A
Ciss 450 540 pF
Coss 60 pF
Crss 25 pF
Rg1.65 2 Ω
Qg(10V) 8.5 10.5 nC
Qg(4.5V) 4.3 5.5 nC
Qgs 1.6 nC
Qgd 2.2 nC
tD(on) 4.7 ns
tr2.3 ns
tD(off) 15.7 ns
tf1.9 ns
trr 27.5 35 ns
Qrr 32 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
Reverse Transfer Capacitance
IF=4.5A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=48V, VGS=0V
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=4.5V, ID=3A
IS=1A,VGS=0V
VDS=5V, ID=4.5A
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=10V, VDS=30V, ID=4.5A
Total Gate Charge
Gate Drain Charge
VGS=0V, VDS=30V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.
Rev 3: June 2005
Alpha & Omega Semiconductor, Ltd.
AO4828
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
5
10
15
20
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3.5V
4.0V
10.0
5.0V
4.5V
0
5
10
15
2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
20
30
40
50
60
70
80
90
100
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
ID=3.0A
ID=4.5A
40
60
80
100
120
140
160
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
GS
=4.5V
V
GS
=10V
ID=4.5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO4828
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
012345678910
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
0 102030405060
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
1
0
m
s
1m
s
0
.1
s
1
10s
D
C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
VDS=30V
ID= 4.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
o
nT
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.