AO4828 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4828 is Pb-free (meets ROHS & Sony 259 specifications). AO4828L is a Green Product ordering option. AO4828 and AO4828L are electrically identical. VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56m (VGS = 10V) RDS(ON) < 77m (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 G1 SOIC-8 G2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum 60 Units V 20 V 20 2 W 1.28 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 3.6 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 4.5 TA=25C Power Dissipation D2 D2 D2 D1 D1 RJA RJL Typ 48 74 35 Max 62.5 110 60 Units C/W C/W C/W AO4828 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55C nA 3 V 46 56 80 100 VGS=4.5V, I D=3A 64 77 VDS=5V, ID=4.5A 11 TJ=125C gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge A 100 Static Drain-Source On-Resistance Coss 5 2.1 VGS=10V, I D=4.5A Crss Units V VDS=48V, VGS=0V Zero Gate Voltage Drain Current IS Max 60 IDSS RDS(ON) Typ A VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, I D=4.5A m S 0.74 450 m 1 V 3 A 540 pF 60 pF 25 pF 1.65 2 8.5 10.5 nC 4.3 5.5 nC 1.6 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 4.7 ns Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=30V, RL=6.7, RGEN=3 2.3 ns 15.7 ns 27.5 32 1.9 trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/s Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/s ns 35 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4828 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 10.0 5.0V VDS=5V 10 4.5V 125C ID(A) ID (A) 15 10 4.0V 5 5 25C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 5 2 Normalized On-Resistance 90 80 RDS(ON) (m) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=4.5V 70 60 50 VGS=10V 40 30 20 VGS=10V 1.8 ID=4.5A 1.6 VGS=4.5V ID=3.0A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 ID=4.5A 140 1.0E+00 125C 1.0E-01 IS (A) 120 RDS(ON) (m) 3 125C 100 1.0E-02 25C 1.0E-03 80 25C 1.0E-04 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4828 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=30V ID= 4.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 1 2 3 4 5 6 7 8 9 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10s 100s 10ms 1ms 1s 1.0 10s TJ(Max)=150C TA=25C 40 50 60 TJ(Max)=150C TA=25C 30 Power (W) ID (Amps) 10.0 0.1s 20 10 DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZJA Normalized Transient Thermal Resistance 30 40 RDS(ON) limited 10 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000