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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54TW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAT54TW
Marking:KLA
Maximum Ratings @TA=25℃
Parameter Symbol Limits Unit
Peak Repetitive reverse voltage
DC Blocking Voltage VRM
VR 30 V
Average Rectified Outpu t Current IO 100 mA
Power Dissipation PD 150 mW
Junction temperature TJ 125 ℃
Storage temperature rang e TSTG -65-125 ℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100μA 30 V
Reverse voltage leakage current IR V
R=25V 2
uA
Forward voltage VF
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
240
320
400
500
1000
mV
Total capacitance CT V
R=1V,f=1MHz 10
pF
Reverse recovery time t r r IF=10mA, IR=10mA~1mA
RL=100Ω 5
nS
WBFBP-06C
(2×2×0.5)
unit: mm
Typical Characteristics
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 017 REF.
0. 500 REF. 0. 020 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP. 0. 026 TYP.
0. 420 REF. 0. 017 REF.
0. 420 REF.
0. 400 REF. 0. 016 REF.
0. 300 REF. 0. 012 REF.
APPLICATION CIRCUITS
Bridge rectifiers
