IXZ2210N50L2
RF Power MOSFET
Symbol Parameter Test Conditions Maximum Units
VDSS Drain-source voltage TJ = 25°C to 150°C 500
V
VDGR Drain-gate voltage TJ = 25°C to 150°C; RGS = 1 M 500
VGS
Gate-source voltage
Continuous ±20
VGSM Transient ±30
ID25 Continuous drain current Tc = 25°C 10 A
PDC Package power dissipation per MOSFET Tc = 25°C 270
W
PDHS Dissipation to heat-sink per MOSFET Tc = 25°C, Derate 2 W/°C above 25°C 200
PDAMB Ambient power dissipation TAMB = 25°C 3
RthJC Thermal resistance junction to case 0.47
° C/W
RthJHS Thermal resistance junction to heat-sink 0.65
TJ, TSTG Operating and storage junction temperature range -55 to 150
° C
TL Lead temperature 1.6mm(0.063 in) from case for 10 s 300
Maximum Rangs
Advantages
High Performance RF Package
Easy to mount—no insulators needed
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power cycling
capability
IXYS RF Low Capacitance Z-MOSTM Process
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
N-channel enhancement mode linear RF power MOSFET
Ideal for class AB and C industrial, scienc, medical, and commercial applicaons. VDSS = 500 V
ID25 = 10 A
Electrical Characteriscs
Symbol Parameter Test Conditions Min Typ Max Units
Static
BVDSS Breakdown voltage drain to source VGS = 0 V, ID = 4 ma 500 V
IDSS Drain leakage current VDS = 0.8VDSS TJ = 25C
VGS= 0 TJ =125C 50
1
A
mA
IGSS Gate leakage current VGS = ±20 VDC, VDS = 0 ±100 nA
gfs Transconductance VDS = 60 V, ID = 0.5ID25, pulse test 3.1 S
VGS(th) Threshold voltage VDS = VGS, ID = 250 4.0 5.4 6.5 V
DRAIN 1
SG1 SD1
GATE 1
DRAIN 2
SG2SD2
GATE 2
IXZ2210N50L2
RF Power MOSFET
Symbol Parameter Test Conditions Min Typ Max Units
Dynamic
RDS(on) Drain to source ON resistance VGS = 15 V, ID = 0.5 ID25
Pulse test, t 300S, duty cycle d 2%
1
CISS Input capacitance
VGS = 0 V, VDS = 0.8 VDSS, f = 1 MHz
611 pF
COSS Output capacitance 100 pF
CRSS Reverse transfer capacitance 6 pF
tD(ON) Turn-on delay time
VGS = 15 V, VDS = 0.8 VDSS
4 ns
tR Rise time 3 ns
tD(OFF) Turn-off delay time 4 ns
tF Fall time 5 ns
Electrical Characteriscs cont.
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the de-
vice.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site;
IXZ2210N50L2
RF Power MOSFET
0
2
4
6
8
10
12
14
16
4 6 8 10 12
IDDrain Current (A)
VGS Gate to Source Voltage (V)
Typical Transfer Characteristics
1
10
100
1000
10000
0 100 200 300 400 500
Capacitance (pF)
VDS (V)
Capacitance vs. VDS
Coss
Ciss
Crss
0
5
10
15
20
25
020 40 60 80 100 120 140
ID(A)
VDS (V)
IDvs. VDS
V
GS
= 7 V
VGS = 8 V
VGS = 9 V
VGS = 10 V
VGS = 11 V
VGS = 12 V
VGS = 15 V
25° C
85° C
-40° C
0
0.5
1
1.5
2
2.5
10 11 12 13 14 15
RDS(ON) (Ω)
VGS Gate to Source Volatge (V)
RDS(ON) vs. VGS
85 °C
-40 °C
25 °C
Fig. 1 Fig. 2
Fig. 3 Fig. 4
All charts are per MOSFET
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Z(th)jc-°C/W
Pulse Width - Seconds
Transient Thermal Impedance per MOSFET
Fig. 5 Fig. 6
IXZ2210N50L2
RF Power MOSFET
0
5
10
15
20
25
30
35
40
020 40 60 80 100
Gain (dB)
Frequency (MHz)
Power Gain vs. Frequency
Bias 125V 0.5A
Bias 100V 0.2A
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12 Mag. S21 Phase S21 Mag. S22 Phase S22
2 1 -56 0.011 66 35.6 155.4 0.886 -3.7
5 0.95 -106.4 0.018 31 23.2 118.6 0.727 -36
10 0.934 -138.5 0.019 5.4 12.6 92.9 0.664 -61
13.56 0.937 -149.1 0.018 -4.2 8.45 82.1 0.674 -75
15 0.938 -151.9 0.018 -7.3 7.8 78.3 0.69 -80
20 0.945 -158.6 0.016 -16 5.5 67.8 0.725 -94.7
25 0.95 -162.7 0.015 -20.9 4.3 60 0.77 -107.3
27.12 0.954 -164.2 0.014 -22.4 3.97 57.3 0.782 -111.4
30 0.959 -165.2 0.013 -24.6 3.3 54 0.798 -117.2
35 0.96 -168 0.011 -26.8 2.76 48.8 0.83 -125.3
40 0.962 -169.7 0.009 -26.3 2.19 44.5 0.856 -132.5
45 0.965 -171.4 0.008 -24.4 1.88 41.4 0.87 -137.9
50 0.969 -172.2 0.007 -19.6 1.55 38 0.89 -143.4
60 0.971 -174.3 0.005 -2 1.19 33 0.909 -151
70 0.972 -175.8 0.005 26.3 0.93 28.7 0.92 -159
80 0.9724 -177.4 0.006 45.8 0.746 25.4 0.935 -165
90 0.972 -178.3 0.008 54.1 0.68 26.8 0.901 -167.24
100 0.972 -179.3 0.009 60 0.585 20 0.939 -172.3
105 0.973 -179.7 0.01 61.5 0.5 19.7 0.94 -174.6
110 0.971 179.7 0.011 64.3 0.468 17.1 0.939 -176.76
Table 1
S Parameters
VDS = 100V IBIAS = 0.2A
Fig. 7
IXZ2210N50L2
RF Power MOSFET
Table 2
S Parameters
VDS = 100V IBIAS = 0.6A
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12 Mag. S21 Phase S21 Mag. S22 Phase S22
2 1 -67.8 0.01 61.9 62.5 151 0.79 -15
5 0.924 -117 0.015 26.6 36.5 114 0.57 -53
10 0.91 -145.7 0.016 5.3 19.7 91 0.51 -76
13.56 0.916 -154 0.015 -2.2 14.3 81.6 0.53 -88
15 0.92 -157 0.015 -4.6 12.9 78.1 0.54 -92
20 0.927 -161 0.014 -11 9.3 68.7 0.59 -105
25 0.933 -165 0.012 -15 6.9 61.2 0.62 -115.6
27.12 0.935 -166 0.011 -15.5 6.3 58.4 0.65 -118
30 0.939 -167.5 0.011 -17.4 5.4 55.2 0.702 -123
35 0.945 -169.5 0.01 -19 4.3 50 0.74 -130
40 0.95 -171 0.008 -17.6 3.6 45.6 0.78 -136
45 0.955 -172.3 0.008 -13 3 42.1 0.805 -141
50 0.96 -173.4 0.006 -9 2.5 38.6 0.825 -146
60 0.964 -175.4 0.0057 8 1.94 33.1 0.86 -154
70 0.967 -177 0.005 31 1.49 28.6 0.885 -160.5
80 0.97 -178.3 0.006 47 1.19 25.3 0.897 -166.5
90 0.972 -178.5 0.008 56 1.05 27.8 0.865 -169.7
100 0.971 -179.5 0.01 61 0.903 19.7 0.905 -173.7
105 0.972 -179.9 0.01 62 0.82 18 0.912 -175.8
110 0.972 179.5 0.011 64 0.78 16.7 0.912 -177.8
IXZ2210N50L2
RF Power MOSFET
Table 3
S Parameters
VDS = 125V IBIAS = 0.5A
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12 Mag. S21 Phase S21 Mag. S22 Phase S22
2 1 -60 0.009 64 55 153 0.825 -9.5
5 0.935 -112 0.015 29 34 116 0.618 -43
10 0.922 -142 0.016 6.5 18.7 92 0.54 -66
13.56 0.925 -151 0.016 -1.4 13.7 83 0.55 -79
15 0.927 -155 0.015 -3.7 12.5 79.6 0.56 -83
20 0.933 -160 0.014 -11.2 9 70.1 0.61 -97
25 0.939 -164 0.0128 -15.1 6.7 62.4 0.67 -107
27.12 0.942 -165.8 0.0123 -16.3 6 59.8 0.68 -111
30 0.944 -167 0.0116 -17.5 5.3 56.5 0.72 -116
35 0.95 -169 0.01 -18 4.2 51.3 0.76 -124
40 0.955 -171 0.0089 -17.8 3.3 47 0.79 -130
45 0.959 -172 0.008 -15 2.8 43.4 0.81 -136
50 0.961 -173.2 0.007 -11 2.4 39 0.83 -141
60 0.967 -175 0.0055 6 1.8 34.5 0.86 -150
70 0.97 -177 0.0055 31 1.4 29.6 0.88 -157
80 0.971 -178.3 0.0064 44.5 1.1 26.3 0.9 -164
90 0.972 -179.6 0.0084 56 1.04 28.5 0.86 -165
100 0.972 -179.4 0.0095 61 0.88 20.6 0.908 -171
105 0.97 -179.9 0.01 61.7 0.8 19 0.91 -173
110 0.97 179 0.011 64 0.74 17.5 0.91 -175
IXZ2210N50L2
RF Power MOSFET
Doc #dsIXZ2210N50L2 REV 9/16
© 2016 IXYS RF
Fig. 7 Package Dimensions
Source1 Source 1
Source 2 Source 2
Gate 1 Drain 1
An IXYS Company
1609 Oakridge Dr. Suite 100
Fort Collins, CO USA 80525
970-493-1901 Fax: 970-232-3025
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
Drain 2
Gate 2