MSFC110 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 110Amp Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC110-08 MSFC110-12 MSFC110-16 800V 1200V 1600V 900V 1300V 1700V Diode Maximum Ratings Symbol Values Units ID Output Current(D.C.) Tc=85 110 A IFSM Surge forward current t=10mS Tvj =45 2250 A 25000 A2s 3000 -40 to +125 2 it Item Circuit Fusing Consideration Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature Mt Mounting Torque Ms Weight a.c.50HZ;r.m.s.;1min -40 to +125 Thermal Impedance, max. V To terminals(M5) 315% Nm To heatsink(M6) 515% Nm 100 g ModuleApproximately Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) Conditions Values Units Junction to Case Conditions 0.14 /W Case to Heatsink 0.10 /W Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. MSFC110 - Rev 0 Oct, 2011 Conditions T=25 IF =300A Tvj =25 VRD=VRRM Tvj =125 VRD=VRRM Values Min. Typ. 0.5 6 Max. 1.65 Units V mA mA www.microsemi.com 1/4 MSFC110 Thyristor Maximum Ratings Symbol Values Units ITAV Average On-State Current Sine 180o;Tc=85 110 A ITSM Surge On-State Current TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 2250 1900 A Circuit Fusing Consideration TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 25000 18000 A2s i2t Item Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature Mt Mounting Torque Ms Conditions a.c.50HZ;r.m.s.;1min 3000 -40 to +130 -40 to +125 V To terminals(M5) 315% Nm To heatsink(M6) 515% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Values Units Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions Junction to Case 0.28 /W Case to Heatsink 0.20 /W Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. Conditions Values Min. Typ. Max. Units 1.65 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 20 mA On state threshold voltage For power-loss calculations only (TVJ =125) 0.9 V Value of on-state slope resistance. max TVJ =TVJM 2 m VGT Gate Trigger Voltage, max. TVJ =25 , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25 , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125,VD =2/3VDRM 0.25 V IGD IRRM/IDRM VTO rT T=25 IT =300A Non-triggering gate current, max. TVJ =125, VD =2/3VDRM 6 mA IL Latching current, max. TVJ =25 , RG = 33 300 600 mA IH Holding current, max. TVJ =25 , VD =6V 150 250 mA tgd Gate controlled delay time TVJ=25, IG=1A, diG/dt=1A/us tq Circuit commutated turn-off time TVJ =TVJM MSFC110 - Rev 0 Oct, 2011 1 us 100 us www.microsemi.com 2/4 MSFC110 Performance Curves 200 200 W rec.120 A sin.180 DC 160 DC 150 rec.60 120 rec.30 sin.180 100 rec.120 80 rec.60 50 rec.30 40 PTAV ITAVM 0 0 ITAV 50 100 A 150 0 0 Tc Fig1. Power dissipation 100 2500 Zth(j-S) / W Zth(j-C) 0.25 0.001 t 0.01 0.1 1 10 S 100 50HZ A 1250 0 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 300 A 130 Fig2.Forward Current Derating Curve 0.50 0 50 Typ. 200 max. 100 25 - - -125 IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics MSFC110 - Rev 0 Oct, 2011 www.microsemi.com 3/4 MSFC110 100 1/2*MSFC110 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VG IGT VGD125 IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F1 x Dimensions in mm MSFC110 - Rev 0 Oct, 2011 www.microsemi.com 4/4