on EC SILICON SWITCHING DIODES _ 1$S220,1SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters @ Low capacitance: C,=4.0 pF MAX. @ High speed switching: t,, = 3.0 ns MAX. @ Wide applications including switching, limitter, clipper. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (Tg = 25 C) 18$220 18S221 Peak Reverse Voltage Vem 70 100 v DC Reverse Voltage Ve 70 190 Vv Peak Forward Current lens 300 300 mA Marking Average Rectified Current ig 100 100 mA a : DC Forward Current te 100 100 mA < | 2 Maximum Temperatures u | | ) 3 Junction Temperature T; 150 c a , = Storage Temperature Range Tq -55 to +150 c Con Diagram ] Thermal Resistance (Top View! Junction to Ambient Reh g-ab 0.67 C/mw Anode 2 ina ys 188220: ars 188221: Ala i Cathode N.C. ELECTRICAL CHARACTERISTICS (T,= 25 C) CHARACTERISTIC SYMBOL max, | unit | TEST CONDITIONS ot B50 5 mv ip = 10 mA Forward Voltage 1000 mV ig = 50 mA 1200 mV (p= 100 mA en en el 10 HA Va=70V Reverse Current err ne ese in aes mrs cern an fo nares eee Te 1.0 uA Vp = 100 Capacitance 40 pF Vaso, ; a ee ip2t0mA, VR*6V, Reverse Recovery Time rr 30 ns RL =100 2, Ses Test Circuit. NEC cannot assume any responsibility for any circuits shown or represent that they are tree from patent infringement. NEC Corporation 1985 92 1$S220,1SS221 NEC ascrnon sevice TYPICAL CHARACTERISTICS (T, = 25 C} FORWARD CURRENT vs. REVERSE CURRENT vs. FORWARD VOLTAGE REVERSE VOLTAGE 1000 10 59 . 500 Tag= 200 C 200 20 100 10 < 05 50 ~ 2 S02 & 10 < ol 5 50 2 o.0s 6 . 5 uo 20 2 902 S & = 10 5 00 & os & 0.005 Looe r g.002 =~ x OL =~ 9.901 0.05 0.0005 0.02 0 0002 001 0.0001 a a2 O64 06 a8 to 12 0 10 200 -300:ia# (a7 Ve - Forward Voltage--V Va~ Reverse Voltage V oO FORWARD VOLTAGE TEMPERATURE TERMINAL CAPACITANCE vs. = COEFFICIENT vs FORWARD CURRENT REVERSE VOLTAGE > 36 . 30 T : ; : fe 1.0 MHz 5 i Tan2h C 2 +4 L fom = t mf & | i 2 : | ro | ' F nw | | | oe i | g : 20 ses 5 20 : MA i 8 e is & 5] e oN = S s 2 i io E = 16 B 10 : 3S ee : > | i 5 LL 5 | g Pd Lop i 5 ae t : i i . : 14 i i f+ 0 L L 3 t i 5 0102 05 10 20 6010 20 60 100 1 2 4 6 810 20 30 Ip-- Forward Current ~mA Va~ Reverse VoltageV 93 NEC tctnon vevice 1$S220,1SS221 SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery time : ty, Circuit Capacitance Cs1 pF r= ey ig=10 mA t FT \ 1 sampling | is ' pulse t tho | Generator Loaf eee Ri 50 t r Buty Cycles 5 % tp $0.35 ns t: F i ing OT ty Vo VR t VE input signal output signal Test circuit Wave forms Ie = 10 mA, Va =6.0V DC-1056A March 1991 M Printed in Japan 34