®
N e v e r s t o p t h i n k i n g .
Version 2.0, 11 Jan 2012
Edition 2012-1-11
Published by
Infineon Technologies AG
81726 München, Germany
©Infineon Technologies AG 1/11/12.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approvalof InfineonTechnologies,if afailure ofsuchcomponents canreasonably beexpectedto causethe failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS®, CoolSET®are trademarks of Infineon Technologies AG.
CoolSET®-F3R80
ICE3AR2280CJZ
Revision History: 2012-1-11 Datasheet Version 2.0
Previous Version: 1.0
19 Revise typo in tie up resistor at BRL pin to disable brownout feature.
Type Package Marking VDS FOSC RDSon
1)
1) typ @ T=25°C
230VAC ±15%2)
2) Calculated maximum input power rating at Ta=50°C, Ti=125°C and without copper area as heat sink.
85-265 VAC2)
ICE3AR2280CJZ PG-DIP-7 3AR2280CJZ 800V 100kHz 2.26 43W 28W
®
ICE3AR2280CJZ
Version 2.0 3 11 Jan 2012
Off-Line SMPS Current Mode Controller with
integrated 800V CoolMOS®and Startup cell
(brownout & CCM) in DIP-7
PG-DIP7
CVCC
CBulk
Converter
DC Output
+
Snubber
Power Management
PWM Controller
Current Mode
85 ... 270 VAC
Typical Application
RSense
FBB
Control
Unit
-
CS
VCC
Startup Cell
Precise Low Tolerance Peak
Current Limitation
Drain
CoolSET®-F3R80
(Brownout & CCM)
CoolMOS®
GND
RBO2
RBO1 Active Burst Mode
Auto Restart/ Latch
Mode
Brownout mode
BRL
Rsel
Features
800V avalanche rugged CoolMOS®with Startup Cell
Active Burst Mode for lowest Standby Power
Slope compensation for CCM operation
Selectable entry and exit burst mode level
100kHz internally fixed switching frequency with
jittering feature
Auto Restart Protection for Over load, Open Loop,
VCC Under voltage & Over voltage and Over
temperature
External latch enable pin and fast AC reset
Over temperature protection with 50°Chysteresis
Built-in 10ms Soft Start
Built-in 40ms blanking time for short duration peak
power
Propagation delay compensation for both maximum
load and burst mode
Brownout feature
BiCMOS technology for low power consumption and
wide VCC voltage range
Soft gate drive with 50Wturn on resistor
Description
The ICE3ARxx80CJZ is an enhanced version of
ICE3ARxx80JZ (CoolSET®-F3R80). The PWM controller
is based on F3R80 with new and enhanced features. The
major new features include slope compensation for CCM
operation and fast AC reset after latch enabled. The
major enhanced features include fixed voltage brownout
detect and voltage detect for the burst selection. In
particular it is a device running at 100KHz, implemented
with brownout features, installing 800V CoolMOS®with
startup cell and packaged into DIP-7. It targets for the low
power SMPS with increased MOSFET voltage margin
requirement such as Off-Line battery adapters, DVD R/
W, DVD Combi, Blue ray, set top box, auxiliary power
supply for PC and server, etc. In summary, this enhanced
ICE3ARxx80CJZ provides 800V MOSFET, lowest
standby power, CCM opeation, selectable burst level,
brownout feature, maximum power compensated for both
maximum and standby load, low EMI with frequency
jittering and soft gate drive, built-in and flexible
protections, etc. Therefore, ICE3ARxx80CJZ is a
complete solution for the low power SMPS application.
Product Highlights
800V avalanche rugged CoolMOS®with startup cell
CCM and DCM operation with slope compensation
Active Burst Mode to reach the lowest Standby Power <100mW
Active burst mode with selectable entry and exit burst mode level
Frequency jitter and soft driving for low EMI
Brownout feature
Latch enable and fast AC reset
Auto Restart protection for over load, over temperature and over voltage
Pb-free lead plating; RoHS compliant
CoolSET®-F3R80
ICE3AR2280CJZ
Table of Contents Page
Version 2.0 4 11 Jan 2012
1 Pin Configuration and Functionality .............................6
1.1 Pin Configuration with PG-DIP-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
1.2 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Representative Blockdiagram ..................................7
3 Functional Description ........................................8
3.1 Introduction ..................................................8
3.2 PowerManagement............................................8
3.3 Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3.1 PWM-OP .................................................10
3.3.2 PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.3.3 Slope Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.4 StartupPhase ...............................................11
3.5 PWMSection ................................................12
3.5.1 Oscillator .................................................12
3.5.2 PWM-LatchFF1............................................12
3.5.3 GateDriver ...............................................13
3.6 CurrentLimiting ..............................................13
3.6.1 Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.6.2 Combined OPP curve considering Propagation Delay and Slope Compen-
sation 14
3.7 ControlUnit .................................................15
3.7.1 Active Burst Mode (patented) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.1.1 Selectable burst entry level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.1.2 Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.1.3 Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.1.4 Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.2 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3.7.2.1 Vcc OVP, OTP, external protection enable and Vcc under voltage . . .18
3.7.2.2 Over load, open loop protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
3.7.3 BrownoutMode ............................................18
3.7.4 FastACreset..............................................19
4 Electrical Characteristics .....................................21
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.2 OperatingRange .............................................22
4.3 Characteristics ...............................................22
4.3.1 SupplySection.............................................22
4.3.2 Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.3 PWMSection ..............................................23
4.3.4 SoftStarttime .............................................23
4.3.5 ControlUnit ...............................................24
4.3.6 CurrentLimiting ............................................25
CoolSET®-F3R80
ICE3AR2280CJZ
Version 2.0 5 11 Jan 2012
4.3.7 CoolMOS®Section .........................................25
5 CoolMOS®Perfromance Characteristic ..........................26
6 Input Power Curve ...........................................28
7 Outline Dimension ...........................................29
8 Marking ....................................................30
9 Schematic for recommended PCB layout ........................31
Version 2.0 6 11 Jan 2012
CoolSET®-F3R80
ICE3AR2280CJZ
Pin Configuration and Functionality
1 Pin Configuration and Functionality
1.1 Pin Configuration with PG-DIP-7
Figure 1 Pin Configuration PG-DIP-7 (top view)
1.2 Pin Functionality
BRL (Brownout, fast AC Reset & Latch enable)
The BRL pin combines the functions of brownout, fast
AC reset and the external latch enable. The brownout
feature is to stop the switching pulse when the input
voltage is dropped to lower than 1V. The Fast AC reset
feature is to recover from latch feature when the
voltage of BRL pin has a rising rate of <1.33V/ms from
0.4V to 1V. The external latch enable function is an
external access to stop the gate switching and force the
IC to enter latch mode. It is triggered by pulling the pin
voltage to less than 0.4V.
FBB (Feedback & Burst entry select)
The FBB pin combines the feedback function and the
burst entry/exit control. The regulation information is
provided by the FBB pin to the internal Protection Unit
and the internal PWM-Comparator to control the duty
cycle. The FBB-signal is the only control signal in case
of light load at the Active Burst Mode. The burst entry
select provides an access to select the entry/exit burst
mode level.
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the shunt resistor inserted in the source of the
integrated CoolMOS®. If CS reaches the internal
threshold of the Current Limit Comparator, the Driver
output is immediately switched off. Furthermore the
current information is provided for the PWM-
Comparator to realize the Current Mode operation.
Drain (Drain of integrated CoolMOS®)
The Drain pin is the connection to the Drain of the
integrated CoolMOS®.
VCC (Power Supply)
The VCC pin is the power supply of the IC. The voltage
operating range is between 10.5V and 24.7V.
GND (Ground)
The GND pin is the ground of the controller.
Pin Symbol Function
1 BRL Brownout, fast AC Reset &
Latch enable
2 FBB Feedback & Burst entry/exit con-
trol
3 CS Current Sense/
800V CoolMOS®Source
4 n.c. not connected
5 Drain 800V CoolMOS®Drain
6 - (no pin)
7 VCC Controller Supply Voltage
8 GND Controller Ground
Package PG-DIP-7
1
7
8
4
3
2
5
GNDBRL
FBB
CS
VCC
n.c. Drain
CoolSET®-F3R80
ICE3AR2280CJZ
Representative Blockdiagram
Version 2.0 7 11 Jan 2012
2 Representative Blockdiagram
Figure 2 Representative Blockdiagram
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 8 11 Jan 2012
3 Functional Description
All values which are used in the functional description
are typical values. For calculating the worst cases the
min/max values which can be found in section 4
Electrical Characteristics have to be considered.
3.1 Introduction
ICE3ARxx80CJZ brownout and CCM 800V version is
an enhanced version of the CoolSET®-F3R80. The
major new and enhanced features include slope
compensation for CCM operation, fast AC reset after
latch enabled, fixed voltage brownout detect and
voltage detect for the burst selection. It is particular
good for high voltage margin low power SMPS
application such as auxiliary power supply for PC and
server. The major characteristics are that the IC is
developed with 800V CoolMOS®with start up cell,
having adjustable brownout feature, running at 100KHz
switching frequency, CCM operation and packed in
DIP-7 package.
The features include BiCMOS technology to reduce
power consumption and increase the Vcc voltage
range, cycle by cycle current mode control, built-in
10ms soft start to reduce the stress of switching
elements during start up, built-in 40ms for short period
of peak power before entering protection, active burst
mode for lowest standby power, propagation delay
compensation for close power limit between high line
and low line which also takes into consideration of
slope compensation, frequency jittering for low EMI
performance, the built-in auto-restart mode protections
for open loop, over load, Vcc OVP, Vcc under voltage,
and latch enable feature etc.
The other features include narrowing the feedback
voltage swing to 0.3V (from 0.5V) during burst mode so
that the output voltage ripple can be reduced by 40%,
reduction of the fast voltage fall time of the MOSFET by
increasing the soft turn-on time and addition of 50W
turn-on resistor, faster start up time by optimizing the
Vcc capacitor to 10uF and over temperature protection
with 50°C hysteresis.
The new features include slope compensation for
stable operation in CCM mode when duty is larger than
0.5, fixed voltage triggering for the bronwout feature for
easier design, voltage levels select for entry/exit burst
level, fast AC reset fto reset the latch feature, etc.
In summary, the CoolSET®ICE3ARxx80CJZ provides
good voltage margin of MOSFET, lowest standby
power, flexible burst level, CCM operation, reduced
output ripple during burst mode, accurate power limit
for both maximum power and burst power, low EMI with
frequency jittering and soft gate drive, built-in and
flexible protections, etc. Therefore, CoolSET®
ICE3ARxx80CJZ is a complete solution for the low
power SMPS application.
3.2 Power Management
Figure 3 Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC. When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
connected to the VCC pin. This VCC charge current is
controlled to 1.0mA by the Startup Cell. When the VVCC
exceeds the on-threshold VCCon=17V the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on, a hysteresis start up voltage is implemented.
The switch-off of the controller can only take place
when VVCC falls below 10.5V after normal operation
was entered. The maximum current consumption
before the controller is activated is about 210mA.
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit is switched off and the soft start counter
is reset. Thus it ensures that at every startup cycle the
soft start starts at zero.
The internal bias circuit is switched off if Latched Off
Mode or Auto Restart Mode is entered. The current
consumption is then reduced to 420mA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require re-cycling the AC line. In case
Latched Off Mode is entered, VCC needs to be lowered
below 8V or having AC fast reset triggered to reset the
Internal Bias
Voltage
Reference
Power M anagem ent
Latched O ff M ode
Reset; VVC C < 8V or
AC fast reset is
triggered
5.0V
Latched Off
Mode
Undervoltage Lockout
17V
10.5V
Power-Down Reset
Active Burst
Mode
Auto Restart
Mode
Startup Cell
VCCDrain
CoolM O S®
Soft Start block
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 9 11 Jan 2012
Latched Off Mode. This is done usually by re-cycling
the AC line.
When Active Burst Mode is entered, the internal Bias is
switched off most of the time but the Voltage Reference
is kept alive in order to reduce the current consumption
below 620mA.
3.3 Improved Current Mode
Figure 4 Current Mode
Current Mode means the duty cycle is controlled by the
slope of the primary current. This is done by comparing
the FBB signal with the amplified current sense signal.
Figure 5 Pulse Width Modulation
In case the amplified current sense signal exceeds the
FBB signal the on-time ton of the driver is finished by
resetting the PWM-Latch (Figure 5).
The primary current is sensed by the external series
resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
T2 is opened so that the voltage ramp can start.
Figure 6 Improved Current Mode
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FBB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by
the inverted VOSC signal, the Gate Driver is switched-off
until it reaches approximately 156ns delay time (Figure
x3.25
PWM OP
Improved
Current Mode
0.6V
C8 PWM-Latch
CS
FBB R
S
Q
Q
Driver
Soft-Start Comparator
t
FBB
Amplified Current Signal
ton
t
0.6V
Driver
PWMOP
0.6V
10k
Oscillator
C8
T2R1
FBB
PWM-Latch
V1
GateDriver
VoltageRamp
VOSC
Soft-Start Comparator
timedelay
circuit (156ns)
X3.25
PWMComparator
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 10 11 Jan 2012
7). It allows the duty cycle to be reduced continuously
till 0% by decreasing VFBB below that threshold.
Figure 7 Light Load Conditions
3.3.1 PWM-OP
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
RSense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
amplified with a gain of 3.25 by PWM OP. The output
of the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWM-
Comparator C8 and the Soft-Start-Comparator (Figure
8).
3.3.2 PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS®with the feedback
signal VFBB (Figure 8). VFBB is created by an external
optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
information of the feedback circuitry. When the
amplified current signal of the integrated CoolMOS®
exceeds the signal VFBB the PWM-Comparator
switches off the Gate Driver.
Figure 8 PWM Controlling
3.3.3 Slope Compensation
Due to the sub harmonic oscillation of CCM operation
when duty cycle is larger than 50%, the slope
compensation is added.
The slope Mc; 50mV/ms is added to the current sense
pin when gate is on.
During burst mode operation, the Mc slope is shut
down and no slope added into the current sense signal.
This can save the power consumption at burst mode.
Figure 9 Slope compesnation
t
t
VOSC
0.6V
FBB
t
max.
Duty Cycle
Gate
Driver
Voltage
Ramp
156ns time delay
X3.25
PWM OP
Improved
Current Mode
PWM Comparator
CS
Soft-Start Comparator
5V
C8
0.6V
FBB
Optocoupler
RFB
PWM-Latch
x3.25
PWMOP
Gate Drive
signal
C8
0.62V
M
c=50mV/us
Slope
compensation
PWM
comparator
S5
5.0V
10k
D21pF
LEB
180/220ns
Rslope
FB
Active burst
mode
PWMlatch
CS
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 11 11 Jan 2012
3.4 Startup Phase
Figure 10 Soft Start
In the Startup Phase, the IC provides a Soft Start
period to control the primary current by means of a duty
cycle limitation. The Soft Start function is a built-in
function and it is controlled by an internal counter.
.
Figure 11 Soft Start Phase
When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode (Figure 11).
The function is realized by an internal Soft Start
resistor, an current sink and a counter. And the
amplitude of the current sink is controlled by the
counter (Figure 12).
Figure 12 Soft Start Circuit
After the IC is switched on, the VSoftS voltage is
controlled such that the voltage is increased step-
wisely (32 steps) with the increase of the counts. The
Soft Start counter would send a signal to the current
sink control in every 300ms such that the current sink
decrease gradually and the duty ratio of the gate drive
increases gradually. The Soft Start will be finished in
10ms (tSoft-Start) after the IC is switched on. At the end of
the Soft Start period, the current sink is switched off.
Within the soft start period, the duty cycle is increasing
from zero to maximum gradually (see Figure 13).
Figure 13 Gate drive signal under Soft-Start Phase
Soft-Start
Com parator
Soft Start
&
G7
C7 Gate Driver
0.6V
x3.25
PW M O P
CS
Soft Start counter
Soft Start
Soft Start finish
SoftS
VSo ftS
VSo ftS 2
VSo ftS 1
5V
RSoftS
Soft Start
Counter I
2I
4I
SoftS
8I
32I
t
VSOFTS3 2
VSoftS
Gate
Driver
t
tSoft-Start
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 12 11 Jan 2012
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during normal Auto Restart.
Figure 14 Start Up Phase
The Start-Up time tStart-Up before the converter output
voltage VOUT is settled, must be shorter than the Soft-
Start Phase tSoft-Start (Figure 14). By means of Soft-Start
there is an effective minimization of current and voltage
stresses on the integrated CoolMOS®, the clamp circuit
and the output rectifier and it helps to prevent
saturation of the transformer during Start-Up.
3.5 PWM Section
Figure 15 PWM Section Block
3.5.1 Oscillator
The oscillator generates a fixed frequency of 100KHz
with frequency jittering of ±4% (which is ±4KHz) at a
jittering period of 4ms.
A capacitor, a current source and current sink which
determine the frequency are integrated. The charging
and discharging current of the implemented oscillator
capacitor are internally trimmed in order to achieve a
very accurate switching frequency. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 100KHz ± 4KHz at period of 4ms.
3.5.2 PWM-Latch FF1
The output of the oscillator block provides continuous
pulse to the PWM-Latch which turns on/off the
integrated CoolMOS®. After the PWM-Latch is set, it is
reset by the PWM comparator, the Soft Start
comparator or the Current -Limit comparator. When it is
in reset mode, the output of the driver is shut down
immediately.
t
t
VSoftS
t
VSOFTS32
4.5V
tSoft-Start
VOUT
VFB
VOUT
tStart-Up
Oscillator
Duty Cycle
max
Gate Driver
0.75
Clock
&
G9
1
G8
PWM Section
FF1
R
S
Q
Soft Start
Comparator
PWM
Comparator
Current
Limiting
CoolMOS®
Gate
Frequency
Jitter
Soft Start
Block
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 13 11 Jan 2012
3.5.3 Gate Driver
Figure 16 Gate Driver
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. This is done by reducing
the switch on slope when exceeding the integrated
CoolMOS®threshold. This is achieved by a slope
control of the rising edge at the driver’s output (Figure
17) and adding a 50Wgate turn on resistor (Figure 16).
Thus the leading switch on spike is minimized.
Figure 17 Gate Rising Slope
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage.
During power up, when VCC is below the undervoltage
lockout threshold VVCCoff, the output of the Gate Driver
is set to low in order to disable power transfer to the
secondary side.
3.6 Current Limiting
Figure 18 Current Limiting Block
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS®is sensed
via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the pin CS. If the voltage
VSense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
CoolMOS®with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
output power can be reduced to minimal. This
compensation applies to both the peak load and burst
mode.
In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
Blanking (LEB) is integrated in the current sense path
for the comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate
G6 if Active Burst Mode is entered. When it is activated,
the current limiting is reduced to Vcsth_burst. This voltage
level determines the maximum power level in Active
Burst Mode.
VCC
1
PWM-Latch
CoolMOS®
Gate Driver
Gate
50
t
(internal)
VGate
4.6V
typ. t =160ns
Current Limiting
C10
C12
&
G6
Propagation-Delay
Compensation
Vcsth
PWM Latch
FF1
10k D1 1pF
PWM-OP
Propagation-Delay
Compensation-Burst
VCSth_burst
CS
LEB
220ns
LEB
180ns
S4
C5
VFB_burst
FBB
or
G8
Active Burst
Mode
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 14 11 Jan 2012
3.6.1 Leading Edge Blanking
Figure 19 Leading Edge Blanking
Whenever the integrated CoolMOS®is switched on, a
leading edge spike is generated due to the primary-
side capacitances and reverse recovery time of the
secondary-side rectifier. This spike can cause the gate
drive to switch off unintentionally. In order to avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns for
normal load and tLEB = 180ns for burst mode.
3.6.2 Combined OPP curve considering
Propagation Delay and Slope
Compensation
The ICE3ARxx80CJZ has combined the propagation
delay, CCM inherit reduced power effect and the slope
compensation effect for the overcurrent control.
It employs the dynamic threshold voltage Vcsth with 2
steps slope compensation to achieve the closed over
current for whole input voltage range.
In case of overcurrent detection, there is always
propagation delay to switch off the integrated
CoolMOS®. An overshoot of the peak current Ipeak is
induced to the delay, which depends on the ratio of dI/
dt of the peak current (Figure 20).
Figure 20 Current Limiting
The overshoot of Signal2 is larger than of Signal1 due
to the steeper rising waveform. This change in the
slope is depending on the AC input voltage.
Propagation Delay Compensation is integrated to
reduce the overshoot due to dI/dt of the rising primary
current. Thus the propagation delay time between
exceeding the current sense threshold Vcsth and the
switching off of the integrated CoolMOS®is
compensated over temperature within a wide input
range. Current Limiting is then very accurate.
For the inherit influence of the CCM operation, the final
Vcs can not be constant in whole line range as in DCM.
This ICE3ARxx80CJZ has implemented with 2
compensation curves for the compensation so that the
maximum power can be close. One of the curve is used
when the time range is larger than 4ms and the other is
for lower than 4ms.
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage Vcsth (Figure 21).
In case of a steeper slope the switch off of the driver is
earlier to compensate the delay.
Figure 21 Dynamic Voltage Threshold Vcsth
A typical measured Vsense vs dVsense/dt is plotted in
Figure 22 for reference.
Figure 22 Overcurrent Shutdown
t
VSense
Vcsth tLEB = 220ns/180ns
t
ISense
ILimit
tPropagation Delay
IOvershoot1
Ipeak1
Signal1Signal2
IOvershoot2
Ipeak2
t
Vcsth
VOSC
Signal1 Signal2
VSense Propagation Delay
max. Duty Cycle
off time
t
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 15 11 Jan 2012
Similarly, the same concept of propagation delay
compensation is also implemented in burst mode with
reduced level, Vcsth_burst (Figure 18). With this
implementation, the entry and exit burst mode power
can be close between low line and high line input
voltage.
3.7 Control Unit
The Control Unit contains the functions for Active Burst
Mode, Auto Restart Mode and Latch Mode. The Active
Burst Mode, Latch Mode and the Auto Restart Mode
both have internal blanking time. With the blanking
time, the IC avoids entering into those two modes
accidentally. Those buffer time is very useful for the
application which works in short duration of peak power
occasionally.
3.7.1 Active Burst Mode (patented)
To increase the efficiency of the system at light load,
the most effective way is to operate at burst mode.
Starting from CoolSET®F3, the IC has been employing
the active burst mode and it can achieve the lowest
standby power. ICE3ARxx80CJZ adopts the same
concept with some more innovative improvements to
the feature. It includes the adjustable entry burst level,
close power control between high line and low line and
the smaller output ripple during burst mode.
Most of the burst mode design in the market will
provide a fixed entry burst mode level which is a ratio
to the maximum power of the design. ICE3ARxx80CJZ
provides a more flexible level which can be selected
externally.
Propagation delay is the major contributor for the
power control variation for DCM flyback converter. It is
proved to be effective in the maximum power control.
ICE3ARxx80CJZ also apply the same concept in the
burst mode. Therefore, the entry and exit burst mode
power is also finely controlled during burst mode.
The feedback control swing during burst mode will
affect the output ripple voltage directly.
ICE3ARxx80CJZ reduces the swing to 0.3V (from
0.5V). Therefore, it would have around 40%
improvement for the output ripple.
Figure 23 Active Burst Mode
The Active Burst Mode is located in the Control Unit.
Figure 23 shows the related components.
3.7.1.1 Selectable burst entry level
The burst mode entry level can be selected by
changing the different Resistor Rsel at FBB pin. There
are 3 levels to be selected with different resistor which
are targeted for 15%, 10% and 5% of the maximum
input power. At the same time, the exit burst level are
targeted to 27%, 20% and 11% of the maximum power
accordingly. The below table is the control logic for the
entry and exit level with the FBB voltage.
Level VFBB Rsel
1VFBB< Vref1 (1.8V) < 405kW
2Vref1 (1.8V) <VFBB<Vref2 (4.0V) 685kW~ 900kW
3VFBB > Vref2 (4.0V) > 1530kW
Entry level Exit level
Level % of Pin_max VFB_burst % of Pin_max Vcsth_burst
1 5% 1.29V 11% 0.21V
2 10% 1.61V 20% 0.29V
3 15% 1.84V 27% 0.34V
C6a
3.5V
C13
4.0V
Control Unit
Internal
Bias
C6b
3.2V
&
G11
Active Burst
Mode
C5 20 ms
Blanking Time
C12
CS
Vcsth_burst
VFB_burst
G6 & FF1
FBB
Current
Limiting
Burst detect
and adjust
Rsel
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 16 11 Jan 2012
During IC first startup, the Refgood signal is logic low
when Vcc<8V. The low Refgood signal will reset the
Burst Mode level Detection latch. When the Burst Mode
Level Detection latch is low and IC is in OFF state, the
FBB resistor is isolated from the FBB pin and a current
source Isel (3.5mA) is turned on instead.
From Vcc=8V to Vcc on threshold(17V), the FBB pin
will start to charge to a voltage level associated with
Rsel resistor. When Vcc reaches Vcc on threshold, the
FBB voltage is sensed. The burst mode thresholds are
then chosen according to the FBB voltage level. The
Burst Mode Level Detection latch is then set to high.
Once the detection latch is set high, any change of the
FBB level will not change the threshold level. When
Vcc reaches Vcc on threshold, a timer of 2ms is started.
After the 2ms ends, the Isel is turned off while the FBB
resistor is connected to FBB pin (Figure 24).
Figure 24 Burst mode detect and adjust
3.7.1.2 Entering Active Burst Mode
The FBB signal is kept monitoring by the comparator
C5 (Figure 23). During normal operation, the internal
blanking time counter is reset to 0. When FBB signal
falls below VFB_burst, it starts to count. When the counter
reaches 20ms and FBB signal is still below VFB_burst, the
system enters the Active Burst Mode. This time window
prevents a sudden entering into the Active Burst Mode
due to large load jumps.
After entering Active Burst Mode, a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC to about 620mA.
It needs the application to enforce the VCC voltage
above the Undervoltage Lockout level of 10.5V such
that the Startup Cell will not be switched on
accidentally. Or otherwise the power loss will increase
drastically. The minimum VCC level during Active Burst
Mode depends on the load condition and the
application. The lowest VCC level is reached at no load
condition.
3.7.1.3 Working in Active Burst Mode
After entering the Active Burst Mode, the FBB voltage
rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors
the FBB signal. If the voltage level is larger than 3.5V,
the internal circuit will be activated; the Internal Bias
circuit resumes and starts to provide switching pulse. In
Active Burst Mode the gate G6 is released and the
current limit is reduced to Vcsth_burst (Figure 2 and
23). In one hand, it can reduce the conduction loss and
the other hand, it can reduce the audible noise. If the
load at VOUT is still kept unchanged, the FBB signal
will drop to 3.2V. At this level the C6b deactivates the
internal circuit again by switching off the Internal Bias.
The gate G11 is active again as the burst flag is set
after entering Active Burst Mode. In Active Burst Mode,
the FBB voltage is changing like a saw tooth between
3.2V and 3.5V (Figure 25).
3.7.1.4 Leaving Active Burst Mode
The FBB voltage will increase immediately if there is a
high load jump. This is observed by the comparator
C13 (Figure 23). Since the current limit is reduced to
0.21V~0.34V during active burst mode, it needs a
certain load jump to rise the FBB signal to exceed 4.0V.
At that time the comparator C5 resets the Active Burst
Mode control which in turn blocks the comparator C12
by the gate G6. The maximum current can then be
resumed to stabilize VOUT.
FBB
Selection
Logic
Vdd
Vcsth_burst
VFB_burst
Isel
Refgood
UVLO
Controlunit
S1
S2
2µs
delay
R
S
Burst mode
detectionlatch
Rsel
Compare
logic Vref1
Vref2
Rfb
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 17 11 Jan 2012
Figure 25 Signals in Active Burst Mode
3.7.2 Protection Modes
The IC provides Auto Restart mode as the major
protection feature. Auto Restart mode can prevent the
SMPS from destructive states. There are 3 kinds of
auto restart mode; normal auto restart mode, odd skip
auto restart mode and non switch auto restart mode.
Odd skip auto restart mode (Figure 26) is that there is
no detect of fault and no switching pulse for the odd
number restart cycle. At the even number of restart
cycle the fault detect and soft start switching pulses are
maintained. If the fault persists, it would continue the
auto-restart mode. However, if the fault is removed, it
can release to normal operation only at the even
number auto restart cycle .
Figure 26 Odd skip auto restart waveform
Non switch auto restart mode is similar to odd skip auto
restart mode except the start up switching pulses are
also suppressed at the even number of the restart
cycle. The detection of fault still remains at the even
number of the restart cycle. When the fault is removed,
the IC will resume to normal operation at the even
number of the restart cycle (Figure 27).
Figure 27 non switch auto restart waveform
The main purpose of the odd skip auto restart is to
extend the restart time such that the power loss during
auto restart protection can be reduced. This feature is
particularly good for smaller Vcc capacitor where the
restart time is shorter.
VFB_burst
3.5V
4.0V
VFBB
t
t
Vcsth_burst
Vcsth
VCS
10.5V
VVCC t
t
620uA
IVCC
t
3.4mA
VOUT
t
20ms Blanking Time
Current limit level
during Active Burst
Mode
3.2V
Entering
Active Burst
Mode
Blanking Timer
Leaving
Active Burst
Mode
10.5V
t
VCS
t
VVCC
17V
Fault
detected No detect Startupanddetect
No detect
10.5V
t
VCS
t
VVCC
17V
Fault
detected No detect Startupanddetect
No detect
No switching
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 18 11 Jan 2012
The following table lists the possible system failures
and the corresponding protection modes.
3.7.2.1 Vcc OVP, OTP, external protection
enable and Vcc under voltage
Figure 28 Vcc OVP, OTP, external protection
enable
Vcc OVP condition is when VVCC voltage is > 25.5V, the
IC enters into odd skip Auto Restart Mode (Figure 28).
The over temperature protection OTP is sensed inside
the controller IC. The Thermal Shutdown block keeps
on monitoring the junction temperature of the
controller. After detecting a junction temperature higher
than 130°C, the IC will enter into the non switch Auto
Restart mode. The ICE3ARxx80CJZ has also
implemented with a 50°C hysteresis. That means the
IC can only be recovered when the controller junction
temperature is dropped 50°C lower than the over
temperature trigger point (Figure 28).
The external latch enable feature can provide a
flexibility to a customer’s self-defined protection
feature. This function can be triggered by pulling down
the VBRL voltage to < 0.4V. Or it can simply trigger the
base pin of an external transistor, TLE at the BRL pin.
When this function is enabled, it will enter into latch
mode after 210ms blanking time. The gate drive is
stopped and there is no switching pulse before it is
recovered .
The Vcc undervoltage and short opto-coupler will go
into the normal auto restart mode inherently.
In case of VCC undervoltage, the Vcc voltage drops
indefinitely. When it drops below the Vcc under voltage
lock out “OFF” voltage (10.5V), the IC will turn off the
IC and the startup cell will turn on again. Then the Vcc
voltage will be charged up to UVLO “ON” voltage (17V)
and the IC turns on again provided the startup cell
charge up current is not drained by the fault. If the fault
is not removed, the Vcc will continue to drop until it hits
UVLO “OFF” voltage and the restart cycle repeats.
Short Optocoupler can lead to Vcc undervoltage
because once the opto-coupler (transistor side) is
shorted, the feedback voltage will drop to zero and
there will be no switching pulse. Then the Vcc voltage
will drop same as the Vcc undervoltage.
3.7.2.2 Over load, open loop protection
Figure 29 Over load and open loop protection
In case of Overload or Open Loop, the VFBB voltage
exceeds 4.5V which will be observed by comparator
C4. Then the built-in blanking time counter starts to
count. When it reaches 40ms, the odd skip Auto
Restart Mode is activated (Figure 29).
3.7.3 Brownout Mode
When the AC input voltage is removed, the voltage at
the bulk capacitor will fall. When it reaches a point that
the system is greater than the system allowed
maximum power, the system may go into over load
protection. However, this kind of protection is not
expected for some of the applications such as auxiliary
power for PC/server system because the output is in
hiccup mode due to over load protection (auto restart
mode). The brownout mode is to eliminate this
phenomenon. The ICE3ARxx80CJZ will sense the
VCC Over voltage Odd skip Auto Restart Mode
Over load Odd skip Auto Restart Mode
Open Loop Odd skip Auto Restart Mode
VCC Undervoltage Normal Auto Restart Mode
Short Optocoupler Normal Auto Restart Mode
Over temperature Non switch Auto Restart Mode
External protection enable Latch Mode
Voltage
Reference
Control Unit
Auto Restart
Mode Reset
V
VCC < 10.5V
Latch
Enable
Signal
TLE
C9
0.4V
Stop
gate
drive
Spike
Blanking
30µs
Thermal Shutdown
Tj>130°C
BRL
Auto Restart
mode
C2 120µsblanking
time
25.5V
210µsblanking
time Latch
mode
VCC
C4
4.5V
Control Unit
Auto
Restart
Mode
FBB 40ms
Blanking
Time
RFB
5.0V
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 19 11 Jan 2012
input AC voltage to the BRL pin by an AC hold up circuit
and 2 potential divider resistors.
In some applications, it needs the IC to continue to
work for certain time when AC voltage is disconnected.
After that, the IC will stop working. If the brownout
connection is taping from the bulk capacitor, the delay
time is too short. Therefore, it needs the brown out
detetction at the AC input (Figure 30). The CBR0 is
charged up by AC line voltage through RBO0, which is
then fed to BRL pin through a voltage divider. When the
AC voltage drops, if the BRL pin voltage is lower than
1V for 270ms, the ICE3ARxx80CJZ will go into
brownout mode. If, however, the AC line goes up again,
the BRL voltage will be larger than 1.25V and the
ICE3ARxx80CJZ will leave brown out mode and
recover to normal operation.
The brownout mode is default “ON” during the system
starts up. When the system is powered up, the bulk
capacitor and the Vcc capacitor are charged up at the
same time. When the Vcc voltage is charged to >8V,
the brownout circuit starts to operate (Figure 30). Since
the UVLO is still at low level as the Vcc voltage does
not reach the 17V UVLO “ON” voltage. The NAND gate
G20 will release a low signal to the flip flop FF2 and the
negative output of FF2 will release a high signal. Hence
it is in brownout mode during the system starts up.
Figure 30 Brownout detection circuit
Once the system enters the brownout mode, there will
be no switching pulse and the IC enters into another
type auto-restart mode which is similar to the protection
auto-restart mode but the IC will monitor the BRL signal
in each restart cycle (Figure 31).
Figure 31 Brownout mode waveform
If the brownout feature is not needed, it needs to tie the
BRL pin to the Vcc pin through a current limiting
resistor, 5MW~10MW. The BRL pin cannot be in
floating condition.
3.7.4 Fast AC reset
During normal operation, the ICE3ARxx80CJZ can be
latched by pulling down the BRL voltage below 0.4V for
210ms. There are 2 condtions to reset the latch feature.
The first one is to pull down the Vcc voltage to below
8V. However, the Vcc drop would take quite a long time
if it is by normal AC power down. The second one is to
have a slow rise time of the BRL voltage from 0.4V to
1V for at least 450ms after the BRL pin is pulled down.
This timing can be achieved by the AC recycle. And it
is also called the fast AC reset (Figure 32).
Figure 32 Latch and fast AC reset
Figure 33 shows different latch and reset cases.
Case a : not latched (solid line); the timing below 0.4V
is 150ms and is less than 210ms.
C1a
Control Unit
Brownout
mode
BRL
RBO1
RBO2
Vac
UVLO
Q
R
S
FF2
G20
G21
C1b
Q
1.25V
1V
RBO0
CBR0
Blanking Time
270µs
10.5V
t
VCS
t
VVCC
17V
Brownout
detected Startup and detect BBL voltage
Control Unit
RBO1
RBO2
Vac
RBO0
CBR0
Latch
Enable
Signal
TLE
C3
0.4V
Latch
Mode
Latch
Reset
C2a
C2b
0.4V
Blanking
time 450µs
&
1V
C11
8V
Vcc
G3
G2
Blankingtime
210us
BRL
CoolSET®-F3R80
ICE3AR2280CJZ
Functional Description
Version 2.0 20 11 Jan 2012
Case b : latched (dashed line); the timing below 0.4V is
450ms which is larger than 210ms. No latch reset as the
rise time from 0.4V to 1V is 300ms which is less than
450ms.
Case c : latched and reset (dotted line); the timing
below 0.4V is 710ms which is larger than 210ms. But the
rise time from 0.4V to 1V is 560ms which is larger than
the latch reset blanking time of 450ms.
Figure 33 Latch and fast AC reset example
0.4V
t
VBRL
1V
150µs
Not latched (a)
450µs300µs
560µs
Latched (b)
Latched and reset (c)
710µs
CoolSET®-F3R80
ICE3AR2280CJZ
Electrical Characteristics
Version 2.0 21 11 Jan 2012
4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit. Ta=25°C unless otherwise specified.
Parameter Symbol Limit Values Unit Remarks
min. max.
Drain Source Voltage VDS - 800 V
Pulse drain current, tplimited by Tjmax ID_Puls - 4.9 A
Avalanche energy, repetitive tAR limited by
max. Tj=150°C1)
1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
EAR - 0.047 mJ
Avalanche current, repetitive tAR limited by
max. Tj=150°C
IAR - 1.5 A
VCC Supply Voltage VVCC -0.3 27 V
FBB Voltage VFBB -0.3 5.5 V
BRL Voltage VBRL -0.3 5.5 V
CS Voltage VCS -0.3 5.5 V
Junction Temperature Tj-40 150 °C Controller & CoolMOS®
Storage Temperature TS-55 150 °C
Thermal Resistance
Junction -Ambient
RthJA - 96 K/W
Soldering temperature, wavesoldering
only allowed at leads
Tsold - 260 °C 1.6mm (0.063in.) from
case for 10s
ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2)
2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kWseries resistor)
CoolSET®-F3R80
ICE3AR2280CJZ
Electrical Characteristics
Version 2.0 22 11 Jan 2012
4.2 Operating Range
Note: Within the operating range the IC operates as described in the functional description.
4.3 Characteristics
4.3.1 Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJfrom 25 °C to 125 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 17 V is assumed.
Parameter Symbol Limit Values Unit Remarks
min. max.
VCC Supply Voltage VVCC VVCCoff 24.7 V Max value limited due to Vcc OVP
Junction Temperature of
Controller
TjCon -25 130 °C Max value limited due to thermal
shut down of controller
Junction Temperature of
CoolMOS®
TjCoolMOS -25 150 °C
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Start Up Current IVCCstart - 210 300 mAVVCC =16V
VCC Charge Current IVCCcharge1 - - 5.0 mA VVCC = 0V
IVCCcharge2 0.55 1.0 1.60 mA VVCC = 1V
IVCCcharge3 0.38 0.75 - mA VVCC =16V
Leakage Current of
Start Up Cell and CoolMOS®
IStartLeak - 0.2 50 mAVDrain = 650V
at Tj=100°C 1)
1) The parameter is not subjected to production test - verified by design/characterization
Supply Current with
Inactive Gate IVCCsup1 - 1.9 3.2 mA
Supply Current with Active Gate IVCCsup2 - 3.4 4.8 mA IFBB = 0A
Supply Current in
Latched Off Mode with Inactive
Gate
IVCClatch - 420 - mAIFBB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart - 420 - mAIFBB = 0A
Supply Current in Active Burst
Mode with Inactive Gate IVCCburst1 - 620 950 mAVFBB = 2.5V
IVCCburst2 - 620 950 mAVVCC = 11.5V, VFBB =
2.5V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VVCCon
VVCCoff
VVCChys
16.0
9.8
-
17.0
10.5
6.5
18.0
11.2
-
V
V
V
CoolSET®-F3R80
ICE3AR2280CJZ
Electrical Characteristics
Version 2.0 23 11 Jan 2012
4.3.2 Internal Voltage Reference
4.3.3 PWM Section
4.3.4 Soft Start time
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Trimmed Reference Voltage VREF 4.90 5.00 5.10 V measured at pin FBB
IFBB = 0A
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Fixed Oscillator Frequency fOSC1 87 100 113 kHz
fOSC2 92 100 108 kHz Tj= 25°C
Frequency Jittering Range fjitter -±4.0 -kHz Tj= 25°C
Frequency Jittering period Tjitter - 4.0 - ms Tj= 25°C
Max. Duty Cycle Dmax 0.70 0.75 0.80
Min. Duty Cycle Dmin - - 0 VFBB < 0.3V
PWM-OP Gain AV3.17 3.25 3.33
Voltage Ramp Offset VOffset-Ramp - 0.60 - V
VFBB Operating Range Min
Level
VFBmin - 0.7 - V
VFBB Operating Range Max
level
VFBmax - - 4.4 V dVsense / dt= 0.134V/ms
, limited by Comparator
C41)
1) The parameter is not subjected to production test - verified by design/characterization
FBB Pull-Up Resistor RFB 9.0 15.4 22.0 kW
Slope Compensation rate MC45 50 55 mV/ms CS=0V
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Soft Start time tSS - 10 - ms
CoolSET®-F3R80
ICE3AR2280CJZ
Electrical Characteristics
Version 2.0 24 11 Jan 2012
4.3.5 Control Unit
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Brownout reference voltage for
comparator C1a
VBO_L 1.14 1.25 1.36 V
Brownout reference voltage for
comparator C1b
VBO_E 0.91 1 1.09 V
Leakage current of BRL pin Ileakage -0.5 - 0.5 mA
Blanking time to enter brownout mode VBKC1b 190 270 310 ms
Fast AC reset voltage for comparator
C2a
VC2a 0.3 0.4 0.5 V
Fast AC reset voltage for comparator
C2b
VC2b 0.91 1 1.09 V
Blanking time for comparator C2a VBKC2a 315 450 585 ms
Charging current to select burst mode Isel 2.8 3.5 4.2 mA
Burst mode selection reference
voltage
Vref1 1.69 1.80 1.91 V
Vref2 3.78 4.00 4.22 V
Over Load Limit for Comparator C4 VFBC4 4.40 4.50 4.72 V
Active Burst Mode
Entry level for
Comparator C5
15% Pin_max VFB_burst1 1.77 1.84 1.91 V Vfbb>Vref2
10% Pin_max VFB_burst2 1.50 1.61 1.72 V Vref1<Vfbb<Vref2
5% Pin_max VFB_burst3 1.20 1.29 1.38 V Vfbb<Vref1
Active Burst Mode High Level for
Comparator C6a
VFBC6a 3.35 3.50 3.65 V In Active Burst Mode
Active Burst Mode Low Level for
Comparator C6b
VFBC6b 3.06 3.20 3.34 V
Active Burst Mode Level for
Comparator C9
VFBC9 3.85 4.00 4.15 V
Overvoltage Detection Limit for
Comparator C2
VVCCOVP 24.7 25.5 26.3 V
Latch enable reference voltage for
Comparator C3
VLE 0.3 0.4 0.5 V
Built-in Blanking Time to enter Latch
Mode
tBK_latch 140 210 295 ms
Thermal Shutdown1) TjSD 130 140 150 °C Controller
Hysteresis for thermal Shutdown1) TjSD_hys - 50 - °C
Built-in Blanking Time for Overload
Protection
tBK - 40 - ms
Built-in Blanking Time for entering
Active Burst Mode
tBK_burst - 20 - ms
Spike Blanking Time for Vcc OVP tSpike - 150 - ms
CoolSET®-F3R80
ICE3AR2280CJZ
Electrical Characteristics
Version 2.0 25 11 Jan 2012
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP.
4.3.6 Current Limiting
4.3.7 CoolMOS®Section
1) The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown
temperature refers to the junction temperature of the controller.
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Peak Current Limitation Vcsth1 0.69 0.73 0.77 V dVsense / dt= 0.41V/ms
Vcsth2 0.72 0.76 0.80 V dVsense / dt= 0.134V/ms
Peak Current
Limitation in Active
Burst Mode
27% Pin_max Vcsth_burst1 0.313 0.34 0.368 V Vfbb>Vref2
20% Pin_max Vcsth_burst2 0.264 0.29 0.320 V Vref1<Vfbb<Vref2
11% Pin_max Vcsth_burst3 0.184 0.21 0.238 V Vfbb<Vref1
Leading Edge
Blanking
Normal mode tLEB_normal - 220 - ns
Burst mode tLEB_burst - 180 - ns
CS Input Bias Current ICSbias -1.5 -0.2 - mAVCS =0V
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Drain Source Breakdown Voltage V(BR)DSS 800
870
-
-
-
-
V
V
Tj= 25°C
Tj= 110°C1)
Drain Source On-Resistance RDSon -
-
-
2.26
5.02
6.14
2.62
5.81
7.10
W
W
W
Tj= 25°C
Tj=125°C1)
Tj=150°C1)
at ID= 0.81A
1) The parameter is not subjected to production test - verified by design/characterization
Effective output capacitance, energy
related
Co(er) - 16.3 - pF VDS = 0V to 480V
Rise Time trise - 302)
2) Measured in a Typical Flyback Converter Application
- ns
Fall Time tfall - 302) - ns
CoolSET®-F3R80
ICE3AR2280CJZ
CoolMOS®Perfromance Characteristic
Version 2.0 26 11 Jan 2012
5 CoolMOS®Perfromance Characteristic
Figure 34 Safe Operating Area (SOA) curve for ICE3AR2280CJZ
Figure 35 SOA temperature derating coefficient curve
CoolSET®-F3R80
ICE3AR2280CJZ
CoolMOS®Perfromance Characteristic
Version 2.0 27 11 Jan 2012
Figure 36 Power dissipation; Ptot=f(Ta)
Figure 37 Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA
CoolSET®-F3R80
ICE3AR2280CJZ
Input Power Curve
Version 2.0 28 11 Jan 2012
6 Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below;
Vin=85Vac~265Vac (Figure 38) and Vin=230Vac+/-15% (Figure 39). The curves are derived based on a typical
discontinuous mode flyback model which considers either 60% maximum duty ratio or 150V maximum secondary
to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink for the device.
The input power already includes the power loss at input common mode choke, bridge rectifier and the
CoolMOS.The device saturation current (ID_Puls @ Tj=125°C) is also considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 38),
operating temperature is 50°C, estimated efficiency is 85%, then the estimated output power is 23W (28W * 85%).
Figure 38 Input power curve Vin=85~265Vac; Pin=f(Ta)
Figure 39 Input power curve Vin=230Vac+/-15%; Pin=f(Ta)
CoolSET®-F3R80
ICE3AR2280CJZ
Outline Dimension
Version 2.0 29 11 Jan 2012
7Outline Dimension
Figure 40 PG-DIP-7 (Pb-free lead plating Plastic Dual-in-Line Outline)
PG-DIP-7
(Plastic Dual In-Line Outline)
CoolSET®-F3R80
ICE3AR2280CJZ
Marking
Version 2.0 30 11 Jan 2012
8 Marking
Figure 41 Marking for ICE3AR2280CJZ
Marking
CoolSET®-F3R80
ICE3AR2280CJZ
Schematic for recommended PCB layout
Version 2.0 31 11 Jan 2012
9 Schematic for recommended PCB layout
Figure 42 Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET (refer to Figure 42):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of
IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 42):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
CoolSET®-F3R80
ICE3AR2280CJZ
Schematic for recommended PCB layout
Version 2.0 32 11 Jan 2012
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and
reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through
the sensitive components such as the primary controller, IC11.
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus und uns ständig
zu verbessern.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
you will be convinced.
h t t p : / / w w w . i n f i n e o n . c o m
Total Quality Management
Published by Infineon Technologies AG
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
ICE3AR2280CJZXKLA1 ICE3AR2280CJZ