MIG200J6CMB1W - Mitsubishi Electric Semiconductor

MIG200J6CMB1W

2004-10-01 1/10

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>

MIG200J6CMB1W (600V/200A 6in1)

High Power Switching Applications

Motor Control Applications

• Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,

over-current, under-voltage and over-temperature) into a single package.

• The electrodes are isolated from the case

• Low thermal resistance

• VCE (sat) = 2.0 V (typ.)

• UL recognized: File No.E87989

• Weight: 385 g (typ.)

Equivalent Circuit

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. I N (V)

8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)

15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)

16 19 20

N P

18 17 14 1315 4 3 2 18 7 6 5 12 11 10 9

GNDIN FO VD

VSOUTGND

GND IN FO VD

VSOUTGND

GND IN FO VD

VSOUT GND

GND IN FO VD

VS OUTGND

GND IN FO VD

VSOUT GND

GND IN FO VD

VS OUT GND

UV W

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Package Dimensions

Unit: mm

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)

7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)

13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y)

19. IN (Z) 20. GND (L)

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Signal Terminal Layou t

Unit: mm

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)

7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)

13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y)

19. IN (Z) 20. GND (L)

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Maximum Ra tings (Tj = 25°C )

Stage Characteristics Condition Symbol Rating Unit

Supply voltage P-N Power terminal VCC 450 V

Collector-emitter voltage ⎯ V

CES 600 V

Coll e ctor curren t Tc = 25°C, DC IC 200 A

Forward current Tc = 25°C, DC IF 200 A

Collector power dissipation Tc = 25°C, DC PC 1000 W

Inverter

Junction temperature ⎯ Tj 150 °C

Control supply voltage VD-GND Terminal VD 20 V

Input voltage IN-GND Terminal VIN 20 V

Fault output voltage FO-GND Terminal VFO 20 V

Control

Fault output current FO sink current IFO 10 mA

Operating temperature ⎯ Tc −20~+100 °C

Storage temperature Range ⎯ Tstg −40~+125 °C

Isolation voltage AC 1 min VISO 2500 V

Module

Screw torque M5 ⎯ 3 N•m

Electrical Characteristics

1. Inverter stage

Characteristics Symbol Test Condition Min Typ. Max Unit

Tj = 25°C ⎯ ⎯ 1

Coll e ctor cut-off curr e nt ICES V

CE = 600 V Tj = 125°C ⎯ ⎯ 10

mA

Tj = 25°C 1.7 2.0 2.4

Collector-emitter saturation voltage VCE ( sat) VD = 15 V,

IC = 200 A,

VIN = 15 V → 0 V Tj = 125°C ⎯ 2.2 ⎯ V

Forward voltage VF I

F = 200 A, Tj = 25°C ⎯ 2.2 2.6 V

ton ⎯ 2.0 2.9

tc (on) ⎯ 0.4 ⎯

trr ⎯ 0.2 ⎯

toff ⎯ 1.3 2.3

Switching time

tc (off)

VCC = 300 V, IC = 200 A

VD = 15 V, VIN = 3 V ↔ 0 V

Tj = 25°C, Inductive load

(Note 1)

⎯ 0.2 ⎯

µs

Note 1: Switching time test circuit & timing chart

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2. Control stage (Tj = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

High side ID (H) ⎯ 13 17

Control circuit current Low side ID ( L) VD = 15 V ⎯ 39 51 mA

Input on signal voltage VIN (on) 1.4 1.6 1.8

Input off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V

Protection IFO (on) ⎯ 10 12

Fault output current Normal IFO (off) VD = 15 V ⎯ ⎯ 0.1

mA

Over current protection

trip level Inverter OC VD = 15 V, Tj

<

=

125°C 320

⎯ ⎯ A

Short circuit protection trip

level Inverter SC VD = 15 V, Tj

<

=

125°C 320 ⎯ ⎯ A

Over current cut-off time toff (OC) V

D = 15 V ⎯ 5 ⎯ µs

Trip level OT 110 118 125

Over temperature

protection Reset level OTr Case temperature ⎯ 98 ⎯ °C

Trip level UV 11.0 12. 0 12.5

Control supply under

voltage protection Reset level UVr ⎯ 12.0 12.5 13.0 V

Fault output pulse width tFO V

D = 15 V 1 2 3 ms

3. Thermal resistance (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

IGBT ⎯ ⎯ 0.125

Junction to case thermal resistance Rth (j-c) FRD ⎯ ⎯ 0.195 °C/W

Case to fin thermal resistance Rth (c-f) Compound is applied ⎯ 0.013 ⎯ °C/W

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Switching Time Test Circuit

Timing Chart

PG

TLP559 (IGM)

15

V

0.1 µF

47 µF

15

k

Ω

Intelligent power module

VD

IN

GND

OUT

VS

GND

U (V, W)

P

VCC

15

V

0.1 µF

47 µF

15

k

Ω

VD

IN

GND

OUT

VS

GND

IF =

16mA

N

Input pulse

VIN Wa vefor m

IC Wa vefo r m

VCE Wa v e f orm

2.5 V 1.6 V

15 V

10% 10%

t

o

ff t

c

(o

ff

)

10% 10%

t

o

nt

c

(o

n

)

0

90% Irr

trr

Irr 20% Irr

90%

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4. Recommended conditions for application

Characteristics Symbol Test Condition Min Typ. Max Unit

Supply voltage VCC P-N Power terminal ⎯ 300 400 V

Control supply voltage VD V

D-GND Signal terminal 13.5 15 16.5 V

Carrier frequency fc PWM Control ⎯ ⎯ 20 kHz

Dead time (Note 2) tdead Switching time test circuit

(See page.6) 4 ⎯ ⎯ µs

Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When

specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead

ti me giv en ab ove.

Dead Time Timing Chart

tdead

15

V

VIN Wa vefor m

0

15

V

0

tdead

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Forward current IF (A)

Switching time (µs)

Coll ector-emitter vol t ag e VCE (V)

IC – VCE

Collector c urre nt IC (A)

Collector-emitter voltage VCE (V)

IC – VCE

Collector c urre nt IC (A)

Collector current IC (A)

Switching time – IC

Switching time (µs)

Collector current IC (A)

Switching time – IC

Forward voltage VF (V)

IF – VF

Forward current IF (A)

trr, Irr – IF

Peak reverse recovery current Irr (A)

Reverse recovery time trr (×10 ns)

00 1 2 3 4

100

200

300

400

Common emitter

Tj = 25°C

VD = 17 V

15 V

13 V

00 1 2 3 4

100

200

300

400

Common emitter

Tj = 125°C

VD = 17 V

15 V

13 V

0.010 50 100 150 200 250

0.1

1

10

Tj = 25°C

VCC = 300 V

VD = 15 V

L-LOAD

ton

toff

tc

(

on

)

tc

(

off

)

0.010 50 100 150 200 250

0.1

1

10

Tj = 125°C

VCC = 300 V

VD = 15 V

L-LOAD

ton

toff

tc

(

on

)

tc

(

off

)

10

100

50 100 150 200 250

Common cathode

: Tj = 25°C

: Tj = 125°C

Irr

trr

00 1 2 3 4

50

100

150

200

250

400

Common cathode

: Tj = 25°C

: Tj = 125°C

300

350

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Transient thermal resistance

Rth (t) (°C/W)

Collect or cur re nt IC (A)

Case temperature Tc (°C)

OC – Tc

Over current protection trip level

OC (A)

Carrier frequency fc (kHz)

ID (H ) – fc

High side control circuit current ID (H) (mA)

Carrier frequency fc (kHz)

ID (L) – fc

Low side control circuit current ID (L) (mA)

Collector-emitter voltage VCE (V)

Reverse bias SOA

Pulse width tw (s)

Rth (t) – tw Inverter stage

00 25 50 75 100 125 150

100

200

300

400

500

600

VD = 15 V

00 5 10 15 20 25

10

20

30

40

50

VD = 15 V

Tj = 25°C

00 5 10 15 20 25

20

40

60

80

100

120

VD = 15 V

Tj = 25°C 00 200 400 600

80

160

240

320

400

VD = 15 V

Tj

<

=

125°C

OC

0.001

0.001 0.01 0.1 1 10

0.01

0.1

1

Diode

Tc = 25°C

Transistor

100 300 500 700

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Turn on loss − IC

Turn off loss − IC

Collector current IC (A)

Turn off loss Eoff (mJ)

Turn on loss Eon (mJ)

0.010 50 150 250

0.1

1

10

100

VCC = 300 V

VD = 15 V

L-LOAD

: Tj = 25°C

: Tj = 125°C

100 200 0.01

0.1

1

10

100

VCC = 300 V

VD = 15 V

L-LOAD

: Tj = 25°C

: Tj = 125°C

0 50 150 250 100 200