2011-07-26
1
BGA420
in SIEGET 25-Technologie
Si-MMIC-Amplifie
r
1
2
3
4
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
EHA07385
D
V
4
2
1
IN
OUT
3
GND
Circuit Diagram
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BGA420 BLs 1, IN 2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter Symbol Value Unit
Device current ID15 mA
Device voltage VD6 V
Total power dissipation
TS = 110 °C
Ptot 90 mW
RF input power PRFin 0 dBm
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤ 410 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2011-07-26
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BGA420
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics VD = 3 V, Zo = 50 Ω
Device current ID5.4 6.7 8 mA
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
|S21|2
17
15
11
19
17
13
-
-
-
dB
Reverse isolation
f = 1.8 GHz
S12 25 28 -
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
NF
-
-
-
1.9
2.2
2.3
2.3
2.6
2.7
Intercept point at the output
f = 1 GHz
IP3out 10 13 - dBm
1dB compression point
f = 1 GHz
P-1dB -6 -2.5 -
Return loss input
f = 1.8 GHz
RLin 8 11 - dB
Return loss output
f = 1.8 GHz
RLout 12 16 -
Typical biasing configuration
EHA07386
100 pF
RF IN
100 pF
GND
RF OUT
10 nF100 pF
+
3
12
4
D
V
BGA 420
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
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BGA420
Typical S-Parameters at TA = 25 °C
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
VD = 3 V, Zo = 50 Ω
0.1
0.5
0.8
1
1.5
1.8
1.9
2
2.4
3
0.5686
0.5066
0.4404
0.3904
0.2841
0.2343
0.2136
0.2062
0.1688
0.1558
-8.5
-19.2
-28.7
-34.6
-50.5
-60.6
-64.1
-68.4
-89.7
-104.9
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
102
99.7
91.7
85.3
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
-18.2
-21.5
-22.2
-48
-147.5
Spice-model BGA 420
EHA07387
3
RR1
P1
CP2
C
1
C
R2
P3
CC
P4
11
13
14
12
including parasitics
OUT
BGA 420-chip
IN
GND
+V
T1
T1 T501
R114.5kΩ
R2140Ω
R32.4kΩ
C12.3pF
CP1 0.2pF
CP2 0.2pF
CP3 0.6pF
CP4 0.1pF
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BGA420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
BF = 83.23 -
IKF = 0.16493 A
BR = 10.526 -
IKR = 0.25052 A
RB = 15 Ω
RE = 1.9289
VJE = 0.70367 V
XTF = 0.3641 -
PTF = 0 deg
MJC = 0.48652 -
CJS = 0fF
XTB = 0-
FC = 0.99469 -
NF = 1.0405 -
ISE = 15.761 fA
NR = 0.96647 -
ISC = 0.037223 fA
IRB = 0.21215 A
RC = 0.12691 Ω
MJE = 0.37747 -
VTF = 0.19762 V
CJC = 96.941 fF
XCJC = 0.08161 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 0.21024 fA
VAF = 39.251 V
NE = 1.7763 -
VAR = 34.368 V
NC = 1.3152 -
RBM = 1.3491 Ω
CJE = 3.7265 fF
TF = 4.5899 ps
ITF = 1.3364 mA
VJC = 0.99532 V
TR = 1.4935 ns
MJS = 0-
XTI = 3-
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS = 20 Ω
IS = 2 fA N = 1.02 -
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
LBI = 0.36 nH
LBO = 0.4 nH
LEI = 0.3 nH
LEO = 0.15 nH
LCI = 0.36 nH
LCO = 0.4 nH
CBE = 95 fF
CCB = 6 fF
CCE = 132 fF
C1 =28 fF
C2 =88 fF
C3 = 8 fF
L1 = 0.6 nH
L
2
= 0.4 nH
EHA07388
L
BI
1
C
BE
C
BO
LOUT
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
C’-E’-
IN
Diode
C
2
2
L
L
1
GND
+V
12
13
14
11
BGA 420
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
2011-07-26
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BGA420
Insertion power gain |S21|2 = f (f)
VD, ID = parameter
10 -1 10 0 10 1
GHz
f
0
5
10
15
dB
25
|S21|2
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
Insertion power gain |S21|2 = f (f)
VD = 3 V
TA = parameter
10 -1 10 0 10 1
GHz
f
0
2
4
6
8
10
12
14
16
18
dB
22
|S21|2
TA=-20°C
TA=+25°C
TA=+75°C
Noise figure NF = f (f)
VD = 3V
TA = parameter
10 -1 10 0 10 1
GHz
f
0
0.5
1
1.5
2
2.5
dB
3.5
NF
TA=+75°C
TA=+25°C
TA=-20°C
Noise figure NF = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
f
0
1
2
3
dB
5
NF
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
2011-07-26
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BGA420
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
f
0
2
4
6
8
10
12
14
16
dBm
20
IP3out
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3.4mA
Intercept point at the output
IP3out = f (f), VD = 3V
TA = parameter
10 -1 10 0 10 1
GHz
f
0
1
2
3
4
5
6
7
8
9
10
dBm
12
IP3out
TA=-20°C
TA=+25°C
TA=75°C
2011-07-26
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BGA420
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2011-07-26
8
BGA420
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
