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IRAMX30TP60A
Series
30A, 600V
with Open Emitter Pins
Description
International Rectifier's IRAMX30TP60A is a 30A, 600V Integrated Power Hybrid IC with Open Emitter pins
for advanced Appliance Motor Drives applications such as air conditioning systems and compressor drivers
as well as in light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark
3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in high
precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using
a single in line package (SIP2) with full transfer mold structure and CTI>600 minimizes PCB space and
resolves isolation problems to heatsink.
Features
x Integrated gate drivers and bootstrap diodes
x Temperature monitor
x Protection shutdown pin
x Low VCE (on) Trench IGBT technology
x Undervoltage lockout for all channels
x Matched propagation delay for all channels
x Schmitt-triggered input logic
x Cross-conduction prevention logic
x Motor Power range 1~2kW / 85~253 Vac
x Isolation 2000VRMS min and CTI> 600
RoHS Compliant
Recognized by UL (File Number: E252584)
Absolute Maximum Ratings
VCES / VRRM IGBT/ FW Diode Blocking Voltage 600
V+Positive Bus Input Voltage 450
Io @ TC=25°C RMS Phase Current at FPWM=6kHz (Note 1) 30
Io @ TC=100°C RMS Phase Current at FPWM=6kHz (Note 1) 15
Ipk Maximum Peak Phase Current (Note 2) 45
FpMaximum PWM Carrier Frequency 20 kHz
PdMaximum Power dissipation per IGBT @ TC =25°C 41 W
VISO Isolation Voltage (1min) 2000 VRMS
TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature +150
TCOperating Case Temperature Range -20 to +100
TSTG Storage Temperature Range -40 to +125
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm
Note 1: Sinusoidal Modulation at V+=400V, VCC=15V, TJ=150°C, MI=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, VCC=15V, TC=25°C, FPWM=6kHz.
A
°C
V
Integrated Power Hybrid IC for
App
liance Motor Drive A
pp
lications
IRAMX30TP60A
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Internal Electrical Schematic – IRAMX30TP60A
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
VRU (12)
VRW (14)
VRV (13)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
THERMISTOR
R
3
VDD (22)
VSS (23)
R
1
R
2
C
Rg1 Rg3 Rg5
Driver IC
R
T
LO1 16
LO3 14
LO2 15
Rg2
Rg4
Rg6
T/I
TRIP
(21)
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
V (10)+
IRAMX30TP60A
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Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units Conditions
I
BDF
Bootstrap Diode Peak Forward
Current --- 1.0 A t
P
=10ms,
T
J
=150°C, T
C
=100°C
P
BR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 15.0 W t
P
=100μs, T
C
=100°C
ESR series
V
S1,2,3
High side floating supply offset
voltage V
B1,2,3
- 20 V
B1,2,3
+0.3 V
V
B1,2,3
High side floating supply voltage -0.3 600 V
V
CC
Low Side and logic fixed supply
voltage -0.3 20 V
V
IN
Input voltage LIN, HIN, T/Itrip -0.3 7 V
V
(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V V
IN
=5V, I
C
=250μA
Ʃ9
(BR)CES
Ʃ7 Temperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C V
IN
=5V, I
C
=1mA
(
25°C - 150°C
)
--- 1.5 2 IC=12.5A, T
J
=25°C
--- 1.7 --- IC=12.5A, T
J
=150°C
--- 10 150 V
IN
=5V, V
+
=600V
--- 500 --- V
IN
=5V, V
+
=600V, T
J
=150°C
-- 1.65 2.2 IF=12.5A
--- 1.55 --- IF=12.5A, T
J
=150°C
--- 1.2 1.7 I
F
=1A
--- 1.0 --- I
F
=1A, T
J
=125°C
R
BR
Bootstrap Resistor Value --- 22 --- ƻT
J
=25°C
Ʃ5
BR
/R
BR
Bootstrap Resistor Tolerance --- --- ±5 % T
J
=25°C
V
BDFM
Bootstrap Diode Forward Voltage
Drop V
V
CE(ON)
Collector-to-Emitter Saturation
Voltage V
I
CES
Nj$
V
FM
Diode Forward Voltage Drop V
Zero Gate Voltage Collector
Current
IRAMX30TP60A
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Inverter Section Switching Characteristics
Symbol Parameter Min Typ Max Units Conditions
E
ON
Turn-On Switching Loss --- 585 ---
E
OFF
Turn-Off Switching Loss --- 185 ---
E
TOT
Total Switching Loss --- 770 ---
E
REC
Diode Reverse Recovery energy --- 20 ---
t
RR
Diode Reverse Recovery time --- 130 --- ns
E
ON
Turn-on Switching Loss --- 780 ---
E
OFF
Turn-off Switching Loss --- 310 ---
E
TOT
Total Switching Loss --- 1090 ---
E
REC
Diode Reverse Recovery energy --- 25 ---
t
RR
Diode Reverse Recovery time --- 125 --- ns
Q
G
Turn-On IGBT Gate Charge --- 50 75 nC I
C
=24A, V
+
=400V, V
GE
=15V
RBSOA Reverse Bias Safe Operating Area
T
J
=150°C, I
C
=12.5A, V
P
=600V
V
+
= 450V,
V
CC
=+15V to 0V See CT3
SCSOA Short Circuit Safe Operating Area 5 --- --- μsT
J
=25°C, V
+
= 400V,
V
GE
=+15V to 0V
FULL SQUARE
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified.
μJ
I
C
=12.5A, V
+
=400V
V
CC
=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
μJ
I
C
=12.5A, V
+
=400V
V
CC
=15V, L=1.2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
VB1,2,3 High side floating supply voltage VS+12.5 VS+15 VS+17.5 V
VS1,2,3 High side floating supply offset voltage Note 4 --- 450 V
VCC Low side and logic fixed supply voltage 13.5 15 16.5 V
VT/ITRIP T/ITRIP input voltage VSS --- VSS+5 V
VIN Logic input voltage LIN, HIN VSS --- VSS+5 V
HIN High side PWM pulse width 1 --- --- μs
Deadtime External dead time between HIN and LIN 1 --- --- μs
Note 3: For more details, see IR21365 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased
at 15V differential
(
Note 3
)
IRAMX30TP60A
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Static Electrical Characteristics Driver Function
Symbol Definition Min Typ Max Units
V
IN,th+ Positive going input threshold for LIN, HIN 3.0 --- --- V
VIN,th- Negative going input threshold for LIN, HIN --- --- 0.8 V
VCCUV+, VBSUV+ VCC/VBS supply undervoltage, Positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC/VBS supply undervoltage, Negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
IQBS Quiescent VBS supply current --- --- 120 μA
IQCC Quiescent VCC supply current --- --- 2.3 mA
ILK Offset Supply Leakage Current --- --- 50 μA
IIN+ Input bias current (OUT=LO) --- 100 220 μA
IIN- Input bias current (OUT=HI) -1 200 300 μA
V(T/ITRIP)I
TRIP threshold Voltage 3.85 4.3 4.75 V
V(T/ITrip, HYS) ITRIP Input Hysteresis --- 0.15 --- V
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-on
delay time (see fig.11) --- 650 --- ns
T
OFF
Input to Output propagation turn-off
delay time (see fig. 11) --- 700 --- ns
T
FILIN
Input filter time (HIN,LIN) --- 200 --- μsV
IN
=0 or V
IN
=5V
T
BLT-ITRIP
I
TRIP
Blanking Time --- 150 --- ns V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
T
ITRIP
I
TRIP
to six switch turn-off
propagation delay (see fig. 2) --- --- 1.75 μsI
C
=12.5A, V
+
=300V
D
T
Internal Dead Time injected by
driver 220 290 360 ns V
IN
=0 or V
IN
=5V
M
T
Matching Propagation Delay Time
(On & Off) all channels --- 40 75 ns External dead time> 400ns
--- 7.7 --- T
C
= 25°C
--- 6.7 --- T
C
= 100°C
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
T
FLT-CLR
Post I
TRIP
to six switch turn-off clear
time (see fig. 2) ms
I
C
=12.5A, V
+
=300V
IRAMX30TP60A
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Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 2.4 3.0
Rth(J-C) Thermal resistance, per Diode --- 3.7 5.0
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CTI Comparative Tracking Index 600 --- --- V
BKCurve Curvature of module backside 0 --- --- NjP Convex only
°C/W
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 Nƻ TC = 25°C
R125 Resistance 2.25 2.52 2.80 Nƻ TC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C TC = 25°C
RTResistance --- 12 --- Nƻ TC=25°C
Ʃ5T/RTResistor Tolerance --- --- ±1 % TC=25°C
Input-Output Logic Level Table
I
TRIP HIN1,2,3 LIN1,2,3 U,V,W
001V+
0100
011Off
000Off
1XXOff
Ho
Lo
U,V,W
IC
Driver
V
+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
IRAMX30TP60A
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T/I
TRIP
U,V,W
LIN1,2,3
HIN1,2,3
Figure1. Input/Output Timing Diagram
T/I
TRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TT/ITRIP
50%
Figure 2. T/ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
IRAMX30TP60A
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Module Pin-Out Description
Pin Name Description
1V
B3
High Side Floating Supply Voltage 3
2U, V
S3
Output 3 - High Side Floating Supply Offset Voltage
3NAnone
4V
B2
High Side Floating Supply voltage 2
5V,V
S2
Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7V
B1
High Side Floating Supply voltage 1
8W,V
S1
Output 1 - High Side Floating Supply Offset Voltage
9NAnone
10 V
+
Positive Bus Input Voltage
11 NA none
12 L
E1
Low Side Emitter Connection - Phase 1
13 L
E2
Low Side Emitter Connection - Phase 2
14 L
E3
Low Side Emitter Connection - Phase 3
15 H
IN1
Logic Input High Side Gate Driver - Phase 1
16 H
NI2
Logic Input High Side Gate Driver - Phase 2
17 H
IN3
Logic Input High Side Gate Driver - Phase 3
18 L
IN1
Logic Input Low Side Gate Driver - Phase 1
19 L
IN2
Logic Input Low Side Gate Driver - Phase 2
20 L
IN3
Logic Input Low Side Gate Driver - Phase 3
21 T/I
TRIP
Temperature Monitor and Shut-down Pin
22 V
CC
+15V Main Supply
23 V
SS
Negative Main Supply
1
23
IRAMX30TP60A
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Typical Application Connection IRAMX30TP60A
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
W
V
U
CONTROLLER
V+
DC BUS
CAPACITORS
PHASE LEG
CURRENT
SENSE
O/C
SENSE
(ACTIVE LOW)
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
Cb V
B3
V
B2
V
B1
V
S3
V
S3
V
S1
PGND
V
cc
(15 V)
I
TRIP
V
SS
L
E1
L
E2
L
E3
H
IN1
H
IN2
H
IN3
L
IN1
L
IN2
L
IN3
TEMP
SENSE
O/C
SENSE
(ACTIVE LOW)
DGND
23
IRAMX30TP60A
1
P 9DF00
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DT04-4, application note AN-1044 or Figure 10. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings
Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
IRAMX30TP60A
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0
2
4
6
8
10
12
14
16
18
20
22
0 2 4 6 8 10 12 14 16 18 20
Maxim um Output Phase RMS Current - A
PWM Sw itching Fr e quency - k Hz
T
C
= 80ºC
T
C
= 90ºC
T
C
= 100ºC
Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
0
2
4
6
8
10
12
14
16
18
1 10 100
Maxim um Output Phase RMS Current - A
Modulation Frequency - Hz
F
PWM
= 6kHz
F
PWM
= 10kHz
F
PWM
= 16kHz
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
IRAMX30TP60A
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0
50
100
150
200
250
300
02468101214161820
Total Pow er Loss- W
PWM Sw itching Fr e quency - k Hz
I
OUT
= 18A
I
OUT
= 15A
I
OUT
= 12A
Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16 18 20
Total Pow er Loss - W
Output Phase Current - ARMS
FPWM = 16kHz
FPWM = 10kHz
FPWM = 6kHz
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
IRAMX30TP60A
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40
60
80
100
120
140
160
0 2 4 6 8 10 12 14 16 18 20
Max Allow able Case Temperature - ºC
Output Phase Current - ARMS
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
103
90
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105 110 115
IGBT Junction Temperature - °C
Internal Thermistor Temperature Equivalent Read Out - °C
T
J avg
= 1.33 x T
Therm
+ 14
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=6Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
IRAMX30TP60A
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Pin Read-Out Voltage - V
Thermistor Temperature - °C
Max
Avg
Min
Figure 10. Thermistor Readout vs. Temperature (7.5kohm REXT pull-down resistor) and
Normal Thermistor Resistance values vs. Temperature Table.
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
0 5 10 15 20
Recommended Bootstrap Capacitor - ȝF
PWM Fr e que ncy - k Hz

ȝ
F

ȝ
F
ȝF

ȝ
F
15
ȝ
F
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
IRAMX30TP60A
14 www.irf.com
Figure 11. Switching Parameter Definitions
VCE IC
HIN/LIN
ON tr
50%
H
IN
/L
IN
90% I
C
10% I
C
50%
H
IN
/L
IN
V
CE
I
C
H
IN
/L
IN
T
OFF
t
f
90% I
C
10% I
C
10%
V
CE
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
V
CE
I
F
H
IN
/L
IN
t
rr
I
rr
Figure 11c. Diode Reverse Recovery.
IRAMX30TP60A
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Ho
Lo
U,V,W
IC
Driver
V
+
Lin1,2,3
5V
Hin1,2,3
I
N
I
O
Figure CT1. Switching Loss Circuit
Ho
Lo
U,V,W
IC
Driver
V
+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
V
CC
I
o
I
N
I
O
Figure CT2. S.C.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
V
+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
V
CC
Io
I
N
I
O
Figure CT3. R.B.SOA Circuit
IRAMX30TP60A
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Package Outline IRAMX30TP60A
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
㻝㻞㻟
䐠
䐟
䐡
IRAMX30TP60A
P 4DB00
missing pin : 3,6,9,11
note2
note4
note3
note5
Dimensions in mm
For mounting instruction see AN-1049
IRAMX30TP60A
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Package Outline IRAMX30TP60A-2
note1: Unit Tolerance is +0.5mm,
䚷䚷䚷 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䚷䚷䚷䚷 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
missing pin : 3,6,9,11
㻝㻞㻟
䐠
䐡
䐟
IRAMX30TP60A-2
㻼㻌㻌㻠㻰㻮㻜㻜
note2
note4
note3
note5
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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2013-07-29