EMP111 - Excelics Semiconductor, Inc.

EMP111

UPDATED 10/05/2004 7.0 – 9.0 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2004

Dimension: 1130um X 2250um

Thickness: 85um + 13um

FEATURES

• 7.0 – 9.0 GHz Operating Frequency Range

• 27.0dBm Output Power at 1dB

Compression

• 18.0 dB Typical Small Signal Gain

• -40dBc OIMD3 @Each Tone Pout 17 dBm

APPLICATIONS

• Point-to-point and point-to-multipoint radio

• Military Radar Systems

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS

(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified)

SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS

F Operating Frequency Range 7.0 9.0 GHz

P1dB Output Power at 1dB Gain Compression 26.0 27.0 dBm

Gss Small Signal Gain 15.0 18.0 dB

OIMD3

Output 3rd Order Intermodulation Distortion

@∆f=10MHz, Each Tone Pout 17dBm,

7V, 60%+10%Idss

-41 -38 dBc

Input RL Input Return Loss -12 -8 dB

Output RL Output Return Loss -6 dB

Idss Saturated Drain Current Vds =3V, VGS =0V 475 620 750 mA

Vds Drain to Source Voltage 7 8 V

NF Noise Figure @8GHz 8 dB

Rth Thermal Resistance (Au-Sn Eutectic Attach) 22 oC/W

Tb Operating Base Plate Temperature - 35 + 85 ºC

MAXIMUM RATINGS AT 25°C1,2

SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS

Vds Drain to Source Voltage 12V 8 V

VGS Gate to Source Voltage -8V - 4 V

Ids Drain Current Idss 650mA

IGSF Forward Gate Current 57mA 9.5 mA

PIN Input Power 24dBm @ 3dB compression

TCH Channel Temperature 175°C 150°C

TSTG Storage Temperature -65/175°C -65/150°C

PT Total Power Dissipation 6.2W 5.2W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH

EMP111

UPDATED 10/05/2004 7.0 – 9.0 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2004

Typical Performance:

1. Small Signal Performance (@7V, 400mA)

6 7 8 9 10 11

Frequency (GHz)

EMP111 Small Signal Performanc e

-25

-20

-15

-10

-5

DB(|S[2,1]|) *

DB(|S[1,1]|) *

DB(|S[2,2]|) *

2. OIMD VS Pout @7V, 400mA (@8GHz, ∆f=10MHz) 3. P-1 VS Vds @Idsq=400mA

EMP111 OIMD (dBc) vs. Pout(dBm)

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0 5 10 15 20 25

Each Tone Pout (dBm)

OI MD (dBc)

OIMD3

EMP111 P1dB(dBm) vs. Vds

678910

Frequency (GHz)

dBm

Vds=5V

Vds=7V

APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)

Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper

tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20

minutes.

Die attach should be done with Gold/Tin (80 /20) eutectic alloy in inert ambient gas. The backside is used as heatsinking,

DC, and RF contacts.

All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental

discharge through a die.

EMP111

UPDATED 10/05/2004 7.0 – 9.0 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2004

Assembly Drawing

The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line

and separate the wires to minimize the mutual inductance.

CHIP OUTLINE

Chip Size 1130 x 2250 microns

Chip Thickness: 85 ± 13 microns

PAD Dimensions: 100 x 100 microns

All Dimensions in Microns