AO4498
30V N-Channel MOSFET
General Description Product Summary
V
DS
(V) = 30V
ID = 18A (VGS = 10V)
RDS(ON) < 5.5mΩ(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
31 40
59 75
RθJL 16 24
Avalanche Current C42 A
Repetitive avalanche energy L=0.1mH C88 mJ
Maximum Junction-to-Lead Steady-State °C/W
Steady-State °C/W
Maximum Junction-to-Ambient
A D
Power Dissipation BPDW
3.1
A
ID18
14
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
The AO4498 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
V
V±20Gate-Source Voltage
Drain-Source Voltage 30
t ≤ 10s °C/W
Parameter
RθJA
Units
Maximum Junction-to-Ambient
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
RDS(ON) < 7.5mΩ
TC=25°C 2
TC=70°C
140Pulsed Drain Current
C
Continuous Drain
Current TC=25°C
TC=70°C
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4498
Symbol Min Typ Max Units
BV
DSS
30 36.5 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.3 1.8 2.5 V
I
D(ON)
140 A
4.6 5.5
T
J
=125°C 6.6 8
6 7.5 mΩ
g
FS
53 S
V
SD
0.7 1 V
I
S
4 A
C
iss
1910 2300 pF
C
oss
316 pF
C
rss
227 pF
R
g
0.7 1.4 2.1 Ω
Q
g
(10V) 37 44.5 nC
Q
g
(4.5V) 18 nC
Q
gs
4.8 nC
Q
gd
11 nC
t
D(on)
8.1 ns
t
r
8.6 ns
t
D(off)
29 ns
t
f
8 ns
t
rr
14 17 ns
Q
rr
40 nC
Rev 1 : Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=18A
Reverse Transfer Capacitance
I
F
=18A, dI/dt=500A/µs
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=18A
V
GS
=4.5V, I
D
=16A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=18A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=18A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and l ead to ambi ent.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
10
20
30
40
50
60
70
80
012345
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
2
4
6
8
10
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=16A
V
GS
=10V
I
D
=18A
0
2
4
6
8
10
12
14
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°
C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=18A
25°C
125°C
0
20
40
60
80
100
120
140
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=3.5V
4V
5V
6V
10V 4.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
V
DS
=15V
I
D
=18A
0.0
0.1
1.0
10.0
100.0
1000.0
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power (W)
T
J(Max)
=150°C
T
A
=25°C
100ms
10ms
0
20
40
60
80
100
120
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
D
(A), Peak Avalanche Current
T
A
=25°C
T
A
=150°
T
A
=100°
T
A
=125°
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Q
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=40°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4498
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Alpha & Omega Semiconductor, Ltd. www.aosmd.com