2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030—Rev. E, 04-Jun-01 www.vishay.com
9-1
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)ID(off) Typ (pA) tON Max (ns)
2N5114 5 to 10 75 –10 16
2N5115 3 to 6 100 –10 30
2N5116 1 to 4 150 –10 42
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 2N5114 <75 W
DFast Switching—tON: 16 ns
DHigh Off-Isolation—ID(off): –10 pA
DLow Capacitance: 6 pF
DLow Insertion Loss
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response
DEliminates Additional Buffering
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The 2N5114JAN/JANTX/JANTXV series consists of
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 3 mW/_C above 25_C
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
www.vishay.com
9-2 Document Number: 70261
S-04030—Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5114 2N5115 2N5116
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30 30 V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 5 10 3 6 1 4 V
VDS = –18 V –30 –90
Saturation Drain CurrentbIDSS VGS = 0 V VDS = –15 V –15 –60 –5–25 mA
VGS = 20 V, VDS = 0 V 5 500 500 500 pA
Gate Reverse Current IGSS TA = 150_C0.01 1 1 1 mA
Gate Operating CurrentcIGVDG = –15 V, ID = –1 mA –5
VGS = 12 V –10 –500
VDS = –15 V VGS = 7 V –10 –500 pA
DS VGS = 5 V –10 –500
Drain Cutoff Current ID(off) VGS = 12 V –0.02 –1
VDS = –15 V
T = 150_CVGS = 7 V –0.02 –1mA
TA = 150
_
CVGS = 5 V –0.02 –1
m
ID = –15 mA –1.0 –1.3
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = –7 mA –0.7 –0.8 V
DS(on) GS ID = –3 mA –0.5 –0.6
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = –1 mA 75 100 150 W
Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 –1–1–1 V
Dynamic
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 75 100 175 W
Common-Source
Input Capacitance Ciss VDS = –15 V, VGS = 0 V
f = 1 MHz 20 25 25 27
VGS = 12 V 5 7 pF
Common-Source
Reverse Transfer Capacitance Crss VDS = 0 V
f = 1 MHz VGS = 7 V 6 7 pF
Reverse Transfer Capacitance rss f = 1 MHz VGS = 5 V 6 7
Switching
td(on) 6 10 25
T urn-On Time tr10 20 35
td(off) See Switching Circuit 6 8 20 ns
Turn-Off Time tf15 30 60
Notes
a. Typical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70261
S-04030—Rev. E, 04-Jun-01 www.vishay.com
9-3
SWITCHING TIME TEST CIRCUIT
2N5114 2N5115 2N5116
VDD –10 V –6 V –6 V
VGG 20 V 12 V 8 V
RL*430 W910 W2000 W
RG*100 W220 W390 W
ID(on) –15 mA –7 mA –3 mA
VGS(H) 0 V 0 V 0 V
VGS(L) –11 V –7 V –5 V
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
7.5 kW
51 W
1.2 kW
51 W
51 W
1.2 kW
0.1 mF
Sampling
Scope
VGG –VDD
RG
VGS(H)
VGS(L)
RL
