AP4419GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic -35V RDS(ON) 38m ID G RoHS Compliant BVDSS -25A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4419GJ) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -35 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -25 A ID@TC=100 Continuous Drain Current, VGS @ 10V -16 A 1 IDM Pulsed Drain Current -70 A PD@TC=25 Total Power Dissipation 34.7 W Linear Derating Factor 0.28 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 3.6 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data and specifications subject to change without notice 200428051-1/4 AP4419GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -35 - - V - -0.02 - V/ VGS=-10V, ID=-16A - - 38 m VGS=-4.5V, ID=-12A - - 68 m Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-16A - 14 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-16A - 12 20 nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) Static Drain-Source On-Resistance o IGSS 2 VGS=0V, ID=-250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC VDS=-15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-16A - 40 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 46 - ns tf Fall Time RD=0.9 - 56 - ns Ciss Input Capacitance VGS=0V - 700 1120 pF Coss Output Capacitance VDS=-25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Rg Gate Resistance f=1.0MHz - 10 15 Min. Typ. IS=-16A, VGS=0V - - -1.3 V IS=-16A, VGS=0V, - 27 - ns dI/dt=-100A/s - 17 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP4419GH/J 60 60 -10V -7.0V -ID , Drain Current (A) T C = 25 C -10V -7.0V T C = 150 o C -ID , Drain Current (A) o 40 -5.0V -4.5V 20 40 -5.0V -4.5V 20 V G = -3.0 V V G = -3.0 V 0 0 0 2 4 6 8 0 -V DS , Drain-to-Source Voltage (V) 2 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.7 110 I D =-16A V G =-10V I D = -12 A T C =25 Normalized RDS(ON) 1.4 RDS(ON) (m ) 80 50 1.1 0.8 0.5 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 12 Normalized -VGS(th) (V) 1.6 8 o o -IS(A) T j =150 C T j =25 C 4 1.2 0.8 0.4 0 0 0.4 0.8 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4419GH/J f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) V DS =-30V I D =-16A C iss C (pF) 9 6 C oss 3 C rss 100 0 0 4 8 12 16 1 20 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10 1ms o 10ms 100ms 1s DC T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 VG V DS =-5V -ID , Drain Current (A) 30 QG o o T j =25 C -4.5V T j =150 C QGS 20 QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4