DATA SH EET
Product specification
Supersedes data of 1997 Apr 09 1999 Apr 23
DISCRETE SEMICONDUCTORS
2N5550; 2N5551
NPN high-voltage transistors
b
ook, halfpage
M3D186
1999 Apr 23 2
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
FEATURES
Low current (max. 300 mA)
High voltage (max. 160 V).
APPLICATIONS
Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
2N5550 160 V
2N5551 180 V
VCEO collector-emitter voltage open base
2N5550 140 V
2N5551 160 V
VEBO emitter-base voltage open collector 6V
I
Ccollector current (DC) 300 mA
ICM peak collector current 600 mA
IBM peak base current 100 mA
Ptot total power dissipation Tamb 25 °C630 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
2N5550 IE= 0; VCB = 100 V 100 nA
IE= 0; VCB = 100 V; Tamb = 100 °C100 µA
collector cut-off current
2N5551 IE= 0; VCB = 120 V 50 nA
IE= 0; VCB = 120 V; Tamb = 100 °C50 µA
IEBO emitter cut-off current IC= 0; VEB =4V 50 nA
hFE DC current gain IC= 1 mA; VCE = 5 V; see Fig.2
2N5550 60
2N5551 80
DC current gain IC= 10 mA; VCE = 5 V; see Fig.2
2N5550 60 250
2N5551 80 250
DC current gain IC= 50 mA; VCE = 5 V; see Fig.2
2N5550 20
2N5551 30
VCEsat collector-emitter saturation voltage IC= 10 mA; IB=1mA 150 mV
collector-emitter saturation voltage IC= 50 mA; IB=5mA
2N5550 250 mV
2N5551 200 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB=1mA 1V
I
C
= 50 mA; IB=5mA 1V
C
ccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz 6pF
C
eemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz 30 pF
fTtransition frequency IC= 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2k;
f = 10 Hz to 15.7 kHz
2N5550 10 dB
2N5551 8dB
1999 Apr 23 4
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
120
160
40
80
MGD814
10111010
2103
hFE
IC mA
VCE = 5 V
1999 Apr 23 5
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
1999 Apr 23 6
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 23 7
Philips Semiconductors Product specification
NPN high-voltage transistors 2N5550; 2N5551
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05392