US1BFA - ON SEMICONDUCTOR - Product.Network

December, 2019 − Rev. 2

1Publication Order Number:

US1MFA/D

Super Fast Surface Mount

Rectifiers

US1AFA-US1MFA

Features

•Glass Passivated Chip Junction

•Low Power Loss, High Efficiency

•Fast Switching Reverse Recovery Time: 50~75 ns Maximum

•High Surge Capacity

•UL Flammability 94V−0 Classification

•MSL 1 per J−STD−020

•NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free and are RoHS Compliant

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SOD−123FL

CASE 425AB

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

H*L = Specific Device Code

* = A/B/D/F/G/J/K/M

&G = 1−Digit Weekly Date Code (Week)

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

&ZH*L&G

Cathode

Anode

US1AFA−US1MFA

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ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted)

Symbol Parameter

US1

AFA

US1

BFA

US1

DFA

US1

FFA

US1

GFA

US1

JFA

US1

KFA

US1

MFA Unit

VRRM Repetitive Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V

VRMS RMS Reverse Voltage 35 70 140 210 280 420 560 700 V

VRDC Blocking Voltage 50 100 200 300 400 600 800 1000 V

IF(AV) Average Forward Rectified Current 1 A

IFSM Peak Forward Surge Current: 8.3 ms Single Half

Sine−Wave Superimposed on Rated Load

30 A

TJOperating Junction Temperature Range −55 to +150 °C

TSTG Storage Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)

Symbol Parameter Value Unit

YJL Typical Thermal Resistance, Junction to Lead 21 °C/W

RθJA Typical Thermal Resistance, Junction to Ambient 153 °C/W

NOTE: Device mounted at minimum pad.

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)

Symbol Parameter Conditions US1

AFA

US1

BFA

US1

DFA

US1

FFA

US1

GFA

US1

JFA

US1

KFA

US1

MFA

Unit

VFMaximum Instantaneous Forward

Voltage (Note 1)

IF = 1 A 0.95 1.30 1.70 V

IRMaximum Reverse Current at

Rated VR

TJ = 25°C5mA

TJ = 125°C150

CJTypical Junction Capacitance VR = 4.0 V,

f = 1.0 MHz

20 15 pF

Trr Maximum Reverse Recovery

Time

IF = 0.5 A,

IR = 1 A,

Irr = 0.25 A

50 75 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse test with PW = 300 ms, 1% duty cycle.

ORDERING INFORMATION

Part Number Top Mark Package Shipping

†

US1AFA, NRVUS1AFA* HAL SOD−123FL

(Pb−Free / Halogen Free)

3,000 / Tape & Reel

US1BFA, NRVUS1BFA* HBL

US1DFA, NRVUS1DFA* HDL

US1FFA, NRVUS1FFA* HFL

US1GFA, NRVUS1GFA* HGL

US1JFA, NRVUS1JFA* HJL

US1KFA, NRVUS1KFA* HKL

US1MFA, NRVUS1MFA* HML

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

US1AFA−US1MFA

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Maximum Forward Current Derating

Voltage

Figure 2. Typical Reverse Characteristics

Figure 3. Maximum Non−Repetitive Forward Surge

Current

Figure 4. Typical Instantaneous Forward

Characteristics

Figure 5. Typical Junction Capacitance Figure 6. Reverse Recovery Time Characteristic

and Test Circuit Diagram

AVERAGE FORWARD CURRENT (A)

LEAD TEMPERATURE (oC)

INSTANTANEOUS REVERSE CURRENT

( A)

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

TJ=25

TJ=125

PEAK FORWARD SURGE CURRENT (A)

NUMBER OF CYCLES AT 60 Hz

8.3 ms Single Half Sine Wave

INSTANTANEOUS FORWARD

CURRENT (A)

FORWARD VOLTAGE (V)

US1AFA−US1DFA

US1GFA

US1JFA−US1MFA

JUNCTION CAPACITANCE (pF)

REVERSE VOLTAGE (V)

US1AFA−US1GFA

US1JFA−US1MFA

SOD−123FL

CASE 425AB

ISSUE O

DATE 31 AUG 2016

1.40

1.20

1.90 1.40

1.20

4.30

1.43

1.23

0.30

0.16

3.80

3.40

1.90

1.70

2.90

2.70

1.20

0.80

0.85

0.35 2.60

2.45 NOTES:

A. NO INDUSTRY STANDARD APPLIES TO THIS

PACKAGE.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

TOP VIEW

LAND PATTERN RECOMMENDATION

BOTTOM VIEW

FRONT VIEW

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98AON13722G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

SOD−123FL

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Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

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For additional information, please contact your local Sales Representative

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