1/3
Schottky Barrier Diode, 100mA, 30V Type
XBS013S15R-G
■PACKAGING INFORMATION
Ta=25℃
PRODUCT NAME DESCRIPTION
XBS013S15R SOD-523
XBS013S15R-G SOD-523 (Halogen & Antimony free)
Ta=25℃
LIMITS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 I
F=1mA - 0.31 - V
Forward Voltage VF2 I
F=100mA - 0.71 1 V
Reverse Current IR V
R=25V - - 2
μA
Inter-Terminal Capacity Ct VR=0V , f=1MHz - 6 - pF
Reverse Recovery Time*2 trr IF=IR=10mA , irr=1mA - 2 - ns
*2：trr measurement circuit
A
IF
IR
trr
t
irr
0
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM 30 V
Reverse Voltage (DC) VR 30 V
Forward Current (Average) IF(AV) 100 mA
Non Continuous
Forward Surge Current*1 IFSM 0.6 A
Junction Temperature Tj 125 ℃
S torage Temperature Range Tstg -55～+150 ℃
*1：Non continuous high amplitude 60Hz half –sine wave.
Forward Voltage : V
F
=0.71V (TYP.)
Forward Current : I
F(AV)
=100mA
Repetitive Peak Reverse Voltage: V
RM
=30V
Environmentally Friendly : EU RoHS Compliant, Pb Free
■
A
BSOLUTE MAXIMUM RATING
■APPLICATIONS
●Low Current Rectification
■MARKING RULE
■ELECTRICAL CHARACTERISTICS
■PRODUCT NAME
■FEATURES
Pulse Generatrix
Bias Device Under test
Oscillosco
p
e
①: 0 (Product Number)
②: Assembl
y
Lot Numbe
r
ETR1603-003
Cathode Bar
SOD-523
Unit : mm
* The “-G” suffix indicates that the products are Halogen and Anti mony free as well as being fully RoHS compl i ant.
* The device orientation is fixed in i ts embossed tape pocket.
2/3
XBS013S15R-G
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Te mperature
0.01
0.1
1
10
100
1000
0 50 100 150
Operating Temperature Ta (℃)
Reverse Current I
R
(uA)
VR=25V
15V
5V
(5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature
0
10
20
30
40
50
0102030
Reverse Voltage VR (V)
Inter-Terminal Capacity Ct (pF)
Ta=25℃
0
50
100
150
200
250
0 50 100 150
Operating Temperature Ta (℃)
Average Forward Current IF
AV
(mA)
0.1
1
10
100
00.2 0.4 0.6 0.8
Ta=125℃ -25℃
25℃ 75℃
Forward Current: IF (mA)
Forward Voltage: VF (V)
0.01
0.1
1
10
100
1000
010 20 30
Ta=125℃
25℃
75℃
0.0
0.2
0.4
0.6
0.8
-50 0 50 100 150
Operating Temperature: Ta (℃)
F (V)
IF=100mA
1mA
10mA
Forward Voltage : V
■TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Current: IR (μA)
Inter-Terminal Capacity: Ct (pF)
Average Forward Current: IFAV (mA)
Reverse Voltage: VR (V) Operating Temperature: Ta (℃)
Operating Temperature: Ta (℃)
Forward Voltage: VF (V)
Reverse Current: IR (μA)
Reverse Voltage: VR (V)
3/3
XBS013S15R-G
TOREX SEMICONDUCTOR LTD.
1 The product s and product specifications cont ained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2 We assume no responsibility for any infringement of patents, patent rights, or other
rights ari sin g from the use of any information and circuitry in this datasheet.
3 Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this data she et.
4 The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5 Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our re presentatives.
6 We assume no responsibility for damage or loss due to abnormal use.
7 All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
